臺灣博碩士論文加值系統

在本論文裡，藉著考慮源-汲極寄生電阻分析的方法來研究MOSFET直流特性。我們以DRAM電路設計中所用的MOS元件實驗數據及TCAD模擬結果來驗証我們理論推導計算的準確性。研究上發現在線性區，源極及汲極電阻會同時導致汲極電流減少；但在飽和區，只有源極電阻會導致汲極電流減少。此外，由於通道長度和氧化層厚度的減少，會增加源-汲極電阻對汲極電流差額量的影響。
同時在本論文裡也提出一個演算法用來萃取MOSFET中的有效通道長度及源-汲極寄生電阻。研究上發現在LDD MOS元件中，有效通道長度及源-汲極寄生電阻和閘極電壓間有相互關係；隨著閘極電壓增加，有效通道長度會增加，源-汲極寄生電阻值會降低。除此之外，從實驗結果得知有效通道長度有溫度的的效應；當溫度降低時，有效通道長度會增加。

In this thesis, the DC characteristics of MOSFETs are investigated by means of an analytical approach with considerations of the source-drain parasitic resistance. Experimental data of MOS devices for DRAM design and results of TCAD simulation are used to verify the accuracy of theoretical calculation. It is found that both the source and drain resistances can induce a large reduction in the drain current in the linear region, but only the source resistance can cause a large reduction in the drain current in the saturation region. Moreover, the drain current deduction due to the source-drain resistance increases with decreasing channel length and oxide thickness.
In addition, a measurement algorithm to extract the effective channel length and the drain-source parasitic resistance of MOSFET’s is presented in this thesis. It is shown that the effective channel length and the drain-source parasitic resistance of an LDD MOS device are gate-voltage dependent. The effective channel length increases and the source-drain parasitic resistance decreases with raising gate voltage. Besides, the effective channel length is temperature dependent from the experimental results. As the temperature lowers, the effective channel length increases.

Chinese Abstract…………………………………………… i
English Abstract…………………………………………… ii
Acknowledgement………………………………………… iii
Content…………………………………………………… iv
Table Caption……………………………………………… vi
Figure Caption…………………………………………… vii
List of Symbol…………………………………………… ix
Chapter1 Introduction…………………………………… 1
Chapter2 Physical Model for Drain Current………… 3
2-1 Threshold Voltage Model………………………… 3
2-2 Drain Current Model……………………………… 6
2-3 Result and Discussion……………………………… 12
Chapter3 Parameters Extraction………………………… 25
3-1 Extraction Algorithm……………………………… 26
3-2 Experimental Result and Discussion……………… 30
3-2-1 Gate Voltage Dependent……………………… 30
3-2-2 Temperature Effect of DL and Mobility……… 35
Chapter4 Conclusion……………………………………… 45
Reference………………………………………………… 46
Autobiography…………………………………………… 49

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