臺灣博碩士論文加值系統

本論文旨在研究由磷化鎵和金膜組成之蕭基二極體的激發表面電漿波特性及光偵測效率。我們改良半導體層的磷化鎵基板成為單邊傾斜的梯型結構以作為耦合器，並使用He-Ne雷射光為光源在金屬層表面激發出表面電漿波。如此不僅有助於光偵測效率的提升，亦有助於元件小型和積體化的設計。研究的內容包括蕭基二極體的結構設計、激發表面電漿波特性、光電流特性、量子效率和光偵測器應用設計等。研究結果顯示，對波長633nm之紅光而言，單邊傾斜角度約20。的梯型磷化鎵基板和厚約50nm的金膜所組成之蕭基二極體，其共振角度約位於19。；藉由表面電漿共振可增強二極體之光電流強度，以利量子效應之提升；光電流的強度與光入射位置、金膜面積、磷化鎵基板厚度有關。此結構之蕭基二極體可提供高量子效率和靈敏度的光偵測器設計之參考，亦可結合微機電整合技術(MEMS)來製作微型和積體化之光偵測器。

This thesis aims at studying the characteristic of exciting the surface plasma wave of Shottky diode and photo detector consist of gallium phosphide of the semiconductor material and gold metal film. We improve gallium phosphide of upper base become unilateral terraced structure that slope in order to as the coupler, and use He-Ne laser to exciting the surface plasma wave on the gold film surface of the diode bottom. It is so not merely favorable to only detect the improvement which photo detector efficiency，also contribute to the component small-size design. The content studied includes the coupler designing、the characteristic of exciting the surface plasma wave、enhance the Shottky diode photocurrent characteristic and photo detector design etc..The result of study shows, as to red light of wavelength 633nm of the characteristic of exciting the surface plasma wave Of KR configuration that gallium phosphide unilateral terraced about 20。 structure coupler and gold film about 50nm that slopes of base, its incident angle about 19。. Using excite the surface plasma wave Shottky diode of the photo detector capable of enhance the photocurrent and improve the quantum efficiency. The photocurrent Intensity, mere incidence position, the gold- semiconductor area, the Ohmic contact area, gallium phosphide thickness of base plate have something to do. We designed the photo detector capable of make into a photoelectric measure the component or combine Micro-Electro-Mechanical Systems (MEMS) to make high quantum efficiency and high sensitivity in the future.

摘要 II
ABSTRACT III
目錄 IV
圖目錄 VIII
第一章 緒論 1
1.1. 前言 1
1.2. 研究動機與方法 1
1.3. 章節概述 2
第二章 理論簡介 3
2.1. 光偵測器的基本理論 3
2.1.1. 金屬-半導體接面的基本理論 4
2.1.2. 金屬-半導體接面的電流傳輸機制 6
2.2. 光電子放射的基本理論 7
2.3. 表面電漿波之簡介 8
2.3.1. 金屬和電介質介面的表面電漿波特性 11
2.3.2. 激發表面電漿波的方法 13
2.3.3. 激發表面電漿共振增強蕭基接面之光電流效應 18
第三章 表面電漿波磷化鎵蕭基二極體設計 21
3.1. 表面電漿波蕭基二極體之設計及模擬 21
3.2. 實驗 22
3.2.1. 蕭基二極體製作及特性量測 22
3.2.2. SPR蕭基接面光電流量測特性量測 25
第四章 結果與討論 27
第五章 結論 45
參考文獻 47
自 傳 49

