臺灣博碩士論文加值系統

表面聲波元件近年來在通訊領域上成為相當熱門的研究領域，此外因其具有高靈敏度的特性，在感測器方面的應用也與日俱增；爲了讓元件能夠具有更高操作頻率、低插入損耗以及與半導體製程整合，利用壓電薄膜製作層狀結構表面聲波元件是相當重要的一件事。
本實驗利用迴旋濺鍍系統(Helicon sputtering system) 沉積氮化鋁(AlN)薄膜在氮化鎵(GaN)基板上，此薄膜經X光繞射儀分析，證實為一磊晶薄膜，以此層狀結構製作表面聲波元件。利用網路分析儀量測元件聲波波速、插入損耗、旁帶抑制等參數，討論表面聲波元件特性。
本論文主要探討AlN/GaN/Sapphire及GaN/Sapphire結構的元件特性以及溫度、環境溼度對元件造成的影響。量測結果發現GaN/Sapphire結構SAW元件之插入損耗為-22.6dB，旁帶抑制為4.8dB；AlN(1μm)/GaN/Sapphire結構SAW元件之插入損耗為-20.6dB，旁帶抑制為12.9dB；AlN(2μm)/GaN/Sapphire結構SAW元件之插入損耗為-18.8dB，旁帶抑制為5.1dB。氮化鎵基板的頻率溫度係數為-49.2ppm/℃，元件頻率變化率對相對濕度(40%~80%)達61.1ppm；沉積1μm氮化鋁薄膜後，其頻率溫度係數為-44.8 ppm/℃，元件頻率變化率對相對濕度(40%~80%)僅3.2ppm。由實驗結果可知沉積氮化鋁薄膜於氮化鎵基板上可以改善元件特性：降低插入損耗、提高旁帶抑制、減少環境溼度對元件影響、具有溫度補償效果。

In recent years, the surface acoustic wave (SAW) devices have become an attractive research field for the application of high frequency filters as well as sensors. In order to obtain high frequency and low insertion loss devices, it is important to use piezoelectric thin films to fabricate layered structure SAW devices.
In this thesis, high quality epitaxial AlN thin films have been deposited on GaN/Sapphire substrates at low temperature of 300�aC using Helicon sputtering system. The layered structure SAW devices fabricated on AlN/GaN/Sapphire were investigated and demonstrated.
The characteristics of AlN/GaN/Sapphire and GaN/Sapphire and the effects of temperature and humidity are discussed. Superior SAW properties in terms of insertion loss and sidelobe rejection have been obtained for the SAW devices made on AlN/GaN/Sapphire, compared to those of the ones made on GaN/sapphire. The temperature coefficient of frequency(TCF) of GaN/Sapphire and AlN/GaN/Sapphire are -49.2ppm/℃ and -44.8ppm/℃, respectively. It was found that AlN layer can compensate the TCF of SAW devices of GaN/Sapphire substrates. In addition, the ratio of center frequency variation of AlN/GaN/Sapphire is 3.2ppm, which is much lower than that of GaN/Sapphire (61.1ppm) at relative humidity ranging from 40 to 80%. These results show that the characteristics can be improved by depositing AlN on GaN/Sapphire.

目錄
中文摘要 I
英文摘要 III
誌謝 V
目錄 VI
圖目錄 IX
表目錄 XIII


第一章 緒論 1
1-1表面聲波元件之簡介 1
1-2 研究背景與目的 3
第二章 原理 8
2-1 氮化鎵的結構與特性 8
2-2 氮化鋁的結構與特性 10
2-3 迴旋濺鍍原理 11
2-3-1 電漿輝光放電 12
2-3-2 射頻濺鍍 14
2-3-3 磁控濺鍍 16
2-3-4 反應性濺鍍 18
2-3-5 迴旋波濺鍍 19
2-4 表面聲波元件理論與特性 21
2-4-1 表面聲波與壓電效應 23
2-4-2 Delta function model 26
2-5 表面聲波元件參數 30
2-5-1 波速 (VP) 30
2-5-2 插入耗損 (Insertion loss) 30
2-5-3 機電耦合係數(K2) 31
2-5-4 頻率溫度係數 (TCF) 32
2-6 量測儀器 33
2-6-1 Ｘ光繞射儀 33
2-6-2 網路分析儀 34
2-6-2-1 Ｓ參數 35
2-6-2-2 晶圓量測法 37
第三章 實驗 40
3-1 AlN薄膜沉積 40
3-1-1 基板清洗 40
3-1-2 氮化鋁薄膜沉積 40
3-1-2-1 迴旋濺鍍系統 41
3-1-2-2 薄膜沉積 42
3-2 層狀結構表面聲波元件之製作 44
3-2-1 指叉電極之設計與參數 44
3-2-2 微影蝕刻 47
第四章 結果與討論 51
4-1 氮化鋁薄膜分析 51
4-2 表面聲波元件特性分析 55
4-3環境溼度影響量測 62
4-4 頻率溫度係數(TCF)量測 64
4-4-1 薄膜厚度與頻率溫度係數 64
4-4-2 波長與頻率溫度係數 67
4-4-3 氮化鋁與氮化鎵頻率溫度係數比較 69
第五章 結論與未來展望 72
參考文獻 73


