臺灣博碩士論文加值系統

本研究採用微波電漿化學氣相沉積法合成奈米碳管。利用微波氫電漿對鎳金屬薄膜進行預處理，藉由改變預處理微波氫電漿之製程壓力、微波必v、以及基板溫度，達到控制預處理後鎳金屬薄膜之型態，進而探討後續對成長奈米碳管及其場發射特性之影響。由實驗結果得知，鎳金屬薄膜經過預處理後可形成奈米等級的催化劑顆粒。預處理製程壓力過低(20torr)或過高(30torr)，鎳金屬薄膜會形成島狀物或催化劑顆粒表面不均勻。改變微波必v與基板溫度可控制催化劑顆粒之平均粒徑及顆粒與顆粒之間的平均距離。當金屬薄膜形成島狀物或顆粒表面不均勻時，成長出之奈米碳管品質較差。奈米碳管之外徑與催化劑顆粒成正比。當預處理基板溫度達400°C時，奈米碳管可成長出較直的碳管。當預處理基板溫度達500°C時，後續成長奈米碳管之品質下降。奈米碳管之開啟電場隨著催化劑顆粒之平均直徑減少而下降。奈米碳管之最大電流密度隨著催化劑顆粒之間距增加而增加。

In this research, carbon nanotubes have been synthesized by microwave plasma chemical vapor deposition. The catalyst thin film has been pretreated by ion bombardment from microwave hydrogen plasma. For control the catalyst microstructure, we change microwave plasma parameter (working pressure, microwave power, substrate temperature) for pretreatment on growth carbon nanotube and field emission properties. Experiment results show that the parameter (working pressure : 25 torr, microwave power : 900W) have the best microstructure for pretreated catalyst. The catalyst average particle diameter decrease and particle-particle distance increase depend on increase microwave power. The catalyst average particle diameter decrease and particle-particle distance increase depend on increase substrate temperature. The best quality carbon nanotubes have been catalyzed by separated particles. The carbon nanotube outer diameter decrease by increase microwave power for pretreatment. The catalyst particles which melted had bad catalysis for pretreatment. The turn on field decrease and current density increase depend on microwave power for pretreatment. The turn on field decrease and current density increase depend on substrate temperature for pretreatment before 400°C.

中文摘要 i
英文摘要 ii
致謝 iii
目錄 iv
圖目錄 vi
一、前言 1
二、原理與文獻回顧 4
2.1 奈米碳管 5
2.1.1 單層奈米碳管之結構 5
2.1.2 多層奈米碳管之結構 7
2.1.3 奈米碳管合成方法 8
2.1.4 奈米碳管之成長機制 12
2.1.5 場發射基本原理 15
2.2 微波電漿之理論 19
2.2.1 微波 19
2.2.2 電漿 19
2.2.3 微波電漿 22
三、實驗步驟 23
3.1 實驗步驟 23
3.2 實驗與檢測設備 26
3.2.1 直流濺鍍系統 26
3.2.2 微波電漿化學氣相沉積系統 27
3.2.3 場發射掃描式電子顯微鏡- 27
3.2.4 電壓-電流量測系統 28
四、結果與討論 29
4.1預處理製程壓力不同之影響 29
4.1.1.預處理製程壓力不同對金屬薄膜之影響 29
4.1.2.預處理製程壓力不同對成長奈米碳管之影響 29
4.1.3.預處理製程壓力不同對奈米碳管場發射特性之影響 30
4.2預處理製程必v不同之影響 31
4.2.1.預處理製程必v不同對金屬薄膜之影響 31
4.2.2.預處理微波必v不同對成長奈米碳管之影響 31
4.2.3.預處理微波必v不同對奈米碳管場發射特性之影響
32
4.3預處理基板溫度不同之影響 33
4.3.1. 預處理基板溫度不同對金屬薄膜之影響 33
4.3.2.預處理基板溫度不同對成長奈米碳管之影響 34
4.3.3.預處理基板溫度不同對奈米碳管場發射特性之影響 35

五、結論 37
參考文獻 39

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