[1] 蘇文寬，”利用激發表面電漿波對化學感測器及光電調制器之研究” ，博士論文，國防大
學中正理工學院國防科學研究所，桃園，2000。
[2] 鍾勳，”磷化鎵之激發表面電漿波及感測器設計研究” ，碩士論文，國防大學中正理工學院電子工程研究所，桃園，2005。
[3] Otto, A., “Excitation of nonradiative surface plasma waves in silver by the method of frustrated total reflection,” Zeitschrift fur physic, Vol. 216, No. 4, pp. 398-410, 1968.
[4] Krestchmann, E. and Raether, H., “Radiative decay of non-nadiative surface plasmons excited by light,” Z.Naturforsch, Vol. 23, No. 12, pp. 2135-2136, 1968.
[5] M.A. Khan, J.N. Kuznia, D.T. Olson, M. Blasingame, A.R. Bhattarai,1993 Appl. Phys. Lett. 63 2455.
[6] Q. Chen, J.W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M.Z. Anwar, M. Asi Khan, D. Kuksenkov, H. Temkin, 1997 Appl. Phys. Lett. 70 2277.
[7] E. Monroy, F. Calle, E. Munoz, F. Omnes, P. Gibart, J.A.Munoz,1998 Appl.. Phys. Lett. 73 2146
[8] D. Walker, E. Monroy, P.Kung, J. Wu, M. Hamilton, F.J.Sanchez, J.Diaz, M. Razeghi, 1999 Appl. Phys. Lett.74 762.
[9]Cazeca, M.J., Chang, C.C., and Karakashian, A.S., “A model caculation for surface plasman-enchanced internal photoemission in Schottky-barrier photodiode,” J.Appl. Phys., Vol.66 No. 7, pp. 3386, 1989.
[10] Tamm, I. R., Dawson, P., Sellal, A., Pate, M. A., Grey, R., and Hill, G., “Analysis of Surface Plasmon Polariton Enhancement in Photodetection by Al-GaAs Schottky Diodes,” Solid-State Electronics, Vol. 36, pp. 1417-1427, 1993.
[11] Savost Yanova, N.A., and Sandomirshy, V. B., “Control of the Dispersion Law of an Interface Polarition in a Metal-Semiconductor Schottky Barrier Structure”, IOP Publishing Ltd., 185(1993).
[12] Daboo, C., Baird, M. J., Hughes, H. P., Apsley, N., and Jones, H. A. C., “Surface-Plasmon-Enhanced Photodetection in Planar Au-GaAs Schotty Junctions,” Thin Solid Films, No. 189, pp. 27, 1990.
[13] Daboo, C., et. al., Thin Solid Film, J.Appl, phys., Vol. 189, pp. 27-39, 1990.
[14] Mott, N. F., “Note on the Contact Between a Metal and an Insulator or Semiconductor”, Pro. Cam. Philo. Soc. 34,568(1938).
[15] Matsubara, K., Kawata, S., and Minami, S., “Multilayer system for a high-precision surface plasmon resonance sensor,” Optics Letters, Vol. 15, No. 1, pp. 73-75, 1990.
[16] Abanulo, J. C., Harris, R. D., Sheridan, A. K., Wilkinsona, J. S., and Bartlett P. N., “Waveguide surface plasmon resonance studies of surface reactions on gold electrodes,” The Royal Society of Chemistry 2002, Vol. 121, pp. 139–152, 2002.
[17] Pepper, S.V., J. Opt. Soc. Am., No. 60, pp.805, 1970.
[18] http://www.itrc.org.tw/
[19]Sellai, A., and Dawson, P., ”Scheme for enhancing effciency in resonant-cavity Schottky photodetectors,” Microelectronics Journal, Vol. 32, pp. 779-782, 2001.
[20]Sellai, A., and Dawson, P., ” Quantun efficiency in GaAs Schottky photodetectors with enhancement due to surface plasmon excitations,” Solid-State Electronics, Vol. 46, pp. 29-33, 2002.
[21]Dmitruk, N. L., Mayeva, O. I., Mamykina, S. V., Yastrubchaka, O. B. Yastrubchaka, and Klop¯eisch, M., “Characterization and application of multilayer diffraction gratings as optochemical sensors,” Sensors and Actuators A, Vol. 88, pp. 52-57, 2001.
[22]Dmitruk, N. L., and et. al., ” Photosensitivity control of detectors based on surface plasmon-polariton resonance in Schottky structure,” IEEE, pp. 309-314, 1997.
[23]Derov, J., Teng, Y. Y., and Karakashian, A. S., "Angular Scan Spectrum of a Surface Plasma Excitation on a Schottky Diode,” Phys. Lett., Vol. 95A, pp. 197, 1983.
[24]Edward, D. P., “Handbook of Optical Constant of Solids,” Academic Press Inc. New York, 1985.Pepper, S.V., J. Opt. Soc. Am., No. 60, pp.805, 1970.