矽鍺/矽異質接面動態臨界電壓電晶體及矽鍺源/汲極結構之研製
摘要
在本論文中，我們利用矽鍺/矽異質結構，實際製作出Si1-xGex(x=0、0.3)動態臨界電壓電晶體(Dynamic Threshold Voltage MOSFET, DTMOS)及一般金氧半電晶體(Standard MOS)。並且分別在溫度為77K、150K、300K、350K及400K時，量測其直流特性表現，然後去比較溫度對DTMOS及Standard MOS的影響。除了直流特性分析外，我們也在溫度240K、300K及350K時分別比較元件的低頻雜訊特性。
從我們的量測結果中，可看出SiGe DTMOS的確擁有較Si Standard MOS佳的直流特性、低頻雜訊和熱穩定性，具有在低電壓、低功率及高速應用方面的潛力。
本論文的另一重點為利用嵌入式矽鍺源/汲極結構抑制元件的短通道效應，並且實際使用ICP與LPCVD解決矽鍺源/汲極結構中兩個關鍵製程，嵌入式源/汲極蝕刻與矽鍺選擇性沉積。期待利用此矽鍺源/汲極結構更進一步改良元件性能，以實現未來奈米金氧半電晶體發展之趨勢。

目錄
圖目錄…………………………………………………………………………Ⅰ
表目錄…………………………………………………………………………Ⅴ
序章 論文結構介紹…………………………………………………………Ⅵ

第一章 介紹………………………………………………………………… 1
1-1 前言………………………………………………………………………1
1-2 研究動機…………………………………………………………………2
1-3 研究目的與應用…………………………………………………………3

第二章 元件製程與量測分析……………………………………………… 9
2-1 前言………………………………………………………………………9
2-2 矽鍺/矽異質接面動態臨界電晶體製程步驟………………………… 9
2-3 DTMOS與Standard MOS在常溫下之特性比較…………………………10
2-3-1 Id(Ib)-Vg的特性比較………………………………………………10
2-3-2 臨界電壓的比較 ……………………………………………………11
2-3-3 次臨界擺輻的比較………………………………………………… 12
2-3-4 導通電流的比較…………………………………………………… 13
2-3-5 轉導值的比較……………………………………………………… 14
2-3-6 靜態漏電流的比較………………………………………………… 14
2-3-7 低頻雜訊的比較…………………………………………………… 15
2-3-8 通道長度對DTMOS特性的影響………………………………………16
2-4 DTMOS與Standard MOS在變溫下之特性表現…………………………17
2-4-1 Id(Ib)-Vg對溫度的特性比較………………………………………17
2-4-2 轉導值對溫度的特性比較………………………………………… 18
2-4-3 臨界電壓對溫度的特性比較……………………………………… 19
2-4-4 次臨界擺輻對溫度的特性比較…………………………………… 20
2-4-5 導通電流和截止電流對溫度的特性比較………………………… 20
2-4-6 低頻雜訊對溫度的特性比較……………………………………… 21
2-5 結論…………………………………………………………………… 21

第三章 利用矽鍺源/汲極結構改善DTMOS性能……………………………38
3-1 前言……………………………………………………………… 38
3-2 短通道效應及其改善方法……………………………………… 38
3-3 矽鍺在閘極與源/汲極結構之應用………………………………42
3-4 矽鍺源/汲極之形成方式與模擬分析……………………………44
3-4-1 嵌入式源/汲極結構…………………………………………………44
3-4-2 結構設計…………………………………………………………… 45
3-4-3 摸擬結果與分析…………………………………………………… 45
3-5 結論……………………………………………………………… 47

第四章 嵌入式矽鍺源/汲極結構之關鍵製程開發……………………… 60
4-1 前言……………………………………………………………… 60
4-2 嵌入式源/汲極結構製程步驟…………………………………………60
4-2-1 乾式電漿蝕刻製程設備…………………………………………… 61
4-2-2 間隙壁回蝕刻……………………………………………………… 62
4-2-3 源/汲極等向性蝕刻…………………………………………………64
4-3 複晶矽鍺源/汲極薄膜的沉積…………………………………………64
4-3-1 薄膜沉積製程設備………………………………………… 64
4-3-2 矽鍺選擇性沉積…………………………………………………… 65
4-4 結論……………………………………………………………… 69

第五章 總結與未來展望……………………………………………………79

參考文獻資料……………………………………………………………… 80

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