跳到主要內容

臺灣博碩士論文加值系統

(44.220.255.141) 您好!臺灣時間:2024/11/14 05:44
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

我願授權國圖
: 
twitterline
研究生:羅紹威
研究生(外文):LOU, SHAO-WEI
論文名稱:矽晶圓磨削特性與磨削參數之研究
論文名稱(外文):Grinding Characteristics and Process Parameter Study of Silicon Wafer
指導教授:紀華偉
指導教授(外文):Chi, Hua-Wei
學位類別:碩士
校院名稱:大葉大學
系所名稱:機械工程研究所碩士班
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:95
中文關鍵詞:晶圓表面磨削磨削參數因子交互作用Box-behnjken
外文關鍵詞:surface grinding of silicon wafergrinding process parametersfactor interactionBox-behnken experiment designtotal thickne
相關次數:
  • 被引用被引用:4
  • 點閱點閱:454
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
矽晶圓片之製造始於長晶。長成之晶圓必須經過線切割將晶圓錠切成薄片狀晶圓片。切割完成之晶圓片必須經過許多製程,才能製成各種晶片使用。晶圓表面磨削為其中重要製程之一,其目的在減少晶圓片厚度並達成晶片所須的平坦度與表面粗糙度。當晶圓片尺寸越來越大,其原始厚度亦必須隨之增大,以確保製程中晶圓片具有足夠強度。晶圓片表面磨削製程於是愈顯重要並吸引許多研究者興趣。晶圓片表面磨削可分為粗磨與精磨兩階段。粗磨階段使用較高之進幾速率以獲得較大材料移除率。精磨階段則採用較低的進幾速率以確保晶片製作所需表面粗糙度與平坦度的達成。在所有的磨削參數中,與材料移除率及平坦度及表面粗糙度有關的重要參數有主軸轉速、工作台轉速與進幾速率。相關研究指出這些參數之間存在著不可忽略的交互作用。但田口法並不適用於具有交互作用的實驗。本實驗以二階Box-Benkhen法進行實驗設計以估算磨削參數之主影響力及交互作用。此法採三水準部分因子實驗,可以有效估算因子之主影響力、交互作用及曲率效果。觀察之實驗輸出包含主軸馬達電流、工作台馬達電流、表面粗糙度與平坦度。本文將建立品質特性與磨削參數之模型,並以顯著性分析,變異數分析等確認模型之正確性,最後以數學規劃法找出晶圓片精磨之最佳磨削參數,提高晶圓片之性能與品質,充分發揮晶圓磨削機之性能。
Manufacturing of silicon wafers begins with growing silicon ingots and slicing these ingots into wafers by wire sawing. The sliced wafers have to go through many processes before they can be used for various applications. The surface grinding of silicon wafer is one of important processes used to flatten the wafers and to reduce the thickness of the wafer. As the diameter of the wafers becomes larger and larger, the sliced wafers become thicker and thicker. Surface grinding has become more important and has attracted more interest among investigators. Surface grinding can be divided into two steps, namely coarse grinding and fine grinding. In the coarse grinding, high feedrate is used to obtain high material removal rate. In the fine grinding, low federate is used to assure high surface quality. Among the grinding process parameters, wheel rotational speed, chuck rotational speed and federate are considered to have the surface flatness and roughness. It is also known that interactions between these process parameters exist for these quality characteristics. Widely used Taguchi experiment method uses partial factorial experiments to evaluate the main effects of the factors(parameters)and to identify the optimum settings of these factors. But Taguchi method is not adequate when there are strong interaction effects between factors. In this research, second-ordered Box-Benkhen experiment design is employed to reveal the main effects and the interaction effects of the process parameters of silicon wafer surface grinding. The process outputs studied include spindle motor current, chuck motor current, surface roughness and total thickness variation(TTV)of the wafer. The models that relate the process parameters with respect to fine grinding will then be determined by mathematical programming methods to increase the through put and quality of the silicon wafers.
第一章 緒論...........................................................1
1.1 前言.....................................................1
1.2 研究之背景及目的..........................................2
1.3 論文架構.................................................5
第二章 文獻回顧.......................................................6
第三章 加工原理......................................................13
3.1 輪磨加工原理.............................................13
3.1.1 晶圓磨削痕軌跡.....................................17
3.2 表面特性定義.............................................20
3.2.1 表面粗糙度理論.....................................20
3.3 TTV....................................................24
3.4 移除率理論...............................................27
3.5 回歸基本概念.............................................27
3.5.1 顯著性............................................29
第四章 實驗計畫......................................................33
4.1 研究方法................................................33
4.2 實驗設備及實驗參數規劃....................................36
4.3 實驗流程................................................40
第五章 實驗結果及討論.................................................47
5.1 主軸馬達負荷分析.........................................47
