臺灣博碩士論文加值系統

本研究的主要目的在探討不同溝渠深度對生長在圖案化氮化鎵之紫外光發光二極體之磊晶品質及光電特性之影響。發光二極體結構採用有機金屬化學氣相磊晶(MOVPE)生長。薄膜中銦、鋁、鎵與氮原子分別來自於三甲基銦、三甲基鋁、三甲基鎵以及高純度的氨氣，而載流氣體則是高度純度氫氣。圖案化氮化鎵樣品利用感應耦合電漿離子蝕刻對氮化鎵蝕刻出不同溝渠深度。元件的表面型態、磊晶品質與光電學特性分別使用諾瑪斯基干涉式光學顯微鏡、穿透式電子顯微鏡、光激發光量測、電致發光量測加以分析。由穿透式電子顯微鏡之結果顯示，生長在圖案化氮化鎵上之紫外光發光二極體，其內部貫穿式差排密度有明顯的改善，而氮化鎵溝渠深度為1.5um的紫外光發光二極體具有最佳的元件特性與光學品質。

The purpose of this study is to explore the effects of trench depth of pattern GaN templates on the crystalline qualities and optical properties of GaN-based ultra-violet light emitting diodes grown on patterned GaN templates. The devices were prepared by metal organic vapor phase epitaxy (MOVPE), with groups III metalorganics and NH3 being used as the sources of In, Al, Ga and N atoms that were carried into the reactor by purified H2. Inductively Coupled Plasma Reactive Ion etching was then used to develop the different trench-depths on the grooved GaN templates. The surface morphologies, crystallinities and optical properties of GaN-based ultra-violet light emitting diodes were investigated by Nomarski interference optical microscopy, transmission electron microscopy(TEM), photoluminescence(PL) measurements, and electroluminescence(EL) measurements. The reduction of TD density of GaN-based ultra-violet light emitting diodes grown on patterned GaN templates were attributed to the TDs elimination via GaN lateral overgrowth above trench regions as revealed by XTEM observations. It was found that the LEDs grown on 1.5 mm-deep grooved GaN templates exhibited the best crystalline quality and optical characteristics.

中文摘要................................................. i
英文摘要................................................. ii
致謝..................................................... iii
目錄..................................................... iv
圖目錄................................................... vi
第一章 緒論...............................................1
第二章 研究背景與動機.....................................5
2.1 發光二極體之發展與文獻回顧.....................5
2.2 氮化鎵磊晶薄膜與氧化鋁基板之晶格錯配..........13
2.3 貫穿式差排的形成機制及它們對元件弁鄐尬v響....17
2.4 Ⅲ族氮化物橫向磊晶技術........................23
2.5 氮化鎵薄膜生長於圖案化基板....................26
第三章 實驗步驟..........................................29
3.1 實驗流程......................................29
3.2 發光二極體晶片表面型態觀察....................33
3.3 發光二極體之光激發光光譜分析..................35
3.4 發光二極體之電致發光光譜分析..................39
3.5 氮化鎵紫外光發光二極體之穿透式電子顯微鏡觀察..42
第四章 實驗結果與討論....................................49
4.1 氮化鎵發光二極體晶片表面型態..................49
4.2 氮化鎵發光二極體之光激發光(PL)光譜分析........53
4.3 氮化鎵發光二極體之電致發光(EL)光譜分析........58
4.4 氮化鎵紫外光發光二極體晶粒點測分析............62
4.4.1 順向電壓點測分析........................62
4.4.2 逆向偏壓下漏電流點測分析................64
4.5 氮化鎵紫外光發光二極體之穿透式電子顯微鏡分析..66
第五章 結論..............................................75
參考文獻.................................................76
作者簡介.................................................81

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