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研究生:曾信達
研究生(外文):Hsin-Da Tseng
論文名稱:碲化鉍奈米線之製備與特性
論文名稱(外文):Fabrication and Properties of Bismuth Tellride Nanowire
指導教授:施仁斌
指導教授(外文):j.b.shi
學位類別:碩士
校院名稱:逢甲大學
系所名稱:電子工程所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
畢業學年度:94
語文別:中文
論文頁數:38
中文關鍵詞:螢光光譜儀紫外光可見光譜儀碲化鉍奈米線
外文關鍵詞:nanowireBismuth tellridePLUV
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我們將兩種不同的孔徑分別為硫酸陽極氧化鋁模板30 nm和草酸陽極氧化鋁模板60 nm浸入包涵Bi3+和HTeO2+的溶液中,使用電化學沈積的方法於陰極端將碲化鉍奈米線填充入陽極氧化鋁模的奈米孔洞內。
使用掃瞄式電子顯微鏡可觀測碲化鉍奈米線陣列的高有序填充狀況,X光繞射儀則指出其奈米線為(110)較優先的結晶方向,能量散射光譜儀做微區域元素分析顯示其元素比非常接近2:3,最後分別用用紫外光-可見光光譜儀和光致螢光光譜儀來了解其光學特性。
Bi2Te3 nanowires with two diameters of 30 nm and 60 nm have been assembled into the nanopores of alumina template by electrodeposition in the solution containing Bi3+ and HTeO2+ with porous alumina template as a cathode. Scanning electron microscopy indicates that the ordered Bi2Te3 nanowire arrays are entirely filled. X-ray diffraction result shows that the as-synthesized nanowires are crystalline and have a highly (110) preferential orientation. Energy dispersive spectrometer analysis observation shows the composition ratio is very close to 2 : 3. The comparisons of the two size Bi2Te3 nanowire arrays (30 nm and 60 nm) were observed by the measurements of photoluminescence (PL) and ultraviolet-visible absorption spectroscopy (UV-vis), respectively.
致謝 i
中文摘要 ii
Abstract iii
目錄 iv
圖目錄 vi
表目錄 viii
第一章 緒論 1
1.1 前言……………………………………………………………………………….1
1.2研究動機與目的 2
第二章 文獻回顧 4
2.1奈米科技的定義與特性 4
2.1.1量子局限效應(Quantum confinement effect) 4
2.1.2量子干涉效(Quantum Interference Effect) 5
2.1.3表面效應(Surface Effect) 5
2.1.4量子穿隧效應(Quantum Tunneling Effect) 6
2.2多孔性結構之氧化鋁模板 6
2.2.1氧化鋁奈米多孔模板的結構特徵 6
2.2.2氧化鋁奈米多孔模板的成長機制 7
2.2.3氧化鋁奈米多孔模板的製備變因 10
2.2.4 陽極處理近年來在製作奈米級多孔模板上的應用 13
2.3熱電材料應用與介紹 14
2.3.1 塞貝克效應(Seebeck Effect) 15
2.3.2 珀爾帖效應(Peltier Effect) 15
2.3.3 湯姆遜效應(Thomson Effect) 15
2.3.4 熱電元件功作原理 15
2.3.5 熱電材料應用之優點 16
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