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研究生:許維民
研究生(外文):Wei-min Hsu
論文名稱:產生近似步階電流波型之電路設計
論文名稱(外文):Design of a Circuit for Generating Approximated Step Waveforms of Current
指導教授:黃建立
指導教授(外文):Jian-li Huang
學位類別:碩士
校院名稱:逢甲大學
系所名稱:資訊電機工程碩士在職專班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:50
中文關鍵詞:補償電路金屬氧化半導體場效電晶體
外文關鍵詞:MOSFETcompensate circuit
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本文主要在設計一個電路來產生近似步階的電流波型,應用於測試電流感測器的響應時間,由於步階電流波型的最大電流達數十安培,電路採用MOSFET功率電子元件做為電流的開關元件,流經MOSFET的電流大小受驅動電壓控制,步階的驅動電壓可產生近似步階的電流波型,但步階電流的上昇時間必須達到微秒等級的要求。傳統的MOSFET電路設計無法達到此要求,本文提出一個改進的產生近似步階電流波型電路的設計方法,並以實驗和模擬探討電路中影響電流上昇時間的因素。
This thesis is designing a piece of circuit to generating approximate step waveforms of current mainly. Apply to test the response time of the detecting device of current. Because the biggest current of step waveforms current is up to several dozen amperes. The circuit adopts MOSFET power electronic element to be done for the switch component of the current. The size current of flowing through MOSFET is urged the voltage to control. Drive voltage of step can is it generating approximate step waveforms of current. But rise time of step current must meet the requirement of grade microsecond. It is unable to reach this request that traditional MOSFET circuit designs. This thesis puts forward an improved generating approximate current waveforms circuit design method of the step. And probe into the factor influencing rise time of current in the circuit with the experiment and simulation.
誌謝………………………………………………………………i
中文摘要…………………………………………………………ii
英文摘要…………………………………………………………iii
目錄………………………………………………………………iv
圖目錄……………………………………………………………vi
第一章 緒論………………………………………………………1
1.1前言………………………………………………………1
1.2研究背景…………………………………………………2
1.3文獻回顧….……………………………………………3
1.4研究動機…………………………………………………5
1.5研究內容與步驟…………………………………………5
第二章 MOSFET特性………………………………………………7
2.1功率半導體元件…………………………………………7
2.2 MOSFET物理結構…………………………………………9
2.3 MOSFET工作原理…………………………………………10
2.4 MOSFET電流-電壓特性……………………………………13
2.5 MOSFET等效電路及切換速度特性改善…………………16
2.6 MOSFET驅動條件…………………………………………19
2.6.1驅動能量與驅動功率………………………………19
2.6.2驅動電流……………………………………………20
第三章 MOSFET電路設計……………………………………………23
3.1傳統MOSFET驅動模式………………………………………23
3.2 MOSFET電路的系統響應模式……………………………24
3.3補償電路設計………………………………………………26
3.4補償電路的實現……………………………………………30
3.5實驗架構……………………………………………………32
3.6實驗結果……………………………………………………34
第四章 電路模擬分析………………………………………………38
4.1傳統MOSFET電路模擬………………………………………38
4.2補償的MOSFET電路模擬……………………………………41
4.3串聯電流感測器的MOSFET電路模擬………………………43
第五章 結論與建議…………………………………………………45
參考文獻……………………………………………………………47
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