第一章
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〔36〕F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1–x)0.5In0.5P/GaP light-emitting diodes”, Appl. Phys. Lett., 64, pp.2839-2841, May 1994.
〔37〕Y. Okuno, M. Aoki, T. Tsuchiya, and K. Uomi, “Fabrication of (001) InP-based 1.55-µm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)”, Appl. Phys. Lett. , 67, pp. 810-812 , August 1995.
〔38〕G. E. Höfler, D. A. Vanderwater, D. C. DeFevere, F. A. Kish, M. D. Camras, F. M. Steranka, and I.-H. Tan, “Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers”, Appl. Phys. Lett., 69, pp. 803-805, August 1996.
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〔43〕F. A. Kish, D. A. Vanderwater, M. J. Peanasky, M. J. Ludowise, S. G. Hummel, and S. J. Rosner, “Low-resistance Ohmic conduction across compound semiconductor wafer-bonded interfaces”, Appl. Phys. Lett., 67, pp.2060-2062, October 1995.
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〔45〕Y. Okuno, K. Uomi, M. Aoki, T. Taniwatari, M. Suzuki, and M. Kondow, “Anti-phase direct bonding and its application to the fabrication of InP-based 1.55 µm wavelength lasers on GaAs substrates”, Appl. Phys. Lett., 66, pp.451-453, January 1995.
第二章
〔1〕 F. A. Kish, D.A. Vanderwater, M. J. Peanasky, M. L. Ludowise, S. G. Hummel, and S. J. Rosner, “Low-resistance Ohmic conduction across compound semiconductor wafer-bonded interfaces”, Appl. Phys. Lett., 67, pp. 2060-2062, October 1995.
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第三章
〔1〕Y. Okuno, K. Uomi, M. Aoki, T. Taniwatari, M. Suzuki, and M . Kondow, “Anti-phase direct bonding and its application to the fabrication of InP-based 1.55 µm wavelength lasers on GaAs substrates”, Appl. Phys. Lett., 66, pp.451-453, January 1995.
〔2〕Yae Okuno, “Investigation on direct bonding of III–V semiconductor wafers with lattice mismatch and orientation mismatch”, Appl. Phys. Lett., 68, pp.2855-2857, May 1996.
〔3〕F. A. Kish, D. A. Vanderwater, M. J. Peanasky, M. J. Ludowise, S. G. Hummel, and S. J. Rosner, “Low-resistance Ohmic conduction across compound semiconductor wafer-bonded interfaces”, Appl. Phys. Lett., 67, pp.2060-2062, October 1995.
〔4〕Frank Shi, Scott MacLaren, Chaofeng Xu, K. Y. Cheng, and K. C. Hsieh, “Hybrid-integrated GaAs/GaAs and InP/GaAs semiconductors through wafer bonding technology: Interface adhesion and mechanical strength”, J. Appl. Phys., 93, pp.5750-5756, May 2003.
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第四章
〔1〕F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, M. G. Craford, and V. M. Robbins, “Very high-efficiency semiconductor waferbonded transparent-substrate (AlxGa1–x)0.5In0.5P/GaP light-emitting diodes”, Appl. Phys. Lett.,64, pp.2839-2841, May 1994.
〔2〕Y. Ohiso, H. Okamoto, R. Iga, K. Kishi, K. Tateno, C. Amano, “1.55-μm buried-heterostructure VCSELs with InGaAsP/lnP-GaAs/AlAs DBRs on a GaAs substrate”, IEEE Journal of Quantum Electronics, 37, pp.1194-1202, September 2001.
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〔4〕Y. Okuno, K. Uomi, M. Aoki, T. Taniwatari, M. Suzuki, and M. Kondow, “Anti-phase direct bonding and its application to the fabrication of InP-based 1.55 µm wavelength lasers on GaAs substrates”, Appl. Phys. Lett., 66, pp.451-453, January 1995.
〔5〕G. E. Höfler, D. A. Vanderwater, D. C. DeFevere, F. A. Kish, M. D. Camras, F. M. Steranka, and I.-H. Tan, “Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers”, Appl. Phys. Lett., 69, pp.803-805, August 1996.
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〔11〕T. Ueno, T. Irisawa, Y. Shiraki, A. Uedono, S. Tanigawa, R. Suzukic, T. Ohdairac, T. Mikado, “Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy”, Journal of Crystal Growth 227, pp 761-765, July 2001.
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第五章
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