|
D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp:“The electronic structure at the atomic scale of ultrathin gate oxides”,Nature. Vol. 399 No. 24 June 1999。 Takumi Ohtomo, Tadahiro Kawasaki, and Yoshizo Takai:“Atomic level characterization of ultrathin flat cobalt disilicide film with three crystalline domains”,J. Appl. Phys. Vol. 91 No. 12 June 2002。 S. Drosd, and J. A. Washburn:“A new technique for observing the amorphous to crystalline transformation in thin surface layers on silicon wafers”,J. Appl. Phys. 51, 4106, 1980。 S. Iijima,J. Appl. Phys. 26, 365, 1987。 P. Müllner, P. Pirouz:“A disclination model for the twin-twin intersection and the formation of diamond-hexagonal silicon and germanium”,Materials Science and Engineering A233, 1997, p.139-144。 N. Bozzolo, S. Barrat, I. Dieguez, E. Bauer-Grosse:“Spatial distribution of stacking faults and microtwins in isolated crystals and textured diamond films”,Diamond and Trlated Materials 5, 1996, p.1532-1535。 Yaogang Zhang, Hideki Ichinose, Megumi Nakanose, Kunio Ito and Yoichi Ishida:“Structure midelling of Σ3 and Σ9 coincident boundaries in CVD diamond thin films”,Journal of Electron Microscopy 48(3), 1999, p.245-251。 J. Thibault, J. L. Rouviere, and A. Bourret,Materials Science and Technology (VCH, Weinheim, 1991)。 Fernando A. Ponce:“Fault-free silicon at the silicon/sapphire interface”,Appl. Phys. Lett. 41, 371, 1982。 F. A. Ponce, and J. Aranovich,Appl. Phys. Lett. 38, 439, 1981。 Z. J. Zhang, K. Narumi, H. Naramoto, S. Yamamoto, and A. Miyashita:“X-ray characterization of _-SiC growth and structural modification of Si by MeV ion implantation”,J. Phys. :Condens. Matter 10, 1998。 Shu. Miao, Jing. Zhu, Xiaowen. Zhang, and Z. Y. Cheng.:“Electron diffraction and HREM study of a short-range ordered structure in the relaxor ferroelectric Pb(Mg1/3Nb2/3)O3”,Physical Review B, Volume 65, 052101, 2001。 Jin Hyeok Kim, Jeong Yong Lee:“High-resolution transmission electron microscopy study of pulsed laser beam crystallized Si thin film: the formation of hexagonal Si and defects”,Thin Solid Films 292, 1997, p.313-317。 S. Delclos, D. Dorignac, F. Phillipp, F. Silva, A. Gicquel:“Ultra-high resolution electron microscopy of defects in the CVD diamond structure”,Diamond and Related Materials 7, 1998, P.222-227。 S. Delclos, D. Dorignac, F. Phillipp, S. Moulin, A. M. Bonnot:“UHREM investigation of stacking fault interactions in the CVD diamond structure”,Diamond and Related Materials 8, 1999, p.682-687。 Fernando A. Ponce and Julio Aranovich:“Imaging of the silicon on sapphire interface by high-resolution transmission electron microscopy”,Appl. Phys. Lett. 38(6), 15 March, 1981。 Shigeo Arai, Susumu Tsukimoto and Hiroyasu Saka:“In situ HREM observation of nucleation and growth of nanotwins beneath the solid-liquid interface in Si”,Journal of Electron Microscopy 52(1):79-84, 2003。 R. J. Matyi, D. L. Chapek, D. P. Brunco, S. B. Felch, B. S. Lee:“Boron doping of silicon by plasma source ion implantation”,Surface and Coatings Technology 93, 1997, p.247-253。 陳力俊 主編:“微電子材料與製程Microelectronics Materials and Processing”,中國材料科學學會。 M. J. P. Hopstaken, Y. Tamminga, M. A. Verheijen, R. Duffy, V. V. Venezia, A. Heringa:“Effects of crystalline regrowth on dopant profiles in preamorphized silicon”,Applied Surface Science 231-232, 2004, p.688-692。 Lourdes Pelaz, Luis A. Marqués, María Aboy, George Gilmer, Luis A. Balón, Juan Barbolla:“Monte Carlo modeling of amorphization resulting from ion implantation in Si”,Computational Materials Science 27, 2003, 1-5。 M. Sayed, J. H. Jefferson, A. B. Walker, A. G. Cullis:“Molecular dynamics simulations of implantation damage and recovery in semiconductors”,Nuclear Instrument and Methods in Physics Research B, 102, 1995, p.218-222。 Hua Li, Xin-Dong Peng, Nai-Ben Ming:“Comparison among the growth mechanisms of stacking fault, twin lamella and screw dislocation: a Monte Carlo simulation”,Journal of Crystal Growth 149, 1995, p.241-245。 