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研究生:陳永康
研究生(外文):Chen Yong-Kang
論文名稱:鎳金屬誘發非晶矽薄膜再結晶行為研究
指導教授:陳大同陳大同引用關係
指導教授(外文):Chen Ta-Tung
學位類別:碩士
校院名稱:國防大學中正理工學院
系所名稱:兵器系統工程研究所
學門:軍警國防安全學門
學類:軍事學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:92
中文關鍵詞:金屬誘發再結晶多晶矽
外文關鍵詞:NiMICpoly-Si
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目前利用再結晶方式製備多晶矽薄膜的製程可區分為固相結晶(SPC, Solid Phase Crystallization)、金屬誘發成長(MIC, Metal Induced Crystallization)與準分子雷射退火(ELA, Excimer Laser Annealing),一般而言由SPC所獲得的多晶矽結晶性良好,MIC製成的多晶矽晶粒較大,而ELA製成的多晶矽則電子遷移率較高。考量SPC製程溫度偏高且ELA製程設備昂貴下,本研究乃企圖結合最適合大面積生產之濺鍍技術與成本低廉之爐退火方式,對濺鍍鎳金屬薄膜之非晶矽薄膜實施退火使其轉變為多晶矽薄膜,並用SEM、AFM、RAMAN與四點探針(FPP, Four-Point-Probe)觀察分析所得之多晶矽薄膜,以探討各種退火參數(溫度、時間、鎳膜厚度與氣氛控制)對其微組織與電性的影響。
根據實驗結果可知,當退火溫度與時間大於500℃/10hrs或550℃/5hrs時,即可於大氣環境下發生鎳金屬誘發非晶矽再結晶之行為,且最大平均粒徑約為320nm,而增加鎳金屬薄膜厚度可降低氧氣造成表面氧化的負面影響,從而可於相同的退火溫度、時間下獲得較大的晶粒。就薄膜電性而言,發現其與退火溫度及時間成正比,而與鎳金屬膜層厚度成反比,另於大氣中退火時可獲得較佳效益(薄膜電性變化最為明顯)之製程參數為550℃/5~10hrs與500℃/10~20hrs,此時鎳膜厚度則以≥4nm為宜。最後,透過比較大氣與鈍氣環境(Ar)退火之結果與觀察側向成長之狀況,於確證各項退火參數所造成的影響後,成功歸納出鎳金屬誘發非晶矽薄膜之行為模式。
The processes commonly used to fabricate poly-silicon (poly-Si) thin films by recrystallization technique can roughly be categorized as Solid Phase Crystallization (SPC)-- superior in achieving film crystallinity, Metal-Induced Crystallization (MIC)-- relatively better in the obtained grain size, and Excimer Laser Annealing (ELA)-- advantageous in improving film’s electron mobility. In view of the fact that SPC has to be carried out at a much higher temperature than the other processes and the ELA process has a rather high initial/running cost, this research aimed, on the basis of MIC process, to develop a low-cost process which is suitable for large-area panel processing by adopting sputtering and furnace annealing techniques. The effects of the thickness of Ni coating and annealing parameters such as processing temperature, time, and chamber’s atmosphere on the microstructure and electrical properties of the obtained film were systematically investigated.
The results showed that nickel-induced crystallization of amorphous silicon thin films could be achieved in the air at an annealing temperature of 500℃ or 550℃ for more than 10hrs or 5hrs respectively and an average grain size around 320nm was observed. Given the same annealing parameters, thicker Ni coating could generate larger grains by minimizing the negative aspect introduced by surface oxidation. The electrical resistance of the obtained poly-Si film was found to be decreasing by reducing the thickness of Ni coating and/or increasing the annealing time and temperature. Based on the obtained results of this study, the recommended MIC process conditions in air are as followed: a Ni layer of 4nm or thicker is deposited on the amorphous silicon which is then annealed at 500℃ or 550℃ for 10~20hrs or 5~10hrs respectively to achieve the nickel-induced crystallization. A model describing the procedure/mechanism of nickel-induced crystallization was also developed in this research by analyzing and summarizing the obtained results.
