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研究生:楊宏熙
研究生(外文):Hung-Hsi Yang
論文名稱:二氧化鈦薄膜之延伸式閘極場效電晶體特性分析與應用於微機電系統技術之研究
論文名稱(外文):Study of Micro-Electro-Mechanical Systems Technique Based on Titanium Oxide Thin Film for Extended Gate Field Effect Transistor
指導教授:周榮泉周榮泉引用關係
指導教授(外文):Jung-Chuan Chou
學位類別:碩士
校院名稱:國立雲林科技大學
系所名稱:電子與資訊工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2005
畢業學年度:93
語文別:中文
論文頁數:263
中文關鍵詞:延伸式閘極場效電晶體遲滯效應緩衝層微機電系統二氧化鈦時漂效應溫度效應
外文關鍵詞:Titanium oxideMicro-electro-mechanical systemsExtended gate field effect transistorBuffer layerDrift effectHysteresis effectTemperature effect
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本論文之研究主要係針對延伸式閘極場效電晶體(Extended Gate Field Effect
Transistor, EGFET)之酸鹼感測元件為主體,本論文由四個主題構成。第一主題係
二氧化鈦(Titanium Oxide, TiO2) 感測薄膜之備製, 其感測元件之架構係
TiO2/Si-Substrate,藉此得知最佳化氬氣(Ar)與氧氣(O2)流量比及濺鍍壓力,並利
用各種儀器分析二氧化鈦薄膜之特性。第二主題係於TiO2/Si-Substrate 之感測架
構間,加入一緩衝層(Buffer Layer)薄膜,探討因不同緩衝層薄膜沈積之二氧化鈦其感測特性的差異。第三主題係介紹本論文設計之源極隨耦器(Source Follower)讀出電路,且利用後製程(Post Process)沈積二氧化鈦薄膜,探討其應用於微機電系統(Micro-Electro-Mechanical Systems, MEMS)之可行性。第四主題係針對最佳感測架構與製程參數之二氧化鈦感測元件,量測其非理想效應(Nonideal Effects)包括溫度(Temperature)、時漂(Drift)及遲滯(Hysteresis)等效應,並與期刊論文比較。總言之,本論文由半導體製程沈積TiO2 薄膜,且尋找最佳化製程參數及感測結構,藉由量測儀器分析二氧化鈦薄膜特性,並提及源極隨耦器讀出電路結合後沈積處理,探討其應用於微機電系統之趨勢。
In this thesis, it emphasizes on the study of the extended gate field effect transistor (EGFET). The full text can be divided into four topics. In the first topic, it was used the sputtering method to prepare the titanium oxide (TiO2) thin film, and the structure of sensing device was TiO2/Si-Substrate. The optimal results of argon to oxygen ratio and work pressure can be obtained, and exploit the instruments to analyze the TiO2 properties. In the second topic, the buffer layer was inserted between the structures of TiO2 and Si-Substrate, and the difference of TiO2 sensing properties with different buffer layers would be discussed. In the third topic, the designed source follower readout circuit in this thesis was introduced. It exploited the post process to deposit the TiO2 membrane, and discussed the feasibility applied to the micro-electro-mechanical systems (MEMS). In the fourth topic, it emphasized the optimal sensing structure and process parameters of TiO2 sensing device. The nonideal effects of temperature, drift, and hysteresis effects can be measured, and compared with the journal papers. In conclusion, the TiO2 membrane was deposited with semiconductor process, and looked for the optimal process parameters and sensing structure. The TiO2 thin film properties were measured by instruments, and the source follower circuit was combined with post process. Furthermore, the direction of MEMS application would be discussed.
中文摘要………………………………………………………………………………I
英文摘要……………………………………………………………………………II
誌謝…………………………………………………………………………………III
目錄…………………………………………………………………………………IV
表目錄……………………………………………………………………………VIII
圖目錄………………………………………………………………………………IX
第一章緒論
1.1 研究背景…………………………………………………………………………1
1.2 研究動機…………………………………………………………………………2
1.3 研究流程及架構…………………………………………………………………3
第二章文獻回顧與理論分析
2.1 二氧化鈦感測薄膜之選擇與製程………………………………………………8
2.1.1 二氧化鈦薄膜之形態(Morphology)…………………………………………9
2.1.2 二氧化鈦薄膜製程……………………………………………………………10
2.2 延伸式閘極場效電晶體………………………………………………………10
2.2.1 吸附鍵結模型(Site-Binding Model)…………………………………………11
2.2.2 延伸式閘極場效電晶體之工作原理…………………………………………14
2.3 參考電極………………………………………………………………………15
2.4 二氧化鈦介紹…………………………………………………………………16
2.4.1 二氧化鈦之性質………………………………………………………………16
2.4.2 二氧化鈦之備製………………………………………………………………17
2.4.3 二氧化鈦專利件數分析………………………………………………………17
2.4.4 奈米TiO2 專利之應用介紹…………………………………………………19
第三章二氧化鈦實驗步驟、方法與量測
3.1 二氧化鈦感測膜之備製………………………………………………………37
