臺灣博碩士論文加值系統

眾所皆知，化學機械研磨(CMP)製程在半導體產業生產流程中扮演不可或缺的角色，而在自動操控CMP製程的方法中，可以隨時調整設備操作配方的批次間控制(Run-to-Run Control)被認為是合宜的方法之一，其中EWMA控制器是最常被提出來探討的控制策略。一般在使用EWMA控制器於CMP製程時，皆將製程及模式設成簡單的線性關係式，在此條件下Double EWMA多能展現良好的控制成效；對於實際的CMP機台操作，受到許多未知的干擾因素影響，Double EWMA控制器之效能則大打折扣。由此，本研究將考慮前一批製程對後一批製程造成的影響，也嘗試加入擾動變數之估算值，並引進可以自我調諧的折扣因子，謂之適應性EWMA控制器。利用蒐集到的CMP現場製程數據進行模擬測試後，結果顯示所提出的適應性EWMA控制方法確實可以有效提昇製程輸出的品質。

As we know, chemical mechanism polishing (CMP) process takes a big weight in semiconductor industrial process. For the CMP process control, run-to-run (RtR) control is known as a suitable method which can always adjust the process recipe. EWMA (Exponentially Weighted Moving Average) controller is the popular strategy for RtR control methodologies. It usually assumes process as a simple linear relational expression without dynamic behaviors. But under real plant process situation, there exists many undetermined disturbances, it may not get efficient control results when we only use Double EWMA controller. So, in this research, we consider the effect of pre-output and try to get acceptable disturbance estimations. Then we use a self-tuning discount factor to develop an adaptive double EWMA controller. After we put on the data of real CMP process and simulate this test, the results show that the proposed adaptive double EWMA controller can give efficient control performance for the CMP process.

摘要...................................................i
Abstract.............................................ii
目錄.................................................iii
附圖目錄...............................................v
附表目錄.............................................vii
第一章 緒論.............................................1
1.1前言................................................1
1.2文獻回顧.............................................2
1.3研究動機.............................................4
1.4組織章節.............................................5
第二章 化學機械研磨製程介紹...............................6
2.1前言................................................6
2.2 CMP製程介紹.........................................7
2.2.1 CMP製程原理.......................................7
2.2.2 CMP製程之設備.....................................8
2.2.3 CMP製程之應用工程.................................11
2.2.4 CMP製程的研磨要求及目標...........................16
2.3 記憶體元件的應用....................................17
2.4 淺溝渠隔離製程(STI)的應用............................18
2.5 CMP之各項要素 ......................................21
2.6 CMP的未來..........................................22
第三章 批次間控制器原理與設計.............................24
3.1 前言 ..............................................24
3.2 EWMA控制器原理說明..................................25
3.2.1內模式控制(Internal model control, IMC)原理說明.....25
3.2.2 Single EWMA 控制器原理說明........................29
3.2.3 Double EWMA(dEWMA)控制器原理說明..................35
3.3 修正型EWMA控制說明..................................38
3.3.1 modified-EWMA(m-EWMA)控制(徐仁國, 2004)...........39
3.3.2 modified-Double EWMA(m-dEWMA)控制(徐仁國, 2004)...42
3.3.3 擾動模式修正項之設計方法...........................45
3.4 可自我調諧折扣因子之EWMA控制器........................45
3.4.1 在EWMA控制器時使用自我調諧折扣因子..................46
3.4.2 在dEWMA控制器時使用自我調諧折扣因子.................47
第四章 CMP製程之批次間控制結果比較與討論...................50
4.1 CMP製程與取樣數據說明 ...............................50
4.2 dEWMA控制器應用於CMP製程上之控制效果.................54
4.3 修正型dEWMA控制器應用於CMP製程上之控制效果............60
4.4 適應性EWMA控制器應用於CMP製程上之控制效果.............63
第五章 結論與未來發展方向.................................69
5.1 結論..............................................69
5.2 未來發展...........................................70
參考文獻................................................71

Boning, D. S., W. Moyne, and T. H. Smith, “Run by Run Control of Chemical Mechanical Polishing,” IEEE Trans. CPMT (C), 19, 307-314, 1996.