5.2 工作台馬達負荷分析........................................51
5.3 表面粗糙度分析...........................................55
5.3.1 表面粗糙度(內)...................................55
5.3.2 表面粗糙度(中)...................................62
5.3.3 表面粗糙度(外)...................................69
5.4 平坦度之分析.............................................75
5.5 晶圓材料移除率...........................................83
5.6 晶圓表面磨痕軌跡.........................................84
第六章 結論及未來展望.................................................87
6.1 結論....................................................87
6.2 未來展望................................................89
參考文獻............................................................90
附錄................................................................94
[1] 王文瑞,“晶圓超精密輪磨技術探討”,機械工業雜誌,255期,115~124頁,
2004年。
[2] Z.j. Pei,A. Strasbaugh,“Fine grinding of silicon wafers”,
International Journal of Machine Tools &tManufacture,vol.41,
Page(s):659–672,2001。
[3] B. Zhang,J. Wang,F. Yang,Z. Zhu,“The effect of machine
stiffness on grinding of silicon nitride”,International
Journal of Machine Tools & Manufacture,vol.39,Page(s):1263–
1283,1999。
[4] H. Huang,L. Yin,L. Zhou,“High speed grinding of silicon
nitride with resin bond diamond wheels”,Journal of Materials
Processing Technology,vol.141,Page(s):329–336,2003。
[5] R. Gåhlin,H. Björkman,P. Rangsten,S. Jacobson,“Designed
abrasive diamond surfaces”,Wear,233–235,Page(s):387
–394,1999。
[6] 陳鴻榮,“磨削能量對磨後工件表面品質之探討”,國立高雄第一科技大學機械與自
動化工程研究所,2002。
[7] Z.j. Pei,A. Strasbaugh,“Fine grinding of silicon wafers:
designed experiments”,International Journal of Machine Tools
& Manufacture,vol.42,Page(s):395–404,2002。
[8] Z.j. Pei,“A study on surface grinding of 300 mm silicon
wafer”,International Journal of Machine Tools & Manufacture,
vol.42,Page(s):385–393,2002。
[9] S. Chidambaram,Z.J. Pei,S. Kassir,“Fine grinding of silicon
wafer:a mathematical model for the chuck shape”International
Journal of Machine Tools & Manufacture,vol.43,Page(s):739–
746,2003。
[10] L.B. Zhou,H. Eda,J. Shimizu,“State-of-the-art technologies
and kinematical analysis for one-stop finishing of ψ300 mm
Si wafer”,Journal of Materials Processing Technology,
vol.129,Page(s):34–40,2002。
[11] W. Sun,Z.J. Pei,G.R. Fisher,“Fine grinding of silicon
wafers:a mathematical model for the wafer shape”,
International Journal of Machine Tools & Manufacture,vol.44,
Page(s):707–716,2004。
[12] 廖文仁,“立軸轉台平面磨床磨削晶圓之表面輪廓研究”,國立清華大學動力機械
工程研究所,1999。
[13] 陳谷全,“平面超細磨削矽晶圓加工之研究”,樊華大學機電工程研究所,2001。
[14] 蘇侃,“由研磨加工時的工件溫度分佈預測表面平坦度”,國立台灣大學機械工程
學研究所,2003。
[15] 黃大猷,“晶圓表面性狀之奈米量測”,雲林科技大學機械工程技術研究所,
2000。
[16] W. Sun,Z.J. Pei,G.R. Fisher,“Fine grinding of silicon
wafers:machine configurations for spindle angle
adjustments”,International Journal of Machine Tools &
Manufacture,vol.45,Page(s):51–61,2005。
[17] S. Chidambaram,Z.J. Pei,S. Kassir,“Fine grinding of silicon
wafer:a mathematical model for grinding marks”,International
Journal of Machine Tools & Manufacture,vol.43,Page(s):1595–
1602,2003。
[18] P.L. Tso,C.C. Teng,“A study of the total thickness variation
in the grinding of ultra-precision substrates”,Journal of
Materials Processing Technology,vol.116,Page(s):182–
188,2001。
[19] L. Zhou,J. Shimizu,K. Shinohara,H. Eda, “Three-dimensional
kinematical analyses for surface grinding of large scale
substrate”,Precision Engineering,vol.27,Page(s):175–184,
2003。
[20] 林健平,“再生晶圓表面輪廓之輪磨加工特性研究”,國立清華大學動力機械工程
研究所,2000。
[21] Z.j. Pei,S.R. Billingsley,S. Miura,“Grinding induced
subsurface cracks in silicon wafer”,International Journal of
Machine Tools & Manufacture,vol.39,Page(s): 1103-1116,1999。
[22] 黃弘毅,“矽晶圓超精密輪磨技術”,國立台灣大學機械工程研究所,2003。
[23] Y.C. Fu,H.J. Xu,J.H. Xu,“Optimization design of grinding
wheel topography for high efficiency grinding”,Journal of
Materials Processing Technology,vol.129,pagr(s): 118-122,
2002。
[24] H.H. Tsai,H. Hocheng,“Prediction of thermally induced
concave ground surface of the workpiece in surface grinding”,
Journal of Materials Processing Technology,vol.122,Page(s):
148–159,2002。
[25] 高道鋼,“超精密加工技術”,全華科技圖書股份有限公司,2000。
[26] 田忠義信等人,“精密加工新技術全集”,賴耿陽譯者,復漢出版社,1993。
[27] 黃大猷,“晶圓表面性狀之奈米量測”,雲林科技大學機械工程技術研究所,
1999。
[28] 邱皓政,“量化研究與統計分析”,五南圖書出版股份有限公司,2000。
[29] 準利機械股份有限公司,“JL-200SCG 產品操作手冊”。
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top