碘化銫(CsI)單晶是一種優良的閃爍晶體，是一種高量子效應材料，有很高的發光效率，並且在發光波段沒有明顯的自吸收。此外對Χ射線和γ射線均有良好的分辨能力，具有將輻射線轉換為可見光的特性，再經由光電倍增管將光訊號轉換成電子訊號[1,2]。但這材料它具有易潮解的缺點，不但會降低它本身發光效率，更無法準確地量測其光學常數。本實驗主要是利用真空蒸鍍製造CsI薄膜，配合離子源輔助蒸鍍(ion-assisted deposition, IAD)，並嘗試在CsI薄膜上加鍍不同之高穿透材料(如:MgF2、SiO2)，解決它易潮解之缺點。接著將已克服潮解問題之CsI薄膜，利用橢圓偏振儀、X-ray 繞射儀以及原子力顯微鏡進行相關之光學量測及分析。

The single-crystal Cesium Iodide (CsI) is a scintillator that possesses high quantum efficiency, high luminous efficiency, good spectroscopic performance and no significant self- absorption of the scintillation light. CsI can convert radiation into visible light, which can be converted into electrical signals by a photomultiplier tube. However, its strong deliquescence reduces its luminous efficiency and transmission. It’s impossible to measure accurately the optical constants of the film. In this paper, we evaporate CsI on glasses, first, and then the high transparent material (MgF2 or SiO2) that prevents the deliquescence of the CsI film, with ion-assisted deposition procedure. Then, we can measure and analysis the CsI film by the ellipsometer, the X-ray diffractometer and AFM.

中文摘要 ．．．．．．．．．．．．．．．．．．．．．．．．． i
英文摘要 ．．．．．．．．．．．．．．．．．．．．．．．．． ii
目錄．．．．．．．．．．．．．．．．．．．．．．．．．．． iii
圖目錄 ．．．．．．．．．．．．．．．．．．．．．．．．．．vi
表目錄．．．．．．．．．．．．．．．．．．．．．．．．．．viii
第一章 緒論．．．．．．．．．．．．．．．．．． ．．．．．．1
第二章 基本理論 ．．．．．．．．．．．．．．．．．．．．．．2
2-1製鍍原理．．．．．．．．．．．．．．．．．．．．．．．2
2-1-1 熱電阻蒸鍍原理 ．．．．．．．．．．．．．．．．．． 2
2-1-2 end-Hall 離子源之原理 ．．．．．．．．．．．．．．． 2
2-2 碘化銫之材料特性．．．．．．．．．．．．．．．．．．．4
2-2-1 純碘化銫CsI晶體的性能及應用特點 ．．．．．．．．．．．．5
2-2-2摻鈉碘化銫CsI(Na)晶體的性能及應用特點 ．．．．．．．．．．5
2-2-3 摻鉈碘化銫CsI(Tl)晶體的性能及應用特點 ．． ．．．．．．．5
2-2-4 純CsI單晶之各項特性．．．．．．．．．．．．．．．6
2-3 X光繞射理論．．．．．．．．．．．．．．．．．．．．．7
2-4橢圓偏振儀量測原理．．．．．．．．．．．．．．．．．．9
第三章 實驗儀器裝置．．．．．．．．．．．．．．．．．．．12
3-1 系統架構．．．．．．．．．．．．．．．．．．．．．．12
3-1-1 真空系統．．．．．．．．．．．．．．．．．．．．12
3-1-2 熱電阻蒸鍍系統．．．．．．．．．．．．．．．．．13
3-1-3 離子輔助系統．．．．．．．．．．．．．．．．．．14
3-1-4 石英監控器．．．．．．．．．．．．．．．．．．．15
3-2 量測儀器．．．．．．．．．．．．．．．．．．．．．．17
3-2-1 PE-2000型FTIR紅外線光譜儀．．．．．．．．．．．17
3-2-2 光學顯微鏡 ．．．．．．．．．．．．．．．．．．．22
3-2-3 橢圓偏振儀 ．．．．．．．．．．．．．．．．．．．24
3-2-4 X-ray 繞射儀 ．．．．．．．．．．．．．．．．．．25
3-2-5 原子力顯微鏡 ．．．．．．．．．．．．．．．．．．26
第四章 實驗結果與討論．．．．．．．．．．．．．．．．．．．27
4-1 CsI單層薄膜之實驗結果與分析．．．．．．．．．．．．27
4-1-1 光學顯微鏡之分析 ．．．．．．．．．．．．．．．．28
4-1-2 FTIR紅外線光譜儀之分析．．．．．．．．．．．．．30
4-2在CsI薄膜上加鍍MgF2之實驗結果與分析．．．．．．．．34
4-2-1 光學顯微鏡之分析 ．．．．．．．．．．．．．．．．35
4-2-2 FTIR紅外線光譜儀之分析．．．．．．．．．．．．．37
4-3 在CsI薄膜上加鍍SiO2之實驗結果與分析．．．．．．．．41
4-3-1 光學顯微鏡之分析 ．．．．．．．．．．．．．．．．42
4-2-2 FTIR紅外線光譜儀之分析 ．．．．．．． ．．．．． 44
4-4 折射率與之量測．．．．．．．．．．．．．．．．．．．48
4-4-1在CsI薄膜上加鍍MgF2之光學量測．．．．．．．．．48
4-4-2 在CsI薄膜上加鍍SiO2之光學量測 ．．．．．．．．．50
4-5 XRD之分析．．．．．．．．．．．．．．．．．．．．53
4-6表面粗糙度之分析 ．．．．．．．．．．．．．．．．．．57
4-6-1在CsI薄膜上加鍍MgF2之AFM量測．．．．．．．．．57
4-6-2在CsI薄膜上加鍍SiO2之AFM量測 ．．．．．．．．．58
第五章 結論．．．．．．．．．．．．．．． ．．．．．．．．60
參考文獻．．．．．．．．．．．．．．．．．．．．．．．．．63

