目前主要有兩種較為準確且最被廣泛使用來量測接面溫度(junction temperature)方法，這兩種方法稱為波長偏移法(emission peak wavelength shift method)與順向偏壓法(diode forward-voltage method)，這兩種方法的缺點是與基板上方的元件結構有很大的影響，這種影響會造成量測上的許多誤差以及不方便。為了改善這兩種方法，本論文探討利用砷化鎵(GaAs)基板受到動作層(Active layer)發光激發而產生的光激發光譜(Photoluminescence, PL)，利用此光譜受到溫度的變化會產生紅位移現象的機制，根據瓦西尼經驗公式(Varshni equation)中溫度與能隙的關係，我們可以得到一種新的接面溫度量測方法，透過光激發光譜得到之接面溫度的結果，與透過波長偏移法所得到之結果相當吻合。而由於砷化鎵基板的光激發光譜是可以直接對應到溫度的變化，並不會受到上方元件結構所影響，且不需要在做接面溫度量測前先量測溫度與波長位移的關係。
另外，高功率磷化鋁鎵銦發光二極體(AlGaInP LED)中由於操作電流提升所造成元件接面溫度分部不均勻及電流擁擠(current crowding)的現象，透過環狀電極的設計，可以有效改善發光亮度下降、元件壽命降低的情況。

There are two generally and accurately method to measure junction temperature. These two methods are called emission peak wavelength shift method and diode forward-voltage method. The defect of these methods is that the junction temperature measurements are strongly depend on the device structures above the substrate. The influence of structures induced deviation and incommodity when measured junction temperature. This work discussed with using photoluminescence spectra of GaAs substrate excited by active layer. According to Varshni equation and the red shift of spectra, we have a new method of measuring junction temperature. The results of new method were consisting with emission peak wavelength shift method, and because the substrate PL spectra shift depend directly on temperature unaffected by the structures.
On the other hand, by reaching the circular pattern for p-contact, the unevenness of temperature distribution and current crowding effect in high power AlGaInP LED when the operation current increase.

致謝……………………………………………………………………Ⅰ
中文摘要……………………………………………………………Ⅱ
英文摘要………………………………………………………………Ⅲ
目錄……………………………………………………………………Ⅳ
第一章 緒論…………………………………………………………… 1
1-1材料發展背景與特性………………………………………… 1
1-2 研究動機……………………………………………………… 3
1-3 研究儀器及論文架構………………………………………… 5
第二章 實驗原理……………………………………………………… 6
2-1二極體發光原理……………………………………………… 8
2-2發光二極體電流分佈模型………………………………… 10
2-3發光二極體電流侷限效應………………………………… 10
2-4溫度與材料能隙的關係………………………………………11
2-5光激發光原理…………………………………………………12
2-6 穿透式電子顯微鏡……………………………………………13
2-7 單色分光儀工作原理…………………………………………14
第三章 量測結果分析與討論…………………………………………15
3-1變溫電激發光譜量測…………………………………………17
3-2變電流電激發光譜量測………………………………………21
3-3電流-電壓(I-V)量測………………………………………… 23
3-3.1 Pulse I-V、DC I-V量測………………………………23
3-3.2 高能斜率量測………………………………………… 25
3-4高功率磷化鋁鎵銦發光二極體電極設計 ………………… 26
3-5 高功率磷化鋁鎵銦發光二極體量測 ………………………26
第四章 結論……………………………………………………………29
參考文獻……………………………………………………………… 31

圖目錄
第一章 緒論
Fig.1-1 三元化合物以之晶格常數對應能係大小……………………33
Fig.1-2 四元化合物以之晶格常數對應能係大小……………………33
Fig.1-3 三元氮化物之晶格常數對應能係大小………………………34
Fig1-4電激光頻譜量測結構示意圖…………………………………34
第二章 實驗原理
Fig2-1半導體的直接能隙發光示意圖………………………………35
Fig2-2 AlGaInP LED之電流分佈模型………………………………35
Fig2-3單色分光儀結構圖及工作原理………………………………36
Fig2-4穿透式電子顯微鏡量測儀器原理示意圖……………………36
Fig2-5電子束與測試元件作用示意圖………………………………37
第三章 量測結果分析與討論
Fig3-1 AlGaInP LED樣品……………………………………………38
Fig3-2 TEM量測結果…………………………………………………39
Fig3-3 AlGaInP LED元件結構圖……………………………………40
Fig3-4 LED多重量子井示意圖………………………………………40
Fig3-5 AlGaInP LED 變溫光譜量測(nm)，溫度範圍300K~450K…41
Fig3-6 AlGaInP LED 變溫光譜量測(eV)，溫度範圍300K~450K…42
Fig3-7 AlGaInP LED DRB反射率模擬………………………………43
Fig3-8 DBR反射率量測結果…………………………………………44
Fig3-8 AlGaInP LED peak波長紅位移現象(nm)……………………45
Fig3-9 AlGaInP LED 870nm峰值紅位移現象(eV)……………………46
Fig3-10 AlGaInP LED 620nm 峰值隨溫度的紅位移(V)……………47
Fig3-11 AlGaInP LED 870nm 峰值隨溫度的紅位移(eV)……………48
Fig3-12 AlGaInP LED 變電流光譜量測(nm)…………………………49
Fig3-13 AlGaInP LED 變電流光譜量測(eV)…………………………50
Fig3-14 AlGaInP LED變電流波長紅位移……………………………51
Fig3-15 AlGaInP LED 不同操作電流之接面溫度變化………………52
Fig3-16 AlGaInP LED 變溫Pulse I-V、I0、Rs量測…………………53
Fig3-17透過變溫Pulse I-V 所得到之接面溫度變化………………54
Fig3-18 AlGaInP LED接面溫度隨電流的變化………………………55
Fig3-19 AlGaInP PowerChip LED 自行設計不同電極圖形…………56
Fig3-20 powercihp LED PAD1 在不同倍率下的光譜………………57
Fig3-21 powercihp LED PAD2 在不同倍率下的光譜………………58
Fig3-22 powercihp LED PAD3在不同倍率下的光譜………………59
Fig3-23 powercihp LED PAD1 變電流光譜(nm)……………………60
Fig3-24 powercihp LED PAD1 變電流光譜(eV)……………………61
Fig3-25 powercihp LED PAD2 變電流光譜(nm)……………………62
Fig3-26 powercihp LED PAD2 變電流光譜(eV)……………………63
Fig3-27 powercihp LED PAD3 變電流光譜(nm)……………………64
Fig3-28 powercihp LED PAD3 變電流光譜(eV)……………………65
Fig3-29 AlGaInP powercihp LED 接面溫度變化……………………66
Fig3-30 Power chip LED 電流變化對亮度量測與Lifetime……… …67

表目錄
Table 3-1高功率發光二極體在500mA電流下不同電極發光亮度與操作電壓比較……………………………………………………………67

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