臺灣博碩士論文加值系統

　　近紫外光(Near ultra-violet，NUV)搭配螢光粉的方法是目前白光發光二極體(White-light LED，WLED)發展的主要課題之一，其中所使用的螢光粉中，又以紅色光譜區效率最待提升。本研究採溶膠-凝膠法合成MgSiO3：Eu3+紅色螢光粉體，檢討熱處理條件及摻雜物添加量對合成粉體之微結構以及於383 nm近紫外光的激發光源下發光特性之影響。
　　
　　研究結果顯示，於800℃煆燒2 h合成之MgSiO3:Eu3+ 12 mole%螢光粉體，以613 nm為發射波長時，其吸收或激發波長介於350 ~ 420 nm。以383 nm為激發光源時，此合成之螢光粉體，其發射強度是隨煆燒溫度、持溫時間、Eu3+摻雜濃度以及鈉離子添加量等的增加而增加，且於800℃煆燒4 h及6 mole%鈉離子添加量有相對較強之發射強度。合成之MgSiO3:Eu3+ 12 mole%螢光粉體，其相對發射強度會受研磨處理而降低；此強度劣化現象可再藉適當之熱處理而回復其部分之發射強度。

　The development of white-light LED in near-UV region with phosphors is one of the significant topics recently. However, the efficiency improvement at red interval is specially emphasized. In this study, synthesis of MgSiO3:Eu3+ phosphor via sol-gel method was investigated. Effects of calcination conditions, contents of Eu3+ and Na+ on microstructure and photoluminescence (PL) properties by 383 nm pumping source of synthesized phosphors were also discussed.
　　
　The results show the absorption or excitation wavelength of MgSiO3:Eu3+ 12 mole% phosphor is between 350 ~ 420 nm as the emission peak is at 613 nm. Relative emission intensity of MgSiO3: Eu3+ x mole% phosphors is increased with the increase of calcination temperature, holding time and the contents of Eu3+ and Na+ doped. The relative emission intensity of MgSiO3:Eu3+ 12 mole% phosphor decreases after grinding process, and the intensity can be recovered by post heat treatment at 800℃.
MgSiO3, red, phosphor, UV, luminescence, sol-gel method

中文摘要………………………………………………………………………Ⅰ
英文摘要………………………………………………………………………Ⅱ
誌謝……………………………………………………………………………Ⅲ
目錄……………………………………………………………………………Ⅳ
表目錄…………………………………………………………………………Ⅶ
圖目錄…………………………………………………………………………Ⅷ
第一章　緒論…………………………………………………………………1
第二章　理論基礎與文獻回顧………………………………………………5
2-1螢光材料分類………………………………………………………………5
2-2　無機螢光材料之組成……………………………………………………5
2-2-1　螢光材料之主體材料…………………………………………………5
2-2-2　螢光材料之摻雜物……………………………………………………6
2-3　稀土離子的特性…………………………………………………………7
2-3-1　稀土離子之電子躍遷…………………………………………………7
2-3-2　稀土離子的發光特性…………………………………………………7
2-4　螢光材料之發光機制……………………………………………………8
2-4-1　LaPorte選擇律………………………………………………………8
2-4-2　自旋選擇律……………………………………………………………8
2-4-3　螢光材料之激發與發射………………………………………………9
2-5　螢光體性質……………………………………………………………10
2-5-1　發光亮度與濃度效應………………………………………………10
2-5-2　電子雲擴張效應……………………………………………………11
2-5-3　晶格場理論…………………………………………………………11
2-5-4　史托克位移…………………………………………………………12
2-6　色彩簡介………………………………………………………………14
2-6-1　視覺敏感度…………………………………………………………14
2-6-2　CIE色度座標…………………………………………………………14
2-6-3　色溫…………………………………………………………………16
2-6-4　演色性與照明效率…………………………………………………16
2-7溶膠－凝膠法……………………………………………………………17
2-7-1溶膠－凝膠法反應機構………………………………………………17
2-7-2溶膠-凝膠法的原理……………………………………………………18
2-7-3　溶膠－凝膠法的優點………………………………………………19
2-8　擴散理論………………………………………………………………20
第三章　實驗方法及步驟……………………………………………………33
3-1　實驗用起始原料………………………………………………………33
3-2　實驗流程………………………………………………………………34
3-2-1　起始原料配比………………………………………………………35
3-2-2　混合、凝膠化及乾燥………………………………………………35
3-2-3　煆燒及研磨處理……………………………………………………35
3-3性質分析及實驗設備……………………………………………………36
3-3-1　X-RAY繞射儀…………………………………………………………36
3-3-2　熱重熱差分析………………………………………………………36
3-3-3傅立葉轉換紅外線吸收光譜儀………………………………………36
3-3-4場發射型掃瞄式電子顯微鏡…………………………………………36
3-3-5高解析穿透式電子顯微鏡……………………………………………36
3-3-6光致發光光譜儀………………………………………………………37
3-4　粉體粒度分佈之量測…………………………………………………37
3-5　發光特性之量測………………………………………………………37
第四章　結果與討論…………………………………………………………40
4-1　粉末之特性……………………………………………………………40
4-1-1　前驅物之熱重熱差分析……………………………………………40
4-1-2　粉末之FT-IR分析……………………………………………………40
4-1-3粉末之微結構…………………………………………………………40
4-2燒結條件對MgSiO3:Eu3+光致發光現象之影響……………………………41
4-2-1結晶化對MgSiO3:Eu3+激發與發射現象之影響………………………41
4-2-2　煆燒溫度對MgSiO3:Eu3+光致發光現象之影響……………………43
4-2-3　持溫時間對MgSiO3:Eu3+光致發光現象之影響……………………44
4-3　活化劑添加量對MgSiO3:Eu3+光致發光現象之影響…………………44
4-4　鈉離子添加量對MgSiO3:Eu3+螢光粉之影響…………………………45
4-4-1　鈉離子添加量對MgSiO3:Eu3+粒子型態之影響……………………45
4-4-2　鈉離子添加量對MgSiO3:Eu3+光致發光現象之影響………………46
4-5　研磨過程對MgSiO3:Eu3+螢光粉之影響………………………………46
4-5-1研磨過程對MgSiO3:Eu3+粒子型態之影響……………………………46
4-5-2研磨處理對MgSiO3:Eu3+光致發光現象之影響………………………47
4-5-3熱處理對研磨後之MgSiO3:Eu3+粒子型態之影響……………………47
4-5-4熱處理對研磨後之MgSiO3:Eu3+光致發光現象之影響………………47
第五章　結論…………………………………………………………………71
第六章　未來展望……………………………………………………………72
參考文獻………………………………………………………………………73

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