臺灣博碩士論文加值系統

本碩士論文主要是研究由量子點中偏離圓心之雜質能階與躍遷率，於拋物線位能及高電場之作用下之效應，並計算量子點之基態及第一激發態之雜質能階及其間之躍遷率。

我們發現掺雜雜質的量子點，其束縛能跟雜質位置、侷限位能和外加電場也有非常密切的關係。本文計算所得的雜質能階與躍遷率之結果，證明了改變電場強度會等價於雜質位置的改變。

We theoretically estimate the binding energies and transition rates of an off-centered impurity in quantum dots define by a parabolic confining potential and under high electric fields. The ground-state and the first-excited-state energies of the impurity located anywhere in the dot along the field direction has been estimated by use of one-component variational approach.

Our results show that the impurity level is strongly dependent on the confinement strength of the QD, the impurity location, and the strength of electric field. The action of the field is equivalent to shift the impurity position.

摘 要
Abstract
謝 誌
目 錄
圖 目 錄
符 號 表
第一章 緒論
1-1 回顧
1-2 量子點特性
1-3 量子點應用與製造方法
1-4 研究動機與目的
第二章 模型
第三章 理論
3-1 變分法
3-2 變分法的應用
3-3費米黃金定律
第四章 結果與討論
第五章 結論
附 錄
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