臺灣博碩士論文加值系統

本論文開發了兩個有效卻簡單AFM奈米氧化技術。我們示範了鍍金對AFM奈米氧化的影響，驗證鍍金在矽基板上可以大大提升傳統AFM奈米氧化的效率達十倍的高度與效率。鍍金對AFM奈米氧化半絕緣InP基板，也有同樣的增強效果。進一步地，我們發現高阻值InP基板，可以很容易地氧化。更甚者，經由NaOH蝕刻處理，我們可以將氧化物移除，形成奈米尺度的凹槽。最後，我們發現，可以分析氧化物高度與凹槽的深度比值，推算氧化物可能的反應。 我們相信，本論文所開發的奈米氧化與奈米溝槽蝕刻技術，有潛力讓AFM氧化效率進一步提高進而降低氧化高阻值基板所需的偏壓，並擴大應用於AFM奈米氧化各種半導體基板，對未來將AFM微影術應用於實際奈米元件的製程有很重要的影響。

Two simple but effective methods for nano-oxidation using atomic force microscopy were reported. Firstly, we demonstrated the effect of gold coating on AFM local oxidation, which results show clearly that both the growth rate and height in AFM oxidation on silicon can be enhanced 10 times if proper thickness of the gold film was deposited on the substrate. A similar enhancement in AFM oxidation on semi-insulating InP substrate was also observed. Further, we found that AFM oxidation on the semi-insulating InP substrate can be easily carried out. Moreover, we demonstrated that the oxides thus formed can be removed to form nano-scaled trenches by dipping the substrate into NaOH solution. Finally, we show that by analyzing the oxide height and the trench depth, the possible chemical reaction in AFM oxidation can be evaluated. It is believed that the developed techniques, especially for the enhanced AFM oxidation and the nano-scaled trench fabrication, which could potentially be used to increase further the oxidation height and efficiency with reducing the required applied voltages for substrates with high resistivity and be applied to oxidize various kinds of semiconductor substrates, will play an important role in mass-production of nano-scaled devices in the future.

第一章 簡介 1
第二章 基本原理 4
2.1.　掃瞄探針顯微術 4
2.2.　原子力顯微鏡簡介 5
2.3.　原子力顯微鏡的基本原理 5
2.3 基本操作模式 7
2.2.1 接觸模式掃描(contact mode) 9
2.2.2非接觸模式掃描(non-contact mode) 10
2.2.3半接觸式原子力顯微術(semi-contact mode) 11
2.2.4 掃描電阻影像模式(spreading resistance imaging) 12
2.3 原子力顯微術奈米氧化 12
2.3.1原子力顯微術奈米氧化發展史 12
2.3.2原子力顯微術奈米氧化基本原理 14
2.3.3鍍金增強原子力顯微術奈米氧化物的基本原理 15
第三章 實驗方法與儀器 17
3.1實驗設計與研究方法 17
3.1.1鍍金對於使用AFM在矽基材上奈米氧化的影響 17
3.1.2 AFM氧化磷化銦基材後與以濕式化學蝕刻製作奈米溝槽 18
3.2原子力顯微鏡系統 20
3.2.1原子力顯微鏡的基本操作 22
3.2.1.1 探針的安裝 22
3.2.1.1.1探針的選擇 22
3.2.1.1.2 探針的安裝 24
3.2.1.1.3雷射的調整 24
3.2.1.2 操作模式設定 25
3.2.1.2.1 接觸式掃描設定 25
3.2.1.2.2 半接觸式掃描設定 28
3.2.1.2.3掃膜電阻模式設定 30
3.2.1.2.4微影模式設定 31
3.3濺鍍系統 34
第四章 實驗結果與討論 37
4.1鍍金對於AFM奈米氧化矽基板的影響 37
4.1.1金膜厚度對AFM奈米氧化的影響 37
4.1.2氧化物的驗證 39
4.1.3所加偏壓與金膜厚度對氧化物高度的影響 42
4.1.3.1所加偏壓對氧化物高度的影響 42
4.1.3.2金膜厚度對氧化物高度的影響 42
4.2 AFM氧化磷化銦基板後以濕式化學蝕刻製作奈米溝槽 47
4.2.1 使用AFM在磷化銦基板上製作不同的氧化圖形 47
4.2.2 比較不同偏壓對InP氧化物成長的影響 50
4.2.3 使用掃描式電阻顯微鏡模式觀測氧化物的阻抗 52
4.2.4 InP奈米溝槽的製作 54
4.2.5 推測AFM奈米氧化物的可能成分 56
第五章 結論 70

