臺灣博碩士論文加值系統

本論文運用低壓化學氣相沈積(LPCVD)系統成長多晶矽鍺(Poly-Si0.82Ge0.18)薄膜，並探討Poly-Si0.82Ge0.18薄膜應用於累崩光二極體(APD)元件之研究；並採用銦錫氧化物(ITO)作為APD之陽極透明導電層。在Poly-Si0.82Ge0.18薄膜方面，實驗採用之退火參數為退火溫度700℃、800℃、900℃，退火時間30、60、90分鐘，使用氣體為氮氣。由實驗比較發現，退火溫度800℃時間30分鐘時，Poly-Si0.82Ge0.18薄膜會有最佳的薄膜特性。在ITO薄膜方面，由實驗結果可知，基板溫度100℃，使用氮氣退火溫度300℃，時間1小時之條件為沈積ITO薄膜之最佳參數。
在APD元件製作方面，吾人製作n+/n/p/p+-Poly-Si0.82Ge0.18/ SiO2/Si基板結構之APD元件。比較Poly-Si0.82Ge0.18之薄膜特性分析結果，吾人對APD元件進行退火處理。經由實驗發現，經由氮氣退火800℃，時間30分鐘之APD元件，於固定光照度3.0μW、逆向偏壓27V時，光電流為143.75μA、響應係數為47.92 、量子效率82.94%、光暗電流比142.75。經由比較發現，氮氣退火800℃，時間30分鐘之APD元件其感應之光電流為未經退火處理之APD的7.67倍，為APD元件製作之最佳參數。

In this thesis, the Low Pressure Chemical Vapor Deposition (LPCVD) system is used to deposit the Poly-Si0.82Ge0.18 thin films. The Poly-Si0.82Ge0.18 thin films were used for the Avalanche photodiode (APD) device. The ITO films were used as the transparent conductive thin film material of the APD anode. In the experiment of the Poly-Si0.82Ge0.18 thin films, the annealing temperature is 700℃、800℃、900℃, and the annealing time is 30、60、90 minutes using nitrogen. From the experimental results, the Poly-Si0.82Ge0.18 thin films have the best properties with the 800℃ annealing temperature and the 30 minutes annealing time. In the experiment of the ITO films, the ITO films have the best properties when the depositing substrate temperature is 100℃ with the 300℃ annealing temperature and the one hour annealing time using nitrogen.
In the preparation of APD device, we have prepared APD device of n+/n/p/p+-Poly-Si0.82Ge0.18/SiO2/Si structure. In order to compare characteristics of Poly-Si0.82Ge0.18 thin film, we perform annealing on the APD device. The experimental result shows that for an APD device, through an annealing at 800℃ in the N2 environment for 30 minutes, and at a fixed optical illumination of 3.0μW and a reverse bias of 27V, the measured photocurrent is 143.75μA, responsivity 47.92 , quantum efficiency 82.94%, and a current ratio of 142.75. From the experimental result comparison, we found that APD device annealed at 800℃ in N2 environment for 30 minutes has a response photocurrent 7.67 times as compared to that of non-annealed APD device, this is believed to be the best parameter in the preparation of APD device.

Contents

Chapter 1 Introduction…….……………………………………..1

1-1. Overview……………………………………...………….1
1-2. Outline…………...……………………………………….7

Chapter 2 Deposition System and Experiment Equipments…………………………………………..9

2-1. Low Pressure Chemical Vapor Deposition (LPCVD)………………………………………………...9
2-2. Ion Implanter…………………………….…….……….11
2-3. Magnetron Sputter…………………….………...……..13
2-4. Thermal Evaporator……...……………………………14
2-5. Anneal System……………………………….…………15
2-6. Exposure and Photolithography Equipment……..…..15

Chapter 3 Characteristic Analysis of the Poly Si0.82Ge0.18 films………………………………….17

3-1. Introduction………………...………………..…………..17
3-2. The Fabrication Process of Poly-Si0.82Ge0.18 Films...…..21
3-2-1 Cleaning……….………………………...……….21
3-2-2 Growth Process………………...…………….….22
3-3. Scanning Electron Microscope (SEM) Analysis……….22
3-4. X-ray Diffraction (XRD) Analysis……………………...24
3-5. Energy Dispersive X-ray Spectrometer (EDS) Analysis………………………………………………….26
3-6. Atomic Force Microscopic (AFM) Analysis….………..27
3-7. Secondary-Ion Mass Spectrometry( SIMS） Analysis...29
3-8. X-Ray Photoelectron Spectroscopy (XPS) Analysis…..30
3-9. Conclusion…………….…………………….……………32

Chapter 4 Characteristic Analysis of the ITO films…….33

4-1. Introduction……………..…...…………………………33
4-2. Experiment…………………………...…………………35
4-3. Results and Discussion…………………………………36
4-3-1 Transmittance………………………..……………...36
4-3-2 Resistivity………………………………………...…37
4-3-3 Surface morphology………...…………………...….40
4-3-4 XRD patterns……………………………..…………41
4-3-5 EDS Analysis…………………………………….....42
4-4. Conclusion.……………………………………….……..43