誌謝 ii
摘要 iii
ABSTRACT iv
目錄 vi
表目錄 ix
圖目錄 x
符號說明 xv
1. 緒論 1
1.1 前言 1
1.2 研究動機 2
2. 文獻回顧 5
2.1 非晶矽、多晶矽與單晶矽的不同 5
2.2 矽薄膜在光電產業中的應用與發展 6
2.2.1 薄膜電晶體液晶顯示器(TFT-LCD) 6
2.2.2 太陽能電池(Solar Cell) 8
2.3.3 影像感測器(Image Sensor) 10
2.3 低溫多晶矽薄膜的製備方法 11
2.3.1 金屬誘發側向結晶(Metal Induced Lateral Crystallization) 12
2.3.2 觸媒式化學氣相沉積(Cat-CVD, Catalytic CVD) 12
2.3.3 準分子雷射退火(Excimer Laser Annealing) 13
2.4 鎳金屬誘發再結晶的機制 15
2.4.1 背景 15
2.4.2 鎳金屬誘發再結晶之原理 17
2.4.3 非晶矽薄膜厚度的影響 21
2.4.4 金屬鎳膜形狀的影響 23
2.4.5 退火溫度與時間的影響 24
2.4.6 退火環境氣氛的影響 25
2.4.7 Ni-MILC成長速率的建模 26
2.5 薄膜片電阻與電子遷移率 28
3. 實驗設備與方法 30
3.1 實驗設備與檢測分析儀器 31
3.1.1 實驗設備 31
3.1.2 檢測分析儀器 37
3.2 實驗方法 43
3.2.1 材料準備 43
3.2.2 實驗步驟 43
4. 結果與討論 46
4.1 鎳膜濺鍍速率與表面形貌分析 46
4.2 腐蝕參數的決定 50
4.3 不同退火溫度之影響 51
4.3.1 晶粒大小與結晶組織 51
4.3.2 結晶特性 55
4.3.3 薄膜電性 55
4.4 不同退火時間之影響 58
4.4.1 晶粒大小與結晶組織 58
4.4.2 結晶特性 58
4.4.3 薄膜電性 58
4.5 不同鎳層厚度之影響 64
4.5.1 晶粒大小與結晶組織 64
4.5.2 結晶特性 69
4.5.3 薄膜電性 69
4.6 氣氛控制與驗證 72
4.6.1 降低鎳膜厚度與縮短退火時間 72
4.6.2 保護氣氛退火 76
4.7 側向成長之觀察 78
4.8 鎳膜誘發非晶矽薄膜再結晶行為之建模 81
5. 結論 84
6. 未來展望 86
參考文獻 87
[1]陳志強編著,LTPS低溫複晶矽顯示器技術,全華科技圖書公司,台北,第1.4-1.6頁,2004。
[2]蕭春木,“低溫多晶矽液晶顯示器(LTPS TFT-LCD)發展現況”,產業調查與技術,第150期,第1-17頁,2004。
[3]http://en.wikipedia.org/wiki/Silicon,Wikipedia線上百科大全。
[4]http://smdl.snu.ac.kr/Lecture/display1/LTPS_HJK1.pdf,韓國國家半導體材料元件實驗室網站。
[5]顧鴻壽,周本達,陳密,張德安,樊雨心,周宜衡等合編,平面面板顯示器基本概論,高立圖書公司,台北,第187-191頁,2004。
[6]林春宏、萬遠祖,“次世代平面顯示器生產技術的應用及發展趨勢”,機械月刊,第31卷,第5期,第90-103頁,2005。
[7]http://www.lockheedmartin.com/data/assets/11257.pdf,洛克希德馬丁公司網站。
[8]Kazmerski, L.L., Polycrystalline and Amorphous Thin Films and Devices, Academic Press, New York, pp. 259-262, 1981.
