臺灣博碩士論文加值系統

綜合而言，本研究成功地使用有機金屬氣相沉積法，以金做為觸媒成長出一維的InN奈米尖錐。我們除探討不同的製程溫度、壓力與氣體流量，對InN奈米結構形貌的影響外；進一步並量測奈米尖錐與奈米帶、奈米線、以及GaN包覆InN奈米線的光學性質。
電子顯微鏡觀察顯示InN奈米尖錐為單晶六面體結構，且直徑分佈大約在100∼200 nm之間，長度可達1~3 μm。InN奈米尖錐的紅外光發光(IR-PL)光譜顯現了一個在0.776 eV強度不隨溫度升高而降低的PL峰值，應為近能帶邊緣放光(near band edge emission)。對比之下，另一組InN奈米線樣本的IR-PL觀察中，我們發現隨著雷射強度提高，奈米線容易損毀；但當外包GaN之後，其抗損毀能力明顯提高。此外，我們在奈米尖錐以及奈米帶的InN發現有明顯的放大自發放光(ASE, amplified spontaneous emission)以及雷射(lasing)的現象。不過在奈米線樣本中我們並未觀察到該等現象，有可能是因為奈米線較細散射截面較小所致。經由仔細的探討，我們認為所觀察到的雷射放光極有可能是來自隨機雷射(Random Lasing)的現象，而此種現象在InN中是首次的發現。

For the first time, one dimensional InN nano-tips were fabricated with gold as the catalyst using metal organic chemical vapor deposition. The morphology dependence of nano-tips on substrate temperature, pressure, and gas flow rate was investigated; further, the infrared photoluminescence (IR-PL) spectra of InN nanotips as well as nanobelts, nanowires, and nanowires encapsulated by GaN were measured.
Observed through scanning electron microscopy (SEM), the single crystalline InN nanotip was revealed to be a tapered hexagon with 100~200nm in diameter and 1~3um in length. The IRPL showed a peak centered at 0.776eV, in which intensity is nearly temperature independent and could be attribute to the near band edge emission in InN. In contrast, the IR-PL spectrum of InN nanowires is susceptible to damage under high power laser; However, as the nanowire was encapsulated with GaN, the damaging threshold of nanowires can be greatly improved. Moreover, apparent amplified spontaneous emission and lasing phenomenon were observed both on InN nanotips and nanobelts, which behavior has however not observed in nanowires. A possible reason is due to the extremely thin diameter, which has lower laser scattering cross section. After carefully examination, the observed lasing phenomenon is very likely due to the random lasing mechanism, which was firstly observed in InN.

誌謝 I
摘要 III
Abstract IV
目錄 V
圖目錄 VIII
表格目錄 XI
第一章 序論 1
第二章 氮化銦半導體基本性質 4
2-1 氮化銦材料結構與基本性質 4
2-2 InN的能隙問題 5
第三章 實驗方法與設備 10
3-1 實驗方法與步驟 10
3-1-1奈米結構成長流程圖 11
3-1-2奈米結構成長條件 14
3-2 製程設備 15
3-2-1 有機金屬氣相沉積系統 15
3-2-2直流濺鍍機介紹( DC sputtering ) 19
3-3 分析與量測儀器 19
3-3-1 X光繞射儀( XRD ) 19
3-3-2掃瞄式電子顯微鏡( SEM ) 20
3-3-3 X光能譜分析儀( EDX ) 21
3-3-4穿透式電子顯微鏡( TEM ) 21
3-3-5顯微拉曼光譜分析儀( Micro-Raman Spectrumeter ) 22
3-3-6光激發螢光光譜儀( Photoluminescence ) 23
第四章 實驗結果與討論 26
4-1 製程參數對奈米結構形貌的影響 26
4-1-1 TMIn流量變化效應 26
4-1-2 氨氣流量變化效應 32
4-1-3成長壓力變化效應 34
4-1-4 成長溫度變化效應 36
4-2 InN奈米尖錐之成分與結構分析 39
4-3 InN奈米結構光學性質分析 42
4-3-1 奈米尖錐 42
4-3-2奈米帶 44
4-3-3 InN奈米線與Core-Shell InN奈米線@GaN 45
4-3 紅外線光激發螢光光譜的討論 57
4-3-1 Phonon Replica 57
4-3-2 Fabry Perot Resonator 60
4-3-3 Whispering Gallery Modes 62
4-3-3 Random Lasing 66
第五章 結論 72
參考文獻 73

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