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研究生:邱志平
研究生(外文):Chih-Ping Chiu
論文名稱:複晶矽薄膜電晶體的照光與電性分析應用在主動式液晶面板研究
論文名稱(外文):Investigation and analysis on Illumination & electrical characteristics of polysilicon thin-film transistor for AMLCD display
指導教授:梅玉貞
指導教授(外文):Yu-Jane Mei
學位類別:碩士
校院名稱:清雲科技大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:59
中文關鍵詞:複晶矽薄膜式電晶體準分子雷射退火連續側向結晶
外文關鍵詞:poly silicon thin film transistorsexcimer laser annealingsequential lateral
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近年來,複晶矽薄膜式電晶體(Poly-Si TFTs)應用在相當多的方面上,例如:記憶體、主動式液晶顯示器(AMLCDs)等,其主要的原因就是複晶矽薄膜電晶體有著相當高的電子移動率(Field Effect Mobility)並且高於非晶矽薄膜電晶體一百倍以上。
利用複晶矽薄模式電晶體來製作畫素的元件及週邊驅動的電路,製作平面液晶顯示器大面積玻璃積體化將會是未來的趨勢,因此複晶矽薄膜電晶體的可靠度與電性將會是未來被關注的重點。
在本論文中我們針對複晶矽薄膜電晶體在準分子雷射退火(ELA)與連續側向結晶(SLS)不同的製程操作下對光的敏感度研究,兩種元件在相同通道或在不同的通道尺寸之下使用背光源板從元件底部照射觀察元件特性對光的影響,由於不同的製程方式造成晶界在閘極位置有所不同,進而影響元件的特性,諸如起始電壓、載子遷移率、次臨界波動等等,透過電性分析可以釐清缺陷能態的分佈,並找出操作電壓與缺陷密度產生的關聯性,提供未來產業界發展相關技術一個重要的參考資料。
Recently, poly silicon thin film transistors (poly-Si TFTs ) have been applied in many aspects such as memory, active matrix liquid crystal display (AMLCDs) and so on. Main reason for this because the field effect mobility of poly-Si TFT is almost 100 times higher than that of amorphous silicon thin film transistor.
Among different applications, poly Si TFT has been utilized to manufacture pixel switching devices and display-related peripheral driver circuits. It is realized that, with the technology of poly Si TFT, fabrication of large area flat panel liquid crystal display based on glass structure has been a long term trend. Thus, it is very important to focus studies on reliability and electrical characteristic of poly Si TFT.
In this thesis, the aim is to study photo sensitivity of poly silicon thin film transistors under different manufacture process such as ELA(.excimer laser annealing) and SLS(sequential lateral solidification).We use backlight source board to shine the bottom of device and observe the effects of device characteristic under various channel dimensions. Due to the different manufacture process cause the various location of grain boundary. Since properties of poly Si TFT like threshold voltage, electrical mobility, subthreshold swing etc. will be degraded due to hot carrier effect, it is the main target to investigate the defect energy gap distribution raised from that effect through electricity analysis. The relationship between operation voltage and defect density will be established as well in this research. It is hoped that information resulted from this thesis can be useful for technology and product development in TFT industry.
目錄
中文摘要………………………………………………………………………………… i
英文摘要………………………………………………………………………………… ii
誌謝……………………………………………………………………………………… iii
目錄……………………………………………………………………………………… iv
圖目錄…………………………………………………………………………………… vi
第一章 緒論…………………………………………………………………………… 1
1.1研究動機…………………………………………………………………… 1
1.2研究背景…………………………………………………………………… 2
1.3元件結晶製程方式………………………………………………………… 4
1.4內容大綱…………………………………………………………………… 5
第二章 電性量測儀器簡介…………………………………………………………… 6
2.1半導體參數分析儀器之簡介 6
2.1.1安傑倫4156C儀器功能之簡述 6
2.1.2 前側面板之簡述 7
2.1.3 背側面板之簡述 9
2.2 人機功能特性描述軟體簡介 (ICS) 11
第三章 元件製程與特性 12
3.1 元件的製造方法 12
3.2 元件參數擷取的方法 15
3.2.1 臨界電壓的決定因素 15
3.2.2 次臨界擺幅的決定因素 16
3.2.3 場效移動率的決定因素 16
3.2.4 開關電流比的決定因素 17
3.2.5 通道電阻與寄生電阻的決定因素 18
3.3 元件特性 19
3.3.1 短通道效應 19
3.3.2漏電流與扭結效應 19
第四章 實驗步驟與結果 21
4.1 照光機制 21
4.2 ELA元件基本與背照光電性量測分析 22
4.2.1 照光量測電性分析 23
4.2.2 照光時不同長度(L)參數分析 29
4.3 ELA元件與SLS元件基本電性比較分析 34
4.4 ELA元件與SLS元件背照光電性比較分析 41
4.4.1 照光對ELA元件與SLS元件的影響 44
4.4.2 ELA元件與SLS元件照光的參數分析 46
第五章 結論與展望…………………………………………………………………… 54
5.1 結論 54
5.2 未來與展望 54
參考文獻………………………………………………………………………………… 56
簡歷……………………………………………………………………………………… 59
參考文獻
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