臺灣博碩士論文加值系統

功率元件於二十世紀中期被提出，並且隨著消費性電子產品的增加，其發展及用途也日漸成長，特別是功率金氧半場效應電晶體。然而如何設計出優良的元件，並且使用有效準確的測試方法，也成為目前學界及業界的研究方向。
功率金氧半場效應電晶體在電路應用上多做為開關使用，其要求快的切換速度以及低的功率消耗，而目前最常使用的光罩設計「線型晶胞」及「方形晶胞」都存在其缺點，線型晶胞雖然切換速度快，但其較大的導通電阻值在元件應用上會有其功率損耗的問題；而方形晶胞之導通電阻值雖較線型晶胞小，但較慢的切換速度使其在高頻應用上被受限制，並且此種晶胞亦存在專利問題。
本文研究提出新式晶胞設計「羽翼狀晶胞」為結合方形晶胞與線型晶胞的光罩設計，我們利用模擬軟體ISE-TCAD，針對元件之製程及電性進行模擬及研究分析。使用羽翼狀晶胞光罩之設計，其導通電阻值可以較方形晶胞減少2.4%~2.6%，而閘極電荷則可減少20.4%。

Power devices were proposed in 1950’. With the increasing of consumed electronic products, the development and applications also increase, especially Power MOSFETs. However, how to design an excellent device and an efficient and accurate measurement is a research point.
Power MOSFETs always used as a switching for circuit applications. It requires high switching speed and low power loss. Present, the most often mask designs are linear cell and square cell. They have their own drawbacks. Although switching speed of linear cell is faster, the larger on resistance results in larger power loss for applications. On resistance of square cell is smaller, the lower switching speed leads to a limitation for high frequency applications. In addition, there is a patent problem for square cell.
In this study, we proposed a new cell design, wing cell, which combines linear cell and square cell. We study and analyze the process and characteristics by ISE-TCAD. With linear cell design, on resistance and gate charge of the device can be reduced 2.4%~2.6% and 20.4% compares with square cell.

第一章 前言
1-1 功率元件之發展及背景
1-2 功率金氧半場效應電晶體之元件特性及量測
1-2.1元件直流特性
導通電阻值
汲源極崩潰電壓
閘極絕緣層崩潰電壓
啟閘值電壓
二極體順向電壓
安全工作區
1-2.2元件交流特性
累增崩潰
閘極電荷
電容
切換延遲時間與上升/下降時間
二極體逆向再復合
第二章 元件模擬及製程
2-1模擬方法簡述
2-2製程步驟及元件參數設定
第三章 結果及分析討論
第四章 結論
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