臺灣博碩士論文加值系統

本篇論文主要針對傳統型與W型電容式射頻微機電開關，利用不同材料，在機械特性和電磁特性做完整的比較。在機械特性方面，我們以有限元素分析法，對開關做一套有系統的結構與熱分析，研究微機電開關的位移、應力、彈性係數、驅動電壓、自然頻率及熱應力，在電磁特性方面，則以高頻3D結構全波電磁模擬方法來預測開關之S參數，有系統的探討開關連接臂尺寸上的改變對於機械特性與電性的影響。最後利用田口法找出一組最佳化結構。
在元件實作方面，前後總共使用四道光罩來完成元件製作，而且易於與CMOS標準製程整合。其中製程以高阻值的矽晶片當作基底，中間介電物質則使用氮化矽，而傳輸線和上部金屬薄膜則使用鋁當作材料，並以光阻當作犧牲層，最後除去犧牲層來完成結構的釋放。

In this thesis, we utilize different materials to do intact comparison in the mechanical characteristics and electromagnetic characteristics for the conventional and W-type RF microelectromechanical system (MEMS) switches. In mechanical characteristics, we make a set of systematic structure and thermal analysis to the switch with the finite element method (FEM). The mechanical design focuses on the displacement, the stress, the effective stiffness constant, the pull-down voltage, the natural frequency and the thermal stress. Besides in electromagnetic characteristics, we predict the S-parameter on the basis of the full-wave electromagnetic simulation. Finally, we utilize Taguchi method to find out a group of optimal structure.
In fabrication, we use four masks to finish it, and can integrate with CMOS. In order to conform to IC technology, we select silicon with a relative permittivity of 11.9 and thickness of 525μm. The silicon nitride dielectric layer with a relative permittivity of 7.5 is on the central conductor of the CPW transmission line. The metal material selects the aluminum and selects the photoresist as scarification. Finally, we release scarification to finish.

目 次 頁次
中文摘要 I
英文摘要 II
謝誌 III
目次 IV
圖次 VI
表次 IX

第一章 緒 論 1
1-1前言 1
1-2研究動機 1
1-3文獻回顧 2
1-4研究內容與大綱 6

第二章 射頻微機電開關原理、模型及相關理論 8
2-1簡介 8
2-2開關模型 10
2-2-1開關之動作 10
2-2-2靜電驅動原理 12
2-2-3 等效電路模型 14
2-3相關理論 15
2-3-1微帶傳輸線 15
2-3-2 S-參數 16
2-3-3有限元素法 19
2-3-4 多領域耦合分析 21

第三章 結構分析 24
3-1 開關結構與材料 24
3-2 尺寸設計 25
3-3 結構分析 27
3-3-1 ANSYS簡介 27
3-3-2 靜態分析 28
3-3-3 模態分析 47
3-4 總整理 52

第四章 耦合與電磁分析 57
4-1結構熱應力分析 57
4-1-1應力來源介紹 57
4-1-2模擬分析 59
4-2電性模擬 69
4-2-1 HFSS簡介 69
4-2-2 開關關的狀態 69
4-2-3 開關開的狀態 72
4-2-4 蝕刻孔洞的影響 75

第五章 應用田口方法於結構最佳參數設計 77
5-1 簡介 77
5-2 參數選定的原則 78
5-3直交表選定配置的原則 80
5-3-1 直交表 80
5-4 最佳化設計 80
5-5 分析結果 81

第六章 開關元件之實作流程 87
6-1 面型微加工技術及所用製程設備簡介 87
6-1-1 薄膜沉積技術 87
6-1-1-1 熱阻絲蒸鍍系統 87
6-1-1-2 電漿輔助化學氣相沉積系統 88
6-1-2 微影技術 89
6-1-3 蝕刻技術 90
6-1-4 氧化 92
6-2 光罩之設計 92
6-3 製程流程 93
6-4 製程參數 97
6-5 製程上的建議與改善 100

第七章 結論 103

參考文獻 105

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