臺灣博碩士論文加值系統

　　本研究之微感測器中的脊狀光波導是利用反應式離子蝕刻機(RIE : Reactive Ion Etching）對高分子材料DR1/PMMA蝕刻出脊狀的波導；而橫向電場(TE)及橫向磁場(TM)模態偏振光波導則是利用UV光來對DR1/PMMA做光漂白(Photobleaching)。研究中使用有機染色分子DR1(disperse red one)材料當核心層的目的是因為其在未光漂白前的TE-mode與TM-mode的折射係數差值幾乎是相同；但經過光漂白之後，nTM值會隨照光的時間增加而增加，而nTE值會隨曝光的時間增加而減少。

　　本論文中，以RIE(Reactive Ion Etching)製作成脊狀波導，並利用Photobleaching製作出TE模態偏振光波導及TM模態偏振光波導，其量測結果之消光率(Extinction Ratio)各別為15.8dB、1.19dB；最後，綜合脊狀波導及TM模態偏振光漂白波導的導光特性、及結合表面電漿共振原理製作出光漂白波導式表面電漿共振微感測器。當其產生表面電漿共振現象後，所量測到消光率為20dB。

　　In this research, the micro-sensor of the rid waveguide was etched waveguide on the polymer material DR1/DMMA. The transverse electric (TE) mode and the transverse magnetic (TM) of the polarized waveguide was photobleached by UV light on DR1/PMMA. We use disperse red one (DR1) material as the core layer. After Photobleaching, the value will rise up with the exposure time, but the value will reduce.

　　In this thesis, we used RIE(Reactive Ion Etching) manufacture the rib waveguide and we also manufactured TE-mode and the TM-mode polarized light waveguide through photobleaching. The results of the extinction ratio in TE and the TM polarizer are 15.8dB and 1.19dB, respectively. In final, we integrate the rid waveguide and TM-mode polarization Photobleaching-Induced Waveguide of transmission light characteristic, and the principle of SPR to design the surface plasmon resonance micro-sensor. When the surface plasmon resonance phenomenon comes out, the result will be 20dB extinction ration at the wavelength of 632.8nm.

中文摘要 I
英文摘要 II
誌謝 III
目錄 IV
表目錄 VIII
圖目錄 IX

第一章 緒論

1.1前言 1
1.2 文獻回顧 5
1.2.1稜鏡式表面電漿共振感測器 7
1.2.2光波導式表面電漿共振感測器 10
1.2.3光柵式表面電漿共振感測器 11
1.3研究動機與目的 12
1.4研究方法 13
1.5章節瀏覽扼要 15

第二章 理論分析

2.1高分子材料的特性分析及應用 16
2.2光波導理論 24
2.2.1光波導基礎理論 28
2.2.2 TE 與TM 模態 31
2.2.2.1 TE模態數 32
2.2.2.2 TM模態數 34
2.2.3光波導耦合 37
2.3表面電漿共振(Surface Plasma Resonance)理論 39
2.3.1表面電漿波的基本認識 39
2.3.2激發表面電漿波之數學模式 42
2.3.3 Kretschmann架構的反射率 46
2.3.4表面電漿共振感測器最佳化模擬 49
2.4光漂白( Photobleaching )高分子波導的原理 50
2.5光漂白波導表面電漿共振感測器結構設計 54
2.5.1 (TE-Pass)單軸式光漂白波導 55
2.5.2 (TM-Pass)單軸式光漂白波導 57
2.5.3單軸結構光漂白-表面電漿共振整合波導 58
2.5.4 Y型分岔結構光漂白-表面電漿共振整合波導 59

第三章 元件製作

3.1高分子材料的製備 60
3.2光罩設計 63
3.2.1光漂白偏光波導光罩設計 65
3.2.2單軸結構光漂白-表面電漿共振整合波導光罩設計 66
3.2.3 Y型分岔結構光漂白-表面電漿共振整合波導光罩設計 71
3.3微感測器製作步驟 75
3.3.1光漂白偏光波導製作流程 75
3.3.2光漂白偏光波導製作說明 79
3.3.3光漂白波導式表面電漿共振感測器製作流程 89
3.3.4光漂白波導式表面電漿共振感測器製程說明 97

第四章 元件量測

4.1量測方法 121
4.1.1元件的切割與研磨 121
4.1.2光學量測架構 130
4.2量測結果 135

第五章 實驗結果與討論

5.1 結論 144
5.2 問題與討論 146

參考文獻 151
附錄(A) 155
作者簡介 156

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