臺灣博碩士論文加值系統

隨著電子產品越來越小的驅勢，單一元件尺寸也必須符合規格，當元件要求小又需要整合性功能時將會使製程複雜度提升，複雜度提升的同時散熱就成了一重要的指標，而目前高頻微波通訊常用的異質接面雙極電晶體(HBT)及假型通道高速電子移動電晶體(pHEMT)其晶片背面必須鍍金，做為接地及散熱之用。
　　深孔鍍金為目前市場上較具競爭力的技術，利用乾式蝕刻形成晶圓背面孔洞，再使用濺鍍將金種均勻的鍍上做為鍍金時的陰極，最後利用溼式電鍍將金薄膜均勻的沈積在晶背上，雖濺鍍成本高但均勻度佳，故為目前業界常用的製程，但因為陰極層必須有高密度及較好的均勻度，故先用濺鍍形成金種層，再使用低成本但均勻度差的溼式電鍍沈積出厚膜，因此改善電鍍均勻度將會是一項重要的課題。
　　本研究的目地是將利用電子脈衝時間來控制成膜速率，因深孔電鍍會造成孔內外之金溶液濃度不同，因而金沈積厚度不均勻造成電阻升高，因此必須精確的控制孔內外金溶液濃度、溫度、pH值、比重、流動速率及所使用的電流密度，以達到最佳化的電鍍條件：時間短、良率高、成本低。

The trend of shrinking device size and maintaining feature integrated-functions give the manufacturing process towards more complicated and the accompanied heat dissipation also become a challenge. In common practice gold metal is electro-plated on the backside of high frequency HBT and pHEMT devices to use as ground and heat sink.
The deep-hole plating is one of the competitive techniques in the manufacturing process. It forms the back hole on the wafer by dry etching first. Then, the gold is coated uniformly by sputtering followed by a wet etching step. Because the sputtering process has better uniformity, the gold layer is usually formed by sputtering. And the low cost thick film is deposited by electrical plating with the expense of poor uniformity. Therefore, how to improve the quality of the plating film becomes a critical issue in developing modern advanced devices.
The purpose of this thesis work is to control the deposition rate by pulse time. Because deep-hole plating will be influenced by the density of the solution inside and outside the hole, and thus raise the resistance due to the non-uniformity of the deposition. Precise control of solution, temperature, pH value, acidimeter, flow rate and current density is necessary for optimum plating conditions to achieve high yield and low cost.

中文摘要
英文摘要
誌謝
目錄
圖目錄
表目錄
第一章 緒論
1-1 研究動機與目的
1-2 論文大綱
第二章 Ⅲ-Ⅴ晶圓背面(Backside)製程簡介
2-1 背景
2-2 製程分類與介紹
第三章 電鍍原理與製程應用
3-1 電鍍之定義
3-2 電鍍原理
3-3 電鍍基本元件與架構
3-4 電鍍方法
3-4-1 電鍍機台特性
3-5 電鍍基礎
3-6 極化原理
3-7 影響填孔電鍍的因素
第四章 實驗方法與步驟
4-1 實驗流程
4-1-1 電鍍藥水規格
4-1-2 電鍍藥水成份及反應機制
4-1-3 氰化物與非氰化物之電鍍液比較
4-1-4 非氰化物電鍍液金析出機制
4-2 實驗器材及設備
4-3 電鍍範圍
第五章 實驗結果與討論
5-1 實驗方法
5-2 溫度對均勻度之影響
5-3 電鍍液pH值分析
5-4 流場對均勻度之影響
5-5 DC電流分析
5-6 最佳化電子脈衝比
5-7 亮點
第六章 結論與未來展望
6-1 結論
6-2 未來研究目標
6-3 Backside Via Hole金薄膜剝離現象探討
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