臺灣博碩士論文加值系統

RTA（Rapid Thermal Annealing）技術在VLSI製程裡的應用，將隨著製程熱預算的緊縮而更加的廣泛，因為 RTA 技術夾著能在短時間內，將晶片所處的環境提升到1000℃以上的優點，已逐漸被廣泛採用。在本研究中是以鎳/鈦氧化前經過500度RTA氬氣回火的方式先行第一階段氧化，再以爐管400、450度通入氧氣進行回火，最後再450度腔體內通入氮氣作氮化處理，緻密化鎳鈦酸薄膜。由實驗結果可知，經由氧化前氬氣回火及氧化後氮化處理是可以有效改善鎳鈦酸薄膜的缺陷。

RTA( Rapid Thermal Annealing) Technology has been
applied to the process in VLSI, extensive with thermal budget, because RTA technology can insert the advantage of bringing the environment that the chip is in up to more than 1000 degrees Centigrade within short time, have already been adopted extensively gradually. In this work,
the first oxidization of nickel/titanium film is completed by RTA. Then,the second oxidization at 450℃ using furnace.
Finally, NiTiO3 film is melted by nitrogen treatment at 450 ℃. We find that it will improve property by directly oxidization after pre-oxidation and post-oxidation treatment.

中文摘要……………………………………………………………… I
英文摘要…………………………………………………………… II
誌謝…………………………………………………………………III
目錄……………………………………………………………………IV
圖目錄……………………………………………………………VII
表目錄…………………………………………………………………IX
第一章 緒論……………………………………………………… 1
1.1 研究背景………………………………………………… 1
1.2 研究動機……………………………………………………2
1.3 電極材料的選擇…………………………………………5
1.4 薄膜物性分析………………………………………………8
1.4.1 原子力顯微鏡（SPM）表面粗糙度分析………10
1.4.2 X-ray 薄膜繞射儀檢測（XRD）…………………10
1.4.3 歐傑電子能譜儀分析（AES）…………………11
1.4.4 穿透式電子顯微鏡（TEM）厚度分析…………11
1.5 電容電性分析…………………………………………12
1.5.1 C-V量測…………………………………………12
1.5.2 I-V量測……………………………………………12
1.5.3 崩潰電場（EBD）…………………………………12
1.5.4 電容氧化層等效厚度（CET）…………………13
1.6 理論與文獻回顧………………………………………13
1.6.1 薄膜形成方式……………………………………13
1.6.2 濺鍍（Sputtering）法……………………………14
1.6.3 薄膜沉積機制……………………………………16
1.6.4 介電體薄膜………………………………………17
1.6.5 電漿原理…………………………………………18
1.7 論文架構…………………………………………………21
第二章 利用氧化後電漿回火改善低溫成長之鎳鈦酸並應用在MIM電
容………………………………………………………22
2.1 引言………………………………………………………22
2.2 實驗步驟…………………………………………………23
2.3 結果與討論…………………………………………………24
2.4 結論………………………………………………………27
第三章 利用氧化前氬氣回火改善低溫成長之鎳鈦酸並應用在MIM電
容………………………………………………………38
3.1 引言………………………………………………………38
3.2 實驗步驟…………………………………………………39
3.3 結果與討論………………………………………………40
3.4 結論………………………………………………………43
第四章 總結………………………………………………………62
參考文獻……………………………………………………………63

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