Chapter 5 Avalanche Photodiode……………………...44

5-1. Introduction…………..………………………………...44
5-2. Theoretical Analysis of APD device…………………..45
5-2-1 Theoretical Analysis…...……………………………45
5-2-2 Dark Current and Photo-Current Models…………...46
5-2-3 Quantum Efficiency……………………..………….47
5-2-4 Response Speed……………………………..………48
5-2-5 Responsivity………………………………………...48
5-2-6 Bias……………………………………………….…49
5-3. The fabrication of APD device………………………...50
5-3-1 Fabrication process……………………………….…50
5-3-2 Oxide………………………………………….....….54
5-3-3 Etching the Poly-Si0.82Ge0.18 Films…………….…....55
5-3-4 The Sputtering of ITO films…………………..…….55
5-3-5 Evaporation…………………………………………55
5-3-6 Annealing……………...……………………………56
5-4. Results and Discussion…………………..……………..57

Chapter 6 Conclusion……………………………………………63
6-1. Summary……………………………...………………….63
6-2. Further……………………………………………...……64




Reference…………………………………………...……………………66




Table 3-1 The roughness of the Poly-Si0.82Ge0.18 films annealing at different conditions ………………………………………...72






Figure Captions

Fig 2-1 LPCVD Reaction Chamber………..…………........……..….73
Fig 2-2 Implanter System……..…………………………….…….....74
Fig 2-3 The magnetron sputter system………..…….…………….…75
Fig 2-4 The thermal evaporation system……………..……..…….....76
Fig 2-5 The annealing system………………..……………..……......77
Fig 2-6 The contact alainer...………………………………………...78
Fig 3-1 The Scanning Electron Microscope (SEM, Hitachi S-4100)………………………………………………...…….79
Fig 3-2 The surface morphology of the Poly-Si0.82Ge0.18 films before annealing ……………………...………………...….....…….80
Fig 3-3 The surface morphology of the Poly-Si0.82Ge0.18 films annealing at 700℃ for (a) 30 (b) 60 (c) 90 minutes.....................................................................................81
Fig 3-4 The surface morphology of the Poly-Si0.82Ge0.18 films annealing at 800℃ for (a) 30 (b) 60 (c) 90 minutes.....................................................................................82
Fig 3-5 The surface morphology of the Poly-Si0.82Ge0.18 films annealing at 900℃ for (a) 30 (b) 60 (c) 90 minutes.....................................................................................83
Fig 3-6 The XRD pattern of the Poly-Si0.82Ge0.18 films before annealing…………………………………………..………...84
Fig 3-7 The XRD pattern of the Poly-Si0.82Ge0.18 films annealing at 700℃ for (a)30 (b)60 (c)90 minutes……………………..…85
Fig 3-8 The XRD pattern of the Poly-Si0.82Ge0.18 films annealing at 800℃ for (a)30 (b)60 (c)90 minutes……………………..…87
Fig 3-9 The XRD pattern of the Poly-Si0.82Ge0.18 films annealing at 900℃ for (a)30 (b)60 (c)90 minutes……………………..…89
Fig 3-10 The EDS analysis of the Poly-Si0.82Ge0.18 films……………..91
Fig 3-11 The AFM (Digital Instruments Inc., NanoScope E) system...92
Fig 3-12 Illustration of Roughness………………………………..…..93
Fig 3-13 The surface morphology (3D) of the Poly-Si0.82Ge0.18 films before annealing……………………………..……………..94
Fig 3-14 The surface morphology (3D) of the Poly-Si0.82Ge0.18 films annealing at 700℃ for (a)30 (b)60 (c)90 minutes………......95
Fig 3-15 The surface morphology (3D) of the Poly-Si0.82Ge0.18 films annealing at 800℃ for (a)30 (b)60 (c)90 minutes………......96
Fig 3-16 The surface morphology (3D) of the Poly-Si0.82Ge0.18 films annealing at 900℃ for (a)30 (b)60 (c)90 minutes………......97
Fig 3-17 The roughness results in different annealing conditions........98
Fig 3-18 The SIMS (Cameca,IMS-4f) system………..……………….99
Fig 3-19 The SIMS analysis of the poly-Si0.82Ge0.18 films (a) before annealing(b)annealing at 700℃ for 30 min (c) annealing at 700℃ for 60 min（d）annealing at 700℃ for 90 min（e）annealing at 800℃ for 30 min…………………………..…100
Fig 3-20 The SIMS depth analysis of Ge in different annealing conditions…………….....................................................…101
Fig 3-21 The ESCA (Thermo VG Scientific ESCALAB 250) system………………………………………….…………..102
Fig 3-22 The XPS valence band spectrum for the elements of Si element（2p3/2）(a) before annealing(b) annealing at 700℃ for 90 minutes(c) annealing at 800℃ for 30 minutes(d) annealing at 800℃ for 60 minutes(e) annealing at 800℃ for 90 minutes (f) annealing at 900℃ for 30 minutes...............................…103
Fig 3-23 The XPS valence band spectrum for the elements of Ge element（3d5/2）(a) before annealing(b) annealing at 700℃ for 90 minutes(c) annealing at 800℃ for 30 minutes(d) annealing at 800℃ for 60 minutes(e) annealing at 800℃ for 90 minutes (f) annealing at 900℃ for 30 minutes……………..…...…104
Fig 4-1 The cross-section of the ITO on Glass………………..........105