[1] P.L. Packman, Science, 285,2079 (1999)).
F. S. S. Chien, J. W. Chang, S. W. Lin, Y. C. Chou,T. T.
[2].Chen, S. Gwo, T. S. Chao, and W. F. Hsieh, Appl. Phys. Lett. 76, 3(2000).
[3]M. Ara, H. Graaf, and H. Tada, Appl. Phys. Lett. 80, 14 (2002).
[4] X. N. Xie, H. J. Chung, C. H. Sow, and A. T. S. Wee, Appl. Phys. Lett. 84, 4914 (2004).
[5] R. W. Li, T. Kanki, M. Hirooka, A. Takagi, and T. Matsumoto, Appl. Phys. Lett. 84, 14 (2004).
[6] E. S. Snow, P. M. Campbell, F. A. Buot, D. Park, C. R. K. Marrian, and R. Magno, Appl. Phys. Lett. 72, 3071 (1998).
[7] R. Garcia, M. Calleja, and H. Rohrer, J. Appl. Phys. 86, 1898 (1999).
[8] E. B. Cooper, S. R. Manalis, H. Fang, H. Dai, K. Matsumoto, S. C. Minne, T. Hunt, and C. F. Quate, Appl. Phys. Lett. 75, 3566 (1999).
[9] K. Matsumoto, Y. Gotoh, T. Maeda, J. A. Dagata, and J. S. Harris, Appl. Phys. Lett. 76, 239 (2000).
[10] V. Bouchiat, M. Faucher, C. Thirion, W. Wernsdorfer, T. Fournier, and B. Pannetier, Appl. Phys. Lett. 79, 123 (2001).
[11] L. Pellegrino, I. Pallecchi, D. Marre´, E. Bellingeri, and A. S. Siri, Appl. Phys. Lett. 81, 3849 (2002).
[12] A. Dorn, M. Sigrist, A. Fuhrer, T. Ihn, T. Heinzel, K. Ensslin, W. Wegscheider, and M. Bichler, Appl. Phys. Lett. 80, 252 (2002).
[13] J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, Appl. Phys. Lett. 56, 2001 (1990).
[14] T. Yukiya, K. Aizawa, C. Fujihashi, J. J. Appl. Phys. 43,1660 (2004),
[15] Y. Okada, Y. Iuchi, M. Kawabe, J. S. Harris, Jr., J. Appl. Phys. 88, 1136 (2000).
[16] M. S. Hagedom, D. D. Litfin, G. M. Price, A. E. Gordon and T. K. Higman, J. Vac. Sci. Technol. B 14, 4153 (1996).
[17] E. S. Snow and P. M. Campbell, Science 250, 1639 (1995).
[18] H. Sugimura, T. Uchida, N. Kitamura and H. Masuhara, Appl. Phys. Lett. 63, 1288 (1993).
[19] K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian and J. S. Harris, Appl. Phys. Lett. 68, 34 (1996).
[20] Y. R. Ma, C. Yu, Y. D. Yao, Y. Liou, and S. F. Lee, Phys. Rev. B 64, 195324 (2001).
[21] R. W. Li, T. Kanki, H. A. Tohyama, J. Zhang, H. Tanaka, A. Takagi, T. Matsumoto, and T. Kawai, J. Appl. Phys. 95, 7091 (2004).
[22] I. Song, B. M. Kim and G. Park, Appl. Phys. Lett. 76, 601 (2000).
[23] P. M. Campbell, E. S. Snow, and P. J. McMarr, Appl. Phys. Lett. 66, 1388 (1995).
[24] I. Pallecchi, L. Pellegrino, E. Bellingeri, A. S. Siri, and D. Marre, J. Appl. Phys. 95, 8079 (2004).
[25] M. Tello, and R. Garcia, Appl. Phys. Lett. 83, 2339 (2003).
[26] E. Tranvouez, M. Gendry, P. Regreny,and G. Bremond, Superlattices and Microstructures 36,325-333 (2004)
[27] T. Djenizian, G.I. Sproule, S. Moisa, D. Landheer, X. Wu, L. Santinacci, P. Schmuki, and M. J. Graham, Electrochimica Acta 47,2733 (2002)
[28] G. Binnig, H. Rohrer, Ch. Gerber, E. Weibel, Phys. Rev. Lett., 49, 57. (1982)
[29] Binning, G., C. F. Quate, and C. Gerber. Phys. Rev. Lett. 56,930 (1986)
[30] Solver P47H SPM Instruction Manual
[31] M. Ringger ,H. R. Hidder ,R. Schlogel ,P. Oelhafan ,H. J. Gntherodt ,Appl. Phys. Lett. 46, 832 (1985)
[32] H. Van Kempen , G. F. A. van de Walle , IBM. J. Res. Dev. 30 ,509 (1986)
[33] R. S. Becher ,J. A. Golovchenko etal. Nature 325, 419 (1987)
[34] T. R. Albrecht, M. M. Dovek, C.A. Lang, C. F. Quate, and D. P. E. Smith, Appl. Phys. Lett. 55, 1727 (1989)
[35] Phaedon Avouris,Tobias Hertel, and Richard Martel, Appl. Phys. Lett., 71,2 (1997)
[36] Liming Tsau, Dawen Wang, K.L.Wang, Appl. Phys. Lett., 64, 2133. (1994)
[37] E.S.Snow, P.M.Campbell, Appl. Phys. Lett., 64,1932. (1994)
[38] Dawen Wang, Liming Tsau, K.L.Wang, Appl. Phys. Lett., 67, 1295. (1995)
[39] A. E. Gordon, R. T. Fayfield, D. D. Litfin and T. K. Higman, J. Vac. Sci. Technol. B 13, 2805, (1995).
[40] Discoved by M. W. Lomonossow and A. L. Lavoisier.
[41] J. J. McLaren, A. Nelson, K. Geib, R. Gann and C. W. Wilmsen, J. Vac. Sci. Technol. A1, 1486 (1983).