[9]熊谷秀,“太陽光電知多少”,科學發展,第383期,第34-41頁,2004。
[10]Puglisi,R.A., Tanabe, H., Chen, C.M., Atwater, H., “Large-grained polycrystalline Si films obtained by selective nucleation and solid phase epitaxy,” Materials Science and Engineering, Vol. B73, No. 1, pp. 212-217, 2000.
[11]劉世忠,“電子眼-影像感測器”,產經資訊,第14期,第27-30頁,2004。
[12]http://www.sharp-world.com/products/device/catalog/pdf/ccd/ccd2004_e.pdf,夏普公司網站。
[13]Hultman, L., Robertsson, A., Hentzell, H.T.G., Engström, I., Psaras, P.A., “Crystallization of amorphous silicon during thin-film gold reaction,” Journal of Applied Physics, Vol. 62, No. 9, pp. 3647-3655, 1987.
[14]Radnoczi, G., Robertsson, A., Hentzell, H.T.G., Gong, S.F., Hasan, M.A., “Al induced crystallization of a-Si,” Journal of Applied Physics, Vol. 69, No. 9, pp. 6394-6399, 1991.
[15]Lee, S.W., Joen, Y.C., Joo, S.K., “Pd induced lateral crystallization of amorphous Si thin films,” Applied Physics Letters, Vol. 66, No. 13, pp. 1671-1673, 1995.
[16]Nemanichi, R.J., Fulks, R.T., Stafford, B.L., Vanderplas, H.A., “Initial reactions and silicide formation of titanium on silicon studied by Raman spectroscopy,” Journal of Vacuum Science and Technology A, Vol. 3, pp.938-941, 1985.
[17]Heya, A., He, A.Q., Otsuka, N., Matsumura, H., “Anomalous grain boundary and carrier transport in cat-CVD poly-Si films,” Journal of Non-Crystalline Solids, Vol. 277-230, pp. 1016-1020, 1998.
[18]Sunayama, H., Yamada, K., Karasawa, M., Ishibashi, K., “Preparation of poly-Si films by Cat-CVD for thin film transistor,” Thin Solid Films, Vol. 430, No. 1-2, pp. 226-229, 2003.
[19]Matsumura, H., Umemoto, H., Masuda, A., “Cat-CVD (hot-wire CVD) - how different from PECVD in preparing amorphous silicon,” Journal of Non-Crystalline Solids, Vol. 338-340, pp. 19-26, 2004.
[20]http://www.jaist.ac.jp/ms/labs/handoutai/matsumura-lab/research/Cat- CVD.html,日本北陸尖端科技大學網站。
[21]張至宇,“以ArF準分子雷射製備多晶矽薄膜之表面形貌及再結晶行為研究”,碩士論文,國防大學中正理工學院兵器系統工程研究所,桃園,第13-15頁,2005。
[22]Jin, Z., Bhat, G.A., Yeung, M., Kwok, H.S., Wong, M., “Nickel induced crystallization of amorphous silicon thin films,” Journal of Applied Physics, Vol. 84, No. 1, pp. 194-200, 1998.
[23]Wong, M., Jin, Z., Bhat, G.A., Wong, P.C., Kowk, H.S., “Characterization of the MIC/MILC interface and its effects on the performance of MILC thin-film transistors,” IEEE Transactions on Electron Devices, Vol. 47, No. 5, pp. 1061-1067, 2000.
[24]陳志強編著,LTPS低溫複晶矽顯示器技術,全華科技圖書公司,台北,第5.7-5.9頁,2004。
[25]Park, K.C., Lee, J.H., Song, I.H., Jung, S.H., Han, M.K., “Poly-Si thin film transistors fabricated by combining excimer laser annealing and metal induced lateral crystallization,” Journal of Non-Crystalline Solids, Vol. 299-302, pp. 1330-1334, 2002.