F. J. Humphreys and M. Hatherly:“Recrystallization and Related Annealing Phenomena”,Pergamon 1995。 Robert E. Reed-Hill and Reza Abbaschian:“Physical Metallurgy Principles”,PWS publishing company。 P. Revesz, M. Wittmer, J. Roth, and J. W. Mayer:“Epitaxial regrowth of Ar-implanted amorphous silicon”,J. Appl. Phys. 49(10), October 1978。 M. Wittmer, J. Roth, P. Revesz, and J. W. Mayer:“Epitaxial regrowth of Ne- and Kr-implanted amorphous silicon”,J. Appl. Phys. 49(10), October 1978。 L. Csepregi, E. F. Kennedy, and J. W. Mayer, T. W. Sigmon:“Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si”,J. Appl. Phys. 49(7) July 1978。 L. Csepregi, E. F. Kennedy, T. J. Gallaher, and J. W. Mayer, T. W. Sigmon:“Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions”,J. Appl. Phys. Vol. 48, No. 10, October 1977。 E. F. Kennedy, L. Csepregi, and J. W. Mayer, T. W. Sigmon:“Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layers”,J. Appl. Phys. Vol. 48, No. 10, October 1977。 M. Bauer, M. Oehme, M. Sauter, G. Eifler, E. Kasper:“Time resolved reflectivity measurements of silicon solid phase epitaxial regrowth”,Thin Solid Films 000, 2000, p.228-232。 Yu Gyun Shin, Jeong Yong Lee, Moon Han Park, Ho Kyu Kang:“Effects of stress on solid-phase epitaxial regrowth and corner defect generation in As+-implanted, two-dimensional amorphized Si”,Journal of crystal Growth 231, 2001, p.107-114。 J.J. Yang, L. J. Chen:“High resolution transmission electron microscope study of solid phase epitaxial growth of very high dose, low energy P+ implanted (001)Si”,Nuclear Instruments and Methods in Physics Research B 121, 1997, p.195-198。 Katsuhiro Uesugi, Takuji Komura, Masamichi Yoshimura, Takafumi Yao:“Scanning tunneling microscopy study of solid-phase epitaxy processes of amorphous silicon layers on silicon substrates”,Applied Surface Science 82/83, 1994, p.367-373。 Akira Nakamura, Fumiaki Emoto, Eiji Fujii, Atsuya Yamamoto, Yasuhiro Uemoto, Kohji Senda, and Gota Kano:“Analysis of solid phase crystallization in amorphized polycrystalline Si films on quartz substrates”,J. Appl. Phys. 66(9), 1 November, 1989。 J. Lindhard, M. Scharff and H.E. Schiott, Mat. Fys. Medd. Dan. Vid. Selsk, 33, 14(1963)。 W.K. Hofker, Philips Res. Repts. Suppl. No. 8 (1975)。 陳力俊等著:“材料電子顯微鏡學”,行政院國家科學委員會精密儀器發展中心。 G.L. Olson, J.A. Roth, Mater. Sci. Rep. 3 (1998) 1.。 J.P.Mccaffrey and J.Hulse:“ Transmitted Color and Interference Fringes for TEM Sample Preparation of Silicon”,Micron Vol.29 No.2/3 (1998) pp.139-144,。 K. Watanabe, Y. Anzai, N. Nakanishi, T. Yamazaki, K. Kuramochi, K. Mitsuishi, K. Furuya, I. Hashimoto:“Microstructures Formed in Recrystallized Si”Appl. Physics Letters, volume 84, no. 22 (2004)。 D. A. Porter and K. E. Easterling:“Phase Transformation in Metals and Alloys”,Ch.4, P.202,Reprinted in 2001 by Nelson Thornes Ltd。 Yu Gyun Shin,Jeong Yong Lee,Moon Han Park,Ho Kyu Kang:“ Effect of Stress on Solid-phase Epitaxial Regrowth and Corner Defect Generation in As+-implanted,Two-dimensional Amorphized Si”,Journal of Crystal Growth 231 (2001) 107-114。 David J.Smith and L.A.Freeman,R.A.McMahon and H.Ahmed,M.G.Pitt and T.B.Peters:“Characterization of Si-Implanted and Electron-beam-annealed Silicon-on-saphire Using High-resolution Electron Microscopy”,J.Appl.Phys.56(8),15 October 1984。 Shigeo Arai,Susumu Tsukimoto and Hiroyasu Saka:“In Situ HREM Observation of Nucleation and Growth of Nanotwins Beneath the Solid-liquid Interface in Si”,Journal of Electron Microscopy 52(1) 2003 p.79-84。 F.Harbsmeier,W.Bolse,M.R.da Silva,M.F.da Silva,J.C.Soares :“Epitaxial Regrowth of C- and N-Implanted Silicon and α-Quartz”,Nuclear Instruments and Methods in Physics Research B 136-138 (1998) 263-267。 A. G. Cullis, T. E. Seidel and R. L. Meek:“Comparative Study of Annealed Neon-, Argon-, and Krypton-ion Implantation Damage in Silicon”,J.Appl. Phys. 49(10), October 1978。 David B. Williams, and C. Barry Carter:“Transmission Electron Microscopy”,Plenum Publishing Corporation 233 Spring Street, New York。
|