圖目錄
圖2-1 氮化鎵基本結構 9
圖2-2 氮化鋁的結晶構造: (a) 變形四面體結構 (b) 單位晶胞 11
圖2-3 輝光放電示意圖 13
圖2-4 典型射頻平面電極濺鍍結構圖 16
圖2-5 平面型圓型磁控之結構圖 17
圖2-6 平面磁控濺鍍中電子運動示意圖 17
圖2-7 反應性濺鍍示意圖 19
圖2-8 迴旋波示意圖 20
圖2-9 迴旋濺鍍系統 21
圖2-10 表面聲波在彈性固體上運動 22
圖2-11 正壓電效應 24
圖2-12 逆壓電效應 24
圖2-13 表面聲波濾波器基本結構 25
圖2-14 表面聲波元件傳輸特性 26
圖2-15 (a)雙向均勻指叉 (b)指叉邊緣產生的電場 (c)將電場等效成Delta function sources 29
圖2-16 (a)令指叉中心為x = 0 (b)Delta function model 響應方向示意圖 29
圖2-17 Ｘ光繞射儀之結構 34
圖2-18 雙埠網路訊號流程圖 36
圖2-19 G-S-G 形式微波探針示意圖 38
圖2-20 SOLT校正板示意圖 39
圖3-1 迴旋磁控濺鍍系統架構圖 42
圖3-2 濺鍍氮化鋁實驗流程圖 43
圖3-3 基本型之指叉電極 45
圖3-4 On Wafer形式之指叉電極 45
圖3-5 放大100倍之λ=16μm表面聲波元件 46
圖3-6 放大1500倍之λ=16μm表面聲波元件 46
圖3-7 微影蝕刻實驗之流程圖 50
圖4-1 不同溫度下射頻功率150w、coil功率50w、氮氣氬氣比75%、濺鍍壓力為1m Torr沉積氮化鋁薄膜於GaN/Sapphire之XRD圖 52
圖4-2 在300℃射頻功率150w、coil功率50w、氮氣氬氣比75%、濺鍍壓力為1m Torr沉積氮化鋁薄膜於GaN/Sapphire之XRD圖 52
圖4-3 AlN(101)、GaN(101)、Sapphire(104) ψ方向掃描量測圖 54
圖4-4 GaN厚度3.6μm且元件波長為16μm之頻率響應圖 57
圖4-5 GaN厚度3.6μm且元件波長為16μm之S11、S22圖 57
圖4-6 AlN厚度1μm且元件波長為16μm之頻率響應圖 58
圖4-7 AlN厚度1μm且元件波長為16μm之S11、S22圖 58
圖4-8 AlN厚度2μm且元件波長為16μm之頻率響應圖 59
圖4-9 AlN厚度2μm且元件波長為16μm之S11、S22圖 59
圖4-10 波長為16μm之氮化鋁(1μm)、氮化鎵頻率響應比較圖 61
圖4-11 厚度1μm其波長不同之氮化鋁頻率響應比較圖 61
圖4-12 氮化鎵SAW頻率變化對相對濕度關係圖 63
圖4-13 氮化鋁SAW頻率變化對相對濕度關係圖 63
圖4-14 氮化鋁與氮化鎵SAW相對濕度變化關係圖 64
圖4-15 氮化鎵基板厚度波長比對TCF關係圖 65
圖4-16 元件波長16μm之氮化鎵基板溫度變化對頻率關係圖 66
圖4-17 元件波長16μm且氮化鋁薄膜厚度為1µm之溫度變化對頻率關係圖 66
圖4-18 元件波長16μm且氮化鋁薄膜厚度為2µm之溫度變化對頻率關係圖 67
圖4-19 波長32µm不同厚度之氮化鋁薄膜在GaN/Sapphire上TCF之關係 68
圖4-20 波長16µm不同厚度之氮化鋁薄膜在GaN/Sapphire上TCF之關係 69
圖4-21 比較氮化鋁與氮化鎵對元件TCF的影響 70
圖4-22 TCF值與波長厚度比關係圖 71


表目錄
表2-1 聲波傳遞方式 22
表3-1 濺鍍氮化鋁之最佳參數表 43
表3-2 基本型指叉電極設計之參數 47
表4-1 不同厚度之氮化鋁薄膜與氮化鎵基板特性比較表 60
表4-2 不同波長、厚度之氮化鋁薄膜對TCF影響 69
表4-3 文獻參考之元件結構圖 71

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