[1] Ashraful Ghani Bhuiyan, Akihiro Hashimoto, and Akio Yamamoto, J. Appl. Phys.,82, 2779 (2003)
[2] O. Ambacher, et. al., J. Vac. Sci. Technol. B14(6) 3532 (1996)
[3] Q. Guo, O. Kato, and A. Yoshida, J. Appl. Phys. 73(11), 7969 (1993)
[4] V. W. L. Chin, T. L. Tansley, and T. Osotchan, J. Appl. Phys. 75, 7365 (1994)
[5] F. Bechstedt, J. Furthmüller, J. Crystal Growth, 246, 315 (2002)
[6] J. Wu, W. Walukiewicz, K.M. Yu, J.E. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y.
Saito, Y. Nanishi, Appl. Phys. Lett., 80, 3967 (2002).
[7] T. Matsuoka, H. Okamoto, N. Nakao, H. Harima, E. Kurimoto, Appl. Phys. Lett.,81,1246 (2002).
[8] V.Y. Davydov, A.A. Klochikhin, R.P. Seishan, V.V. Emtsev, S.V. Ivanov, F.
Bechstedt, J. Furthmuller, H. Harima, A.V. Mudryi, Phys. Stat. Sol.B,229,R1 (2002)
[9] A. Yamamoto, M. Tsujino, M. Ohkubo, A. Hashimoto, J. Crystal Growth, 137, 415 (1994)
[10] A. Yamamoto, M. Tsujino, M. Ohkubo, A. Hashimoto, Sol. Energy Mater. Sol. Cells, 35, 53(1994)
[11] T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986)
[12] Q. Guo, N. Shingai, M. Nishio, and H. Ogawa, J. Crystal Growth, 189/190, 466, (1998)
[13] Motlan, E. M. Goldys, T. L. Tansley, J. Crystal Growth, 241, 165 (2002)
[14] Q. Guo, N. Shingai, Y. Mitsushi, M. Nishio, and H. Ogawa, Thin solid Films,343/344, 524 (1999)
[15] N. Saito, Y. Igasaki, Appl. Surface Sci., 169/170, 349 (2001)
[16] Tokuo Yodoa, Yasunobu Kitayamaa, Kazunari Miyakia, Hiroaki Yonaa,Yoshiyuki Haradab, Kathryn E. Princec, K. Scottd, A. Butcher, J. Crystal Growth, 269,145-154 (2004)
[17] M. Nicolet, J. Geophys. Res., 64, 2092 (1959)
[18] P.F. Knewstubb, A.W. Tickner, J. Chem. Phys., 37, 2941 (1962)
[19] V. V. Mamutin, V. A. Vekshin, V. Y. Davydov, V. V. Ratnikov, Y. A.Kudriavtsev,B. Y. Ber, V. V. Emtsev, and S. V. Ivanov, Phys. Status Solidi A, 176,373 (1999).
[20] H. Lu,W. J. Schaff, J. Hwang, and L. F. Eastman, Mater. Res. Soc. Symp. Proc. 680E, E3.2 (2001).
[21] Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur, “Properties of advanced semiconductor materials GaN, AlN, InN, BN, SiC, SiGe”,. 49-66, (2001)
[22] Benedicte Maleyre, Olivier Briot, Sandra Ruffenach, J. of Crystal Growth, 269, 15-21 (2004)
[23] Masahito Kurouchi, Hiroyuki Naoi, Tsutomu Araki, Tayajima and Yasushi Nanishi,Japan J. Appl. Phys. 44, L230-L232 (2005)
[24]A. Yamamoto, M. Tsujino, M. Ohkubo, and A. Hashimoto, J. of Crystal Growth,137, 415 (1994)
[25]Q. Guo, K. Murata, M. Nishio, H. Ogawa, Appl. Surface Sci. 169/170, 340 (1999)
[26]Q. Guo, A. Okada, H. Kidera, T. Tanaka, M. Nishio, H. Ogawa, J. Crystal
Growth,237/239, 1032 (2002)
[27]H. Lu et al., 44th Electronic Material Conference, J. Elec.Mater., (2002)
[28]S. N. Mohammad and H. Morkoc, Prog. Quantum Electron 20, 361 (1996)
[29]Lung-Chien Chen and Hung-Chang Chen,O.P.T., PA-SA1-60 (2004)
[30]Lung-Chien Chen and Hung-Chang Chen, Japan J. Appl. Phys. 44, 2995 (2005)
[31]T. Yodo, H. Yona, D. Nosei, and Y. Harada, Appl. Phys. Lett. 80, 968 (2002)
[32]Gabriela .B. Gonzalez, Jerome B. Cohen, Jin-Ha Hwang, Thomas O. Mason,Journal of Applied Physics 89, 2550-2555, (2001)
[33]C.H. Lee, C. S. Huang, Materals Science and Engineering B22, 233-240, (1994)
[34]Z.B. Zhou, R.Q. Cui, Q.J. Pang, Y.D. Wang, F.Y. Meng, T.T. Sun, Z.M. Ding,X.B.Yu, Applied Surface science 172, 254-252, (2001).
