臺灣博碩士論文加值系統

在本篇論文中，區域性應變之nMOSFET，主要是利用氮化矽薄膜本身具有的高應力特性來控制元件通道中的應力大小，進而改善了載子遷移率。由於不同的氮化矽層厚度所造成的應力也不盡相同，所以在可靠性上的影響也會有所不同。而本論文則是著重在不同應力的nMOSFET在可靠性上的影響。
對於不同厚度的氮化矽，經過Hot Carrier Stress後，我們得到氮化矽250nm為最差，而沒有氮化矽覆蓋則為最好。此外，我們嘗試改變汲極電壓以及元件的操作溫度，探討這些變化對於元件穩定性造成何種的影響。我們還探討了加壓後所引起的閘極漏電流，比較其加壓前後漏電流的變化。
隨著製程技術不斷進步以及元件尺寸越縮越小的趨勢下，對於應用區域性應變技術來改善元件的操作速度，將備受矚目。

In this study, a local strained n-channel MOSFET has been fabricated by utilizing a heavy mechanical stress SiNx-capping layer, and further improves the carrier mobility to achieve the purpose of high operation speed. We investigate the local strained effects on nMOSFETs by different Poly-Si and nitride thicknesses. Therefore, the study focuses on the relation of reliability and strain.
After hot carrier stress, the devices with 250-nm SiNx show the largest ΔVth shift and transconductance degradation whereas 170-nm devices show better reliability. As we supply the different drain voltage or operation temperature, the reliability of devices will be change. SILC is an increase in gate oxide leakage current resulting from the application of a stress voltage or current. It is an important concern in scaling gate oxide thickness.
As the device dimension continues to scale down, the local strain technology in future CMOS application will be more respected.

中文摘要
英文摘要
誌謝
目錄
表目錄
圖目錄
第一章 緒論
1-1 背景
1-2 論文架構
第二章 元件製作及電性與可靠性量測方法
2-1 元件製作
2-2 基本電性量測
2-2-1 ID -VGS 特性曲線
2-2-2 ID-VDS 特性曲線
2-2-3 Charge Pumping
2-3 可靠性理論及量測方法
2-3-1 熱載子量測方法
2-3-2 Stress-Induced Leakage Current量測方法
第三章 結果與討論
3-1 元件基本特性
3-2 熱載子效應
3-2-1 時間對熱載子效應之影響
3-2-2 閘極電壓對熱載子效應之影響
3-2-3 溫度對熱載子效應之影響
3-3 SILC
第四章 總結
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