Butler, S. W., and J. A. Stefani, “Supervisory Run-to-Run Control of Polysilicon Gate Etch Using in Situ Elliposmetry,” IEEE Trans. on Semiconductor Manufacturing, 7, 193-201, 1994.

Chen, A., and R. S. Guo, “Age-Based Double EWMA Controller and Its Application to CMP Process,” IEEE Trans. on Semiconductor Manufacturing, 14, 11-19, 2001.

Del Castillo, E., “Statistical Process Adjustment for Quality Control,” John Wiley & Sons, Inc., New York, 2002.

Hotelling, H., “Analysis of a Complex of Statistical Variables into Principal Components,” Journal of Educational Psychology, 24, 498-520, 1993.

Kojima, T., M. Miyajima, F. Akaboshi, T. Yogo, S. Ishimoto, and A. Okuda, “Application of CMP Process Monitor to Cu Polishing,” IEEE Trans. on Semiconductor Manufacturing, 13, 293-299, 2000.

Moyne, J., E. Del Castillo, and A. M. Hurwitz, “Run-to-Run Control in
Semiconductor Manufacturing,” CRC Press LLC, Florida, 2001.

Mozumder, P. K., S. Saxena, and D. Collins, “A Monitor Wafer Based Controller for PECVD Silicon Nitride Process on AMT 5000,” Proceedings of the IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 136-141, 1993.

Mozumder, P. K., and G. G. Barna, “Statistical Feedback Control of a Plasma Etch Process,” IEEE Trans. on Semiconductor Manufacturing 7, 1-11, 1994.

Patel, N. S., G. A. Miller, C. Guinn, A. C. Sanchez, and S. T. Jenkins, “Device Dependent Control of Chemical-Mechanical Polishing of Dielectric Films,” IEEE Trans. on Semiconductor Manufacturing, 13, 3, 2003.

Russell, E., L. H. Chang, and R. D. Braatz, “Data-Driven Methods for Fault Detection and Diagnosis in Chemical Processes,” Springer-Verlag London Limited, London, 2000.

Sachs, E., R. S. Guo, S. Ha, and A. Hu, “Process Control System for VLSI Fabrication,” IEEE Trans. on Semiconductor Manufacturing 4, 134-143, 1991.

Shiu, S. J., C. C. Yu, and S. H. Shen, “Batch Sequencing for Run-to-Run Control : Application to Chemical Mechanical Polishing,” Proceedings of 2003 Symposium on Process Systems Engineering, Taipei, Taiwan, 25-36, 2003.

Smith, T. H., and D. S. Boning, “A self-tuning EWMA controller utilizing artificial neural network function approximation techniques,”IEEE Trans. CPMT (C), 20, 121-132, 1997.

Steigerwald, J. M., S. P. Murarka, and R. J. Gutmann, “Chemical Mechanical Planarization of Microelectronic Materials,” John Wiley & Sons, Inc., New York , 1997.

Sugimoto, F., Y. Arimoto, and T. Ito, “Simultaneous Temperature Measurement of Wafers in Chemical Mechanical Polishing of Silicon Dioxide Layer,” Japanese Journal of Applied Physics, 34, 6314-6320, 1995.

王建榮，林必窕，林慶福編譯，“半導體平坦化CMP 技術”，全華科技圖書股份有限公司，台北，台灣，2000。

何人傑，“EWMA 控制器非固定折扣因子之研究”，清華大學統計學研究所工業統計組碩士論文，新竹，台灣，2000。

林宜弘，“化學機械研磨製程(CMP)之即時片間控制”，長庚大學化工與材料工程研究所碩士論文，桃園，台灣，2004。

施敏，黃調元譯，“半導體元件物理與製作技術”，國立交通大學出版社，新竹，台灣，2002。

徐仁國，“半導體製程中modified-EWMA批次間控制之應用”，台灣大學化學工程研究所碩士論文，台北，台灣，2004。

許勝智，“多重區段化學機械研磨：多變數與逐批控制” ，台灣大學化學工程研究所碩士論文，台北，台灣，2003。

莊達人編著，“VLSI製造技術”，高立出版社，台北，台灣，2002。

蘇安治，“離線應用批次間控制於化學機械研磨”，長庚大學化工與材料工程研究所碩士論文，桃園，台灣，2003。