[35]T.Minami, T. Kakumu, Y. Takeda, S. Takada, Thin Solid films 290/291, 1-5, (1996)
[36]T. Ratcheva, M. Namova, Thin Solid films 202, 243, (1991)
[37]E. Benamar, M. Rami, C. Messaoudi, D. Sayah, A. Ennaoui, Solar Energy Materials and Solar Cells 56, 125-139 (1999)
[38]H. bisht, H.T. Eun, a. Mehrtens, M.A. Aegerter, Thin Solid films 351, 109-114,(1999)
[39]Hiroshi HARA, Takashi SHIRO and Toshiaki YATABE, Japanese J. Applied Physics ,43 ,2, 745–749, (2004)
[40] Brian Chapman, Glow Discharge Processes, WILE INTER-SCIENCE, Canada (1980)
[41]翁睿哲,以射頻磁控濺鍍氮化鉭薄膜製程條件對顯微結構及電性影響研究,國立成功大學材料科學與工程學系,碩士論文。(2001)[42]D. L. Smith, THIN-FILM DEPOSITION, McGraw-Hill, North American., (1995)
[43]K. Wasa and S. Hayakawa, Handbook of Sputter Deposition Technology, Noyes pub, (1992)
[44]劉博文,ULSI 製程技術,初版,文京出版社發行,2001。
[45]莊達人,VLSI 製程技術,二版,高立圖書有限公司發行,2002。
[46]盧軒儀,基材種類及化學成份對使用非反應性濺鍍法常溫成長氮化鋁薄膜之影
響,國立中山大學材料科學研究所,碩士論文,(2002)
[47]M. Ohring, , The Materials Science of Thin Films, Academic Press, London.,(1992)
[48]汪建民,材料分析,中國材料科學學會,(1998)
[49]Dieter K. Schroder, Semiconductor Material and Device Characterization, 2nded.,JohnWiley and Sons, Inc. (1998)
[50] Donald A. Neamen, Semiconductor Physics and Devices, 3rd ed.McGraw-Hill,Inc. (2003)
[51] L. J. Van der Pauw, Philips Technical Review, 20, 220-224 (1958)
[52] Qixin Guo, Nobuhiro Shingai, Mitsuhiro Nishio and Hiroshi Ogawa, J Crystal Groeth, 189, 466, (1998)
[53] 周道煒, 以射頻反應式磁控濺鍍法於藍寶石基板成長氮化銦薄膜及其相關性質之研究, 碩士論文,(2004)[54] M. Yoshimoto, H. Yamamoto, W. Huang, H. Harima, J. Saraie, A. Chayahara, Y.Horino, Appl. Phys. Lett. 83, 3480, (2003)
[55] T. Yodo, Y. Kitayama, K. Miyaki, H. Yona, Y. Harada, K. E. Prince, K. Scott, A.Butcher, J. Cryst. Growth 269, 145, (2004)
[56] J. Wu, W. Walukiewicz, S. X. Li, R. Armitage, J. C. Ho, E. R. Weber, E. E. Haller,H. Lu, W. J. Schaff, A. Barcz, R. Jakiela, Appl. Phys. Lett., 84, 2805, (2004)
[57] D. Mergel, Z. Qiao, J. Phys. D 35, 794, (2002)