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研究生:蔡明璋
研究生(外文):Ming-Chang Tsai
論文名稱:超晶格鑲嵌結構對氮化銦鎵多重量子井發光二極體元件特性影響之研究
論文名稱(外文):Effect of superlattice inserted structure on the characteristics of InGaN multiple quantum well light emitting diodes
指導教授:龔志榮黃勝廣
指導教授(外文):J. R. GongS. K. Hwang
學位類別:碩士
校院名稱:國立中正大學
系所名稱:光機電整合工程所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:68
中文關鍵詞:中間層藍光二極體超晶格
外文關鍵詞:interlayersuperlatticeInGaN/GaN
相關次數:
  • 被引用被引用:1
  • 點閱點閱:254
  • 評分評分:
  • 下載下載:58
  • 收藏至我的研究室書目清單書目收藏:0
本論文主要在探討在氮化鎵薄膜內插入不同組數的氮化鋁鎵/氮化鎵超晶格結構,對後續成長之氮化銦鎵多重量子井發光二極體特性包括理想因子、漏電流、電致發光與光激發光性質的影響。實驗結果發現,超晶格結構插入氮化鎵層能有效降低元件內部的貫穿式差排密度,因而有助於降低元件之理想因子與漏電流,對於發光二極體的電致發光特性也有很大的改善。橫截面穿透式電子顯微鏡分析顯示,部份貫穿式差排有效地被氮化鋁鎵/氮化鎵超晶格結構阻擋,充分顯示發光二極體內部貫穿式差排密度的降低應是導致元件弁鉥ㄓ氻坏D因。
In this study, we report the investigations on the characteristics of GaN-based LEDs having various Al0.3Ga0.7N(2nm)/GaN(2nm) SPSL-inserted structures in the underlying GaN layers of the LED structures. The Al0.3Ga0.7N(2nm)/GaN (2nm) SPSL inserted GaN-based LEDs were found to exhibit improved device characteristics including decrements in ideality factor and reverse leakage current as well as enhancements of electroluminescence (EL) and photoluminescence (PL) intensities. The results of transmission electron microscopic observations reveal the filtering of threading dislocations (TDs) near the Al0.3Ga0.7N(2nm)/GaN (2nm) SPSL structure of the SPSL-inserted GaN-based LEDs. It is believed that the SPSL-induced TD density reduction in the SPSL-inserted GaN-based LED structures enables the improved device characteristics.
誌謝.........................................................i
中文摘要....................................................ii
Abstract...................................................iii
圖目錄......................................................vi
表目錄.......................................................x
第一章 導論..................................................1
第二章 研究背景及動機........................................5
2-1 發光二極體發展背景與文獻探討.............................5
2-2 氮化鎵薄膜品質改善之演進.................................6
2-3 氮化銦鎵薄膜和氮化銦鎵/氮化鎵量子井結構..................9
第三章 實驗步驟.............................................15
3-1 元件結構與製程..........................................15
3-2 發光二極體之光電特性量測................................17
3-2.1 發光原理..............................................17
3-2.2 光激發光測量..........................................18
3-2.3 電致發光與電壓電流量測................................18
3-3 發光二極體元件顯微結構分析..............................19
3-3.1元件內缺陷和它們對元件特性之影響.......................19
3-3.2 穿透式電子顯微鏡試片準備..............................21
3-3.3 穿透式電子顯微鏡分析..................................22
第四章 實驗結果與討論.......................................28
4-1 氮化銦鎵多重量子井發光二極體之電流-電壓(I-V)特性........28
4-2 氮化銦鎵多重量子井發光二極體之電致及光激發光特性分析....32
4-3 氮化銦鎵多重量子井發光二極體之顯微結構特性分析..........34
第五章 結論.................................................49
參考文獻....................................................50
作者簡介....................................................54
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