臺灣博碩士論文加值系統

本論文之目的為因應電路設計與模擬之需求，開發以解析的參數萃取技術建立指叉狀金氧半場效電晶體模型。研究所需測試鍵則委託CIC下線TSMC 0.35 m 2P4M製程製作，具有重摻雜p型護環的多指閘極結構電晶體。透過兩階段的模型參數萃取：外部寄生的冷量測模型參數萃取技術，將零偏壓的冷量測模型作適當修正，並利用非線性擬合方式分離萃取；在本質模型模型則以BSIM3v3為基礎，再加入基體耦合電阻及S21≠S12不可逆的轉換電容Cm，透過解析的參數萃取模型參數。模擬驗證在10 GHz射頻頻段，可準確建立通用型射頻金氧半場效電晶體模型。
應用精確模型參數萃取技術，分析測試鍵通道長度、通道寬度、指叉狀閘極數、元件面積以及抑制交越雜訊之護環結構。當元件採用更短通道的製程、適當的通道寬度與指狀閘極數關係，可產生最佳化的閘極電阻與基底耦合電阻佈局，或是可增加基底耦合阻抗的p+護環結構，都是有效提升射頻電晶體效能的可行方向。
電晶體元件量測在汲極端產生高頻的糾結現象，吾人利用單埠輸出電路模型的關係，糾結現象主要受到模型參數Rsub、gm、gds及Rs的影響，而產生低頻阻抗圓與高頻導納圓的曲線糾結。利用模型萃取掌握糾結現象產生的機制及有效的抑制的策略，在金氧半場效電晶體的設計上，減少通道長度、適當的通道寬度與指狀閘極數關係，或者設計最佳化的護環結構以提升基底耦合阻抗，除了提昇電晶體的效能外也可抑制高頻糾結現象。

Through continuous scale reduction and improvement in high-frequency performance of the CMOS devices, silicon-based RFIC’s have been emerged as an attractive solution to satisfy the rapidly growing demand of the system-on-chip (SOC) applications. The SOC, based on silicon technology, will accommodate more and more functions with lower cost. The capabilities of the design tools to accurately predict the circuit performance of the RF products through simulation is indispensable. Therefore, an active design tool with accurate models becomes a critical issue for the production designs.
It is well known that the CMOS circuits are fabricated on a resistive silicon substrate; modeling techniques that describe RF MOSFET models including substrate resistances have been reported. However, the existing equivalent circuit models do not have the series inductance which involves the residual self inductance due to an incomplete de-embedding processes. In this thesis, we proposed a profitable parameter extraction method which consists of direct extraction and curve fitting techniques. It is shown that the new method exhibits a great capability for RF MOSFET modeling.
In this thesis, we applied this model to study difference of channel length, channel width, area, guard-ring and their impact on performance of the CMOS devices. In addition, we also modeled parameters that control the kink phenomenon.

目 錄

誌謝
摘要
ABSTRACT
目錄
表目錄
圖目錄
1. 緒論
1.1 前言
1.2 研究動機與文獻回顧
1.3 研究目的
1.4 論文架構
2. 理論
2.1 金氧半場效電晶體簡介
2.1.1 金氧半場效電晶體分類
2.1.2 金氧半場效電晶體的操作原理
2.2 金氧半場效電晶體模型
2.2.1 模型簡介
2.2.2 模型基本理論
2.2.3 高頻模型
2.2.4 高頻糾結現象(Kink Phenomenon)
3. 實驗規劃
3.1 電晶體測試鍵設計
3.1.1 電晶體測試鍵佈局設計
3.2 量測程序
3.2.1 設備規格
3.2.2 系統校準
3.3 模型參數萃取
3.3.1 剔冗技術
3.3.2 參數萃取
4. 結果與討論
4.1 萃取結果
4.2 電晶體模型參數與外加偏壓分析
4.2.1 電容Cgs、Cgd與偏壓的關係
4.2.2 電容Csd與偏壓的關係
4.2.3 電容Cm與偏壓的關係
4.2.4 電導gm、gds與偏壓的關係
4.2.5 基底電容Cjd及電阻Rsub與偏壓關係
4.3 佈局結構與電晶體模型參數關係
4.4 糾結現象
4.4.1 糾結現象模型探討
5. 結論
參考文獻
自傳

參考文獻

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