臺灣博碩士論文加值系統

金屬氧化物半導體場效應電晶體技術的發展在微電子工業，尤其是積體電路的設計與消費性產品應用上扮演十分重要的角色；為了做出電特性更好更穩定的電晶體，以矽材料為主的單閘極金屬氧化物半導體場效應電晶體於過去四、五十年來已被成功發展。電晶體通道由早期的微米級縮小進入深次微米乃至於近來奈米等級時，新材料、新製程與新結構的研究已引起廣泛的興趣。新結構電晶體有其優點與特性也形成一個有趣的研究方向。
本論文研究通道長度小於32奈米的矽金屬氧化物半導體場效應電晶體在不同閘極結構下的元件特性。論文中探討奈米級單閘極、雙閘極、三閘極以及圓形全閘極矽金屬氧化物半導體場效應電晶體的基本電特性。透過三維度電腦模擬，求解具有量子效應的傳輸方程組（也就是泊松方程式、載子流連續方程式以及密度梯度方程式），論文中比較了各種電晶體的導通電流、截止電流、臨界電壓、短通道特性等。研究發現，在相同的元件參數設定下，針對上面關心的電特性，矽圓形全閘極電晶體在四種電晶體結構下展現良好的元件特性。隨著通道長度逐漸微縮，單閘極電晶體由於其通道控制能力變差，因此特性不易控制的缺點逐一浮現。相較於單閘極電晶體，雙閘極與三閘極電晶體由於通道控制能力有相對維持，因此短通道效應帶來的問題較為緩和。在次32 奈米以下的製程技術，由於完美的閘極控制能力，圓形全閘極電晶體展現許多令人感興趣的結果。

It is known that planar bulk metal-oxide-semiconductor field effect transistors (MOSFETs) play a curcial role in modern microelectronics industry. The device channel nowadays entered sub-100 nanometer (nm) regions; therefore, device material, fabrication technology, and device structure have been of great interests. New device structures may have promising characteristics, and open an interesting research direction.
In this thesis, we study MOSFETs with different gate structures for sub-32 nm technology. Four gate structures, the single-gate, the double-gate, the triple-gate, and the gate-all-around-gate MOSFETs are simulated and compared. We use device simulation software to numerically study the gate structure effect on the electrical characteristics of MOSFETs. The on and off currents, the threshold voltage roll-off, and the short-channel effects are explored and compared. Among device structures, due to perfect channel controbility, results show that the gate-all-around-gate MOSFETs posses fascinating characteristics; in particular, for sub-32 nm technology. We believe that this investigation is useful for MOSFET fabricatin with different gate structures.

誌謝 I
中文摘要 II
中文摘要 II
ABSTRACT III
目錄 IV
圖目錄 V
表目錄 VII
符號目錄 VIII
第一章 緒論 1
1.1 研究動機 1
1.2 研究目的 6
1.3 研究內容 10
1.4 研究方法與流程 12
第二章 不同閘極結構的電晶體 14
2.1 電晶體結構 14
2.2 半導體模式 19
2.3 電腦模擬方法 27
第三章 結果與討論 36
3.1 元件結構設定 36
3.2 基本電位分佈 40
3.3 汲極電流特性 47
3.4 短通道特性 51
第四章 結論與建議 58
4.1 結論 58
4.2 建議 61
參考文獻 63

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