[26]Hwang, J.D., Chang, J.Y., Chen, G.J., “Two-step annealing for nickel-induced crystallization of amorphous silicon films,” Journal of the Electrochemical Society, Vol. 152, No. 6, pp. G487-G490, 2005.
[27]侯智元、吳耀銓,“藉由不同壓印圖形製作低溫複晶矽薄膜電晶體與其元件特性之比較”,中國材料科學學會2005年年會論文集,台北,2-2-O-004,2005。
[28]Makihira, K., and Asano, T., “Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology,” Applied Physics Letters, Vol. 76, No. 25, pp. 3774-3776, 2000.
[29]Jang J., “Super-Grain Poly-Si by Metal Induced Crystallization of Amorphous Silicon,” Polycrystalline Semiconductors VII: Solid State Phenomena, Vol. 93, pp. 199-206, 2003.
[30]Hayzelden, C.,and Batstone, J.L., “Silicide formation and silicide-medlated crystallization of nickel-implanted amorphous silicon thin films,” Journal of Applied Physics, Vol. 73, No. 12, pp. 8279-8269, 1993.
[31]Schoenfeld, O., Hempel, T., Zhao, X., Aoyagi, Y., “Crystallization of amorphous silicon by NiSi2 precipitates,” Thin Solid Films, Vol. 261, No. 1-2, pp. 236-240, 1995.
[32]趙志偉,“金屬觸媒在液晶顯示器及場發射顯示器之應用-用金屬觸媒促進低溫複晶矽及奈米碳管之成長”,交通大學材料科學及工程研究所,博士論文,新竹,第17-53頁,2003。
[33]Ma, T., and Wong, M., “Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon films,” Journal of Applied Physics, Vol. 91, No. 3, pp. 1236-1241, 2002.
[34]Gu, J., Chou, S.Y., Yao, N., Zandergen, H., Farrer, J.K., “Single-crystal Si formed on amorphous substrate at low temperature by nanopatterning and nickel-induced lateral crystallization,” Applied Physics Letters , Vol. 81, No. 6, pp. 1104-1106, 2002.
[35]Qin, M., Poon, M.C., Fan, L.J., Chan, M., Yuen, C.Y., Chan, W.Y., “Study of grain growth of polysilicon formed by nickel-induced-lateral-crystallization of amorphous silicon and subsequent high temperature annealing,” Thin Solid Films, Vol. 406, No. 1-2, pp. 17-22, 2002.
[36]Yuen, C.Y., Poon, M.C., Chan, W.Y., Qin, M., “Investigation of grain formation and growth in nickel-induced lateral crystallization process,” Journal of Applied Physics, Vol. 92, No. 10, pp. 6291-6295, 2002.
[37]蔡信行譯,現代化學(I),天下遠見出版社,台北,第99-104頁,2003。
[38]http://en.wikipedia.org/wiki/Reaction_rate,Wikipedia線上百科大全。
[39]Jin, Z., Moulding, K., Kwok, H.S., Wong, M., “The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films,” IEEE Transactions on Electron Devices, Vol. 46, No. 1, pp. 78-82, 1999.
[40]Cheng, C.F., Leung, T.C., Poon, M.C., Chan, Mansu, “Large-grain polysilicon crystallization enhancement using pulsed RTA,” IEEE Electron Devices Letters, Vol. 25, No. 8, pp. 553-555, 2004.
[41]Lin, Y.D., Wu, Y.C.S., Chao, C.W., Hu, G.R., “Effects of oxygen on growth of Ni induced lateral crystallization of amorphous silicon films,” Materials Chemistry and Physics, Vol. 80, No. 3, pp. 577-580, 2003.
[42]Cheng, C.F., Poon, M.C., Kok, C.W., Chan, M., “Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization,” IEEE Transactions on Electron Devices, Vol. 50, No. 6, pp. 1467-1474, 2003.