[1] R. F.knoll, Radiation Detection and Measurement (John Wiley, New York, 1984).
[2] C. Raptis , R. A. J Bunten and E. W. J. Mitchell, “ Raman scattering from molten alkali iodides”, J. Phys.C:Solid State Phys.No 29 , 4237-4245, 20 Oct (1981).
[3] M. Sandborg and G. A. Carlsson, “Influence of X-ray energy spectrum, contrasting detail and detector on the signal-to-noise ratio (SNR) and detective quantum efficiency (DQE) in projection radiography”, Phys. Med. Biol. 37 No 6 , 1245-1263,June (1992).
[4] C. K. Ong, K. S. Song, R Monnier and A M Stoneham, “Electronic structure and luminescence of CsI : Na”, J. Phys. C: Solid State Phys 12 No 21 , 4641-4646,14 Nov (1979).
[5] M. Asghar and D. C. Imrie, “Silicon photodiodes as photomultiplier replacements in industrial scintillation counters”,J. Phys. E: Sci. Instrum. 22 No 12 , 1012 -1015 , Dec (1989).
[6] 許正儀,“閃爍體碘化銫薄膜製備及其發光量測”,清華大學工程與系統科學系碩士論文,(1998).
[7] 李正中,薄膜光學與鍍膜技術,第三版(藝軒出版社,台北,2002).
[8] M. Gilo and N.Croitoru,“Study of HfO2 film prepared by ion- assisted deposition using a gridless end –Hall ion source,” Thin Solid film 350 ,203-208(1999).
[9]姜志偉,“End-Hall型離子源之研製”,輔仁大學物理學系碩士論文,23-26,(1994).
[10] R.L. Verma,“Potential and limitations of caesium iodide as a dynode material for use in electron multipliers”,J. Phys. D: Appl. Phys. 11 No 1 , 63- 71 ,11 Jan (1978).
[11] J.A.M. Lopes and C.A.N Conde, “VUV efficiency of chevron type CsI vacuum photocathodes”, J.Opt. 24 No 1, 15 - 18 ,Jan (1993).
[12]許樹恩、吳泰伯,X光繞射原理與材料結構分析 修訂版(中國材料科學學會,台北,1996).
[13]Y.V.G.S. Murti and C.S.N Murthy,“Vacancy pair formation energies in crystals with the CsCl structure”J. Phys. C: Solid State Phys. 5 No 4, 401-407,29 Feb (1972).
[14]M Ghezzo,“Method for calibrating the analyser and the polarizer in an ellipsometer”,J. Phys. D: Appl. Phys. 2 No 10 ,1483-1485,Oct (1969).
[14]李正中,薄膜光學與鍍膜技術 第三版,(藝軒出版社,台北,2002).
[15]C. Spataru, D. Teillet-Billy, J.P. Gauyacq, P. Testé and J.P. Chabrerie, “Ion-assisted electron emission from a cathode in an electric arc,”J. Phys. D: Appl. Phys. 30 No 7, 1135 -1145,7 Apr (1997).
[16]顧培夫,薄膜技術,(浙江大學出版社, 杭州,1990).
[17]Jimmy Bak and Sønnik Clausen,“FTIR emission spectroscopy methods and procedures for real time quantitative gas analysis in industrial environments”, Meas. Sci. Technol. 13 No 2 ,150- 156,Feb (2002).
[18]黃惠鈺,“以紅外光反射光譜來研究低矽鈣鋁矽氧化物玻璃之結構”,輔仁大學物理學系碩士論文,22 -27 (2003).
[19]許樹恩、吳泰伯,X光繞射原理與材料結構分析 修訂版,219〜240 (中國材料科學學會， 1996).
[20]陳進賢,“End-Hall離子源輔助熱蒸鍍氟化鎂之研究”,輔仁大學物理學系碩士論文,55, (2004).
[21] M. A. C. Wevers , J. C. Schön and M.Jansen , “Characteristic regions on the energy landscape of MgF2”,J. Phys. A: Math. Gen. 34 No 19 , 4041-4052, 18 May( 2001).
[22] G.Power , J. K. Vij and M. Shaw , “Refractive index at infrared wavelengths and dielectric permittivity of pure and fluorinated silicon dioxide from measurements of their thin films deposited on Si” ,J. Phys.D: Appl. Phys.37 No9,1362-1370,7 May (2004).
[23] A.L.N.Stevels and A.D.M.Schrama, “Charge-coupled device area x-ray detectors”Sci. Instrum, Vol. 73, No. 8, 2817-2818, Aug. (2002).
[24] Mitsunori Saito and Teruyuki Yasuda ,“Complex refractive - index spectrum of liquid crystal in the infrared ”, Appl. Opt. , 42, No. 13 , 2370 - 2371, 1 May (2003).