3.1.1 濺鍍之前處理…………………………………………………………………37
3.1.2 反應性濺鍍二氧化鈦薄膜製程………………………………………………37
3.1.3 二氧化鈦之製程參數…………………………………………………………38
3.1.4 TiO2 EGFET 元件之備製……………………………………………………38
3.2 薄膜表面分析原理與特性量測系統…………………………………………39
3.2.1 薄膜成分分析…………………………………………………………………39
3.2.2 薄膜表面微觀結構……………………………………………………………41
3.2.3 薄膜厚度與片電阻……………………………………………………………42
3.2.4 薄膜特性量測系統與電路……………………………………………………43
3.2.5 量測儀器之型號………………………………………………………………44
3.3 二氧化鈦感測元件之感測度探討……………………………………………44
3.3.1 感測度定義及量測……………………………………………………………44
3.3.2 製程參數、退火條件及感測度分析…………………………………………45
3.4 製程參數對二氧化鈦薄膜性質之影響………………………………………46
3.4.1 SIMS 之薄膜成份分析………………………………………………………46
3.4.2 FTIR 之薄膜成份分析………………………………………………………47
3.4.3 SEM、EDS 之表面形態、元素成份分析……………………………………47
3.4.4 ESCA 之薄膜成份分析………………………………………………………48
3.4.5 AES 之薄膜成份分析………………………………………………………48
3.4.6 XRD 之結晶特性分析………………………………………………………49
3.4.7 AFM 之平均粗糙度分析……………………………………………………49
3.4.8 n&k 膜厚測量之探討…………………………………………………………50
3.4.9 片電阻及導電率之探討………………………………………………………50
第四章不同緩衝層二氧化鈦感測特性分析
4.1 TiO2 感測度特性探討…………………………………………………………100
4.1.1 電流-電壓(I-V)量測系統……………………………………………………100
4.1.2 電壓-時間(V-T)量測系統…………………………………………………101
4.1.3 電阻-時間(R-T)量測系統…………………………………………………102
4.2 TiO2 薄膜特性分析……………………………………………………………103
4.2.1 AFM 之平均粗糙度分析……………………………………………………103
4.2.2 SIMS 之元素縱深分佈分析…………………………………………………104
第五章微機電後製程系統技術之研究
5.1 微機電系統……………………………………………………………………139
5.1.1 微機電系統之產品…………………………………………………………140
5.1.2 生技產業之應用……………………………………………………………141
5.1.3 微機電產業之挑戰…………………………………………………………142
5.2 MEMS 之基本結構……………………………………………………………142
5.2.1 懸臂樑………………………………………………………………………142
5.2.2 橋接器………………………………………………………………………143
5.2.3 蝕刻窗………………………………………………………………………143
5.2.4 薄膜…………………………………………………………………………143
5.3 微機電製程之源極隨耦器讀出電路的探討…………………………………143
5.3.1 雙級運算放大器……………………………………………………………144
5.3.2 源極隨耦器…………………………………………………………………145
5.3.3 積體電路架構之佈局………………………………………………………145
5.3.4 測試考量……………………………………………………………………146
5.4 微機電系統封裝技術…………………………………………………………147
5.4.1 封裝技術……………………………………………………………………147
5.4.2 微機電封裝技術與電子元件封裝技術之比較……………………………147
5.4.3 微機電系統之封裝裸露設計………………………………………………148
第六章非理想效應之研究
6.1 溫度效應………………………………………………………………………168
6.1.1 溫度效應之定義……………………………………………………………168
6.1.2 溫度效應之量測與討論……………………………………………………168
6.2 時漂效應………………………………………………………………………169
6.2.1 時漂效應之定義……………………………………………………………169
6.2.2 時漂效應之理論與模型……………………………………………………169
6.2.3 時漂量測系統與步驟………………………………………………………173
6.2.4 時漂效應之量測與討論……………………………………………………173
6.3 遲滯效應………………………………………………………………………174
6.3.1 遲滯效應之定義……………………………………………………………174
6.3.2 遲滯效應之理論與模型……………………………………………………174
6.3.3 遲滯效應之量測……………………………………………………………176
6.3.4 遲滯效應之結果與討論……………………………………………………177
第七章結果與討論
7.1 二氧化鈦薄膜製程之討………………………………………………………189
7.1.1 二氧化鈦薄膜最佳製程參數………………………………………………189
7.1.2 二氧化鈦薄膜之ESCA 分析………………………………………………189
7.1.3 二氧化鈦薄膜之AFM分析…………………………………………………190
7.1.4 二氧化鈦薄膜之XRD分析………………………………………………190
7.1.5 二氧化鈦薄膜之AES 分析…………………………………………………190
7.2 不同緩衝層二氧化鈦感測特性之討論………………………………………191
7.2.1 多層之薄膜結構……………………………………………………………191
7.2.2 多層薄膜結構之比較………………………………………………………191
7.3 微機電系統源極隨耦器設計之討論…………………………………………192
7.4 非理想效應之結果與討論……………………………………………………193
7.4.1 溫度效應……………………………………………………………………193
7.4.2 時漂效應……………………………………………………………………193
7.4.3 遲滯效應……………………………………………………………………194
第八章結論…………………………………………………………………………200
第九章未來展望……………………………………………………………………202
參考文獻……………………………………………………………………………203
口試委員之問題與回答……………………………………………………………214
附錄一投稿論文
附錄1.1 第10 屆化學感測器研討會……………………………………………227
附錄1.2 第二屆奈米與生物科技國際研討會……………………………………229
附錄1.3 大學校院學術論文發表暨研討會………………………………………231
附錄1.4 2004 生物醫學工程研討會………………………………………………233
附錄1.5 第12 屆奈米元件技術研討會…………………………………………236
附錄1.6 第三屆先進技術材料國際研討會………………………………………238
附錄1.7 第六屆東亞化學感測器國際研討會……………………………………240
附錄1.8 九十四年度全國技專校院產學合作成果展……………………………242
附錄二個人履歷……………………………………………………………………244
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