[43]http://ece-www.colorado.edu/~bart/ecen3320/newbook/chapter2/ch2_7.htm,美國科羅拉多大學網站。
[44]王建義編譯,薄膜工程學,全華科技圖書公司,台北,第2.34-2.37頁,2004。
[45]http://www.icknowledge.com/misc_technology/Sputter.pdf,IC知識網站。
[46]http://www.four-point-probes.com/jannotes.html,大橋科技公司網站。
[47]http://www.virginiasemi.com/pdf/siliconetchingandcleaning.pdf,維吉尼亞半導體公司網站。
[48]http://www.chemistryquestion.jp/situmon/shitumon_koukoukagaku_kagaku24_aqua_regia.html,日本化學提問網站。
[49]Wasa, K., and Hayakwa, S., Handbook of Sputter Deposition Technology- Principles, Technology and Applications, Noyes Publications, New Jersey, Ch. 2-1.1.
[50]http://www.rit.edu/~lffeee/wet_etch.pdf,美國羅契斯特技術學院網站。
[51]陳光華,鄧金祥等編著,新型電子薄膜材料,曉圓出版社,台北,第67-68頁,2006。
[52]程光熙著,拉曼布里淵散射,科學出版社,北京,第239-242頁,2003。
[53]Choi, J.H., Kim, D.Y., Kim, S.S., Park, S.J., Jang, J. “Polycrystalline silicon prepared by metal induced crystallization,” Thin Solid Films, Vol. 440, No. 1-2, pp. 1-4, 2003.
[54]Cheng, C.F., Leung, T.C., Poon, M.C., Kok, C.W., Chan, M., “Modeling of large-grain polysilicon formation under retardation effect of SPC,” IEEE Transactions on Electron Devices, Vol. 51, No. 12, pp. 2205-2210, 2004.
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1. 吳美美(1996)。演進中的圖書館評鑑工作與評鑑研究。教育資料與圖書館學,34(1):40-59
2. 于卓民(民83)。瑞典和日本顧客滿意度指標比較。商業現代化,7:12-16
3. 邱子恆(1999)。行銷概念在圖書館及其資訊服務之應用:文獻分析。大學圖書館,3(4):120-130。
4. 柯麗娟(民83)。美國為什麼開始建立全美顧客滿意度指標,商業現代化,7:12-13
5. 唐麗英,胡安華(1996)。滿意度模式建立與滿意構面確認之研究。交大管理學報,16(1):55-74
6. 許中平(2003)。以機會管理方格應用於顧客滿意度之研究:以礁溪溫泉為例。蘭陽學報,2:119-130
7. 陳瑞文(2003)。從「符號互動論」觀點探討台灣傳播媒體的現代圖書館形象。教育資料與圖書館學,41(2):203-218
8. 莊佩樺(民90)。我國大學圖書館自動化與網路化後資訊服務品質提升與相關問題之研究。國立台灣大學圖書資訊學研究所未出版碩士論文。
9. 曾淑賢(民90)。公共圖書館系統管理模式之探討-以芬蘭赫爾辛基市立圖書館及臺北市立圖書館為例。國立中央圖書館臺灣分館館刊,7(3):1-29
10. 謝寶煖(1997)。公共圖書館讀者服務涉入之研究。中國圖書館學會會報,58:107-132。
11. 謝寶煖(1998a)。行銷圖書館與資訊服務。圖書與資訊學刊,27:40-54。
12. 謝寶煖(1998b)。從顧客觀點來談圖書館的績效評估。國立成功大學圖書館館刊,1:10-22。
13. 盧秀菊(1999)。學術圖書館之績效評估。大學圖書館,3(4):4-14
14. 羅思嘉(民91)。圖書館經營策略規劃-成大圖書館經驗,國立成功大學圖書館館刊,10:
15. [6]林春宏、萬遠祖,“次世代平面顯示器生產技術的應用及發展趨勢”,機械月刊,第31卷,第5期,第90-103頁,2005。
 
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