Fig 4-2 Transmittance of Corning（7059）glass….............................106
Fig 4-3 The transmittance of ITO films which deposited at 30℃, 100℃, 200℃, 300℃, 400℃…………………………........107
Fig 4-4 The transmittance of ITO films which deposited at 30℃, 100℃, 200℃, 300℃, 400℃ and annealed at 300℃ for one hour using N2………………………………........................108
Fig 4-5 Illustration of Squre Thin Film.............................................109
Fig 4-6 Four-Point Probe...................................................................110
Fig 4-7 The resistivity of ITO films after annealing at 300℃, 1 hr in different conditions...............................................................111
Fig 4-8 SEM photographs of the surface of ITO films before annealing deposited at temperatures(a)30oC (b)100oC (c)200oC (d)300oC (e)400oC…………………………..……..……………....…112
Fig 4-9 SEM photographs of the surface of ITO films before annealing deposited at temperatures(a)30oC (b)100oC (c)200oC (d)300oC (e)400oC after annealing at 300 oC for 1 hr using N2……....113
Fig 4-10 XRD of patterns before annealing deposited at temperatures (a)30oC (b)100oC (c)200oC (d)300oC (e)400oC...……….…114
Fig 4-11 XRD of patterns after ammealing with N2 at 300 oC, 1 hr gas deposited at (a)30oC (b)100oC (c)200oC (d)300oC (e)400oC…………………………………………………...116
Fig 4-12 The EDS analysis of ITO films before annealing………….118
Fig 4-13 The EDS analysis of ITO films annealing at 300℃ for 1 hour using N2 gas…….………...……….………………..……..119
Fig 5-1 Illustration of pn junction...………………….………….....120
Fig 5-2 Energy band diagram for the avalanche process….…….....121
Fig 5-3 APD fabrication process……..……………..…………..….122
Fig 5-4 The structure of APD device…….……………….…….….124
Fig 5-5 The SEM cross section of ITO/n+/n/p/p+-Poly-Si0.82Ge0.18/ SiO2/Si substrate …………………………………….…….125
Fig 5-6 The Poly-Si0.82Ge0.18 films etching rate of the HNA etchant (27.5%HF：45%HNO3：H2O=2：2：1）in room temperature............................................................................126
Fig 5-7 Tektronix 577 current-voltage curve tracer……………..…127
Fig 5-8 The transmission of the grenn light filter.……………....…128
Fig 5-9 The I-V characteristics of the Poly-Si0.82Ge0.18 APD devices before annealing in different incident light power with green light band-pass filter…………………………..…………...129
Fig 5-10 The I-V characteristics of the Poly-Si0.82Ge0.18 APD devices annealing at 700℃ for 90 minutes in different incident light power with green light band-pass filter………………..…..130
Fig 5-11 The I-V characteristics of the Poly-Si0.82Ge0.18 APD devices annealing at 800℃ for 30 minutes in different incident light power with green light band-pass filter………………..…..131
Fig 5-12 The I-V characteristics of the Poly-Si0.82Ge0.18 APD devices annealing at 800℃ for 60 minutes in different incident light power with green light band-pass filter………………..…..132
Fig 5-13 The I-V characteristics of the Poly-Si0.82Ge0.18 APD devices in different annealing condition under incident light power 3.0μW with green light band-pass filter………......….……133
Fig 5-14 The responsivity of the Poly-Si0.82Ge0.18 APD devices before annealing in different incident light power with green light band-pass filter…………………………………...…….…134
Fig 5-15 The responsivity of the Poly-Si0.82Ge0.18 APD devices annealing at 700℃ for 90 minutes in different incident light power with green light band-pass filter………………....…135
Fig 5-16 The responsivity of the Poly-Si0.82Ge0.18 APD devices annealing at 800℃ for 30 minutes in different incident light power with green light band-pass filter………………....…136
Fig 5-17 The responsivity of the Poly-Si0.82Ge0.18 APD devices annealing at 800℃ for 60 minutes in different incident light power with green light band-pass filter………………....…137
Fig 5-18 The response coefficient curve of Poly-Si0.82Ge0.18 APD measured using green light filter at optical illumination of 3.0μW for different annealing conditions………...…..……138
Fig 5-19 The quantum efficiency of Poly-Si0.82Ge0.18 APD at different annealing conditions by using green light filter at optical illumination of 3.0μW…………………………….……..…139
Fig 5-20 The Gain Ratio of the Poly-Si0.82Ge0.18 APD devices before annealing in different incident light power with green light band-pass filter……………………………...…….……..…140
Fig 5-21 The relationship between Avalanche Multiplication Factor and VJ/VBR)………………………………………………..……141

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