臺灣博碩士論文加值系統

本篇論文主要在探討積體電路中被動元件電阻的匹配影響，由於在類比電路上，電路設計使用電阻是無法避免的。因此，電阻的精確度就影響了類比電路A/D或D/A Converter的可解析位元數及在具有多重任務處理功能上之電壓偏移和電流偏移的問題。其電路元件的匹配效果，相較之下就非常重要。本論文是利用p+ Poly non-silicide做為研究的對象，使用台積電( TSMC) 0.18μm CMOS製程技術， 將研究的電阻元件佈局規劃在1.44*1.44mm2的IC中。一般類比電路講究佈局的對稱性，其內部電阻架構是利用8*8的元件陣列在6*6之輸入/出Pad內，此四對電阻元件的變異影響有寬度、長度、contact number。此研究在TSMC 0.18μm RFCMOS Spice Model內並沒有提供，其研究的應用可在A/D或D/A轉換器的類比電路上。

The thesis is mainly discussed the passive resistor device matching effect on the integrated circuit. Though design the analog circuit that use the resistor is unavoidable. Hence the precision of the resistor will effects the resolution bit of the analog to digital or digital to analog converter and the multi-tasking process that have voltage offset and current offset problems. It is very important to match the effect of the circuit. This paper uses the p+ poly non-silicide to act as the study of the target and to make use of the TSMC 0.18μm CMOS process technology and to use this resistor device layout on the 1.44*1.44mm2 IC. In generally, the analog circuit to be particular about symmetry and the structure of the resistor inside use the device array of the 8*8 and layout in the I/O pad of the 6*6. These four pairs resistors has include variations of the width, length and contact number. This study doesn’t provide in the TSMC spice model and can use this to apply in the analog circuit, analog to digital converter or digital to analog converter.

目 錄
摘 要 4
第一章 12
概論 12
1-1動機 13
第二章 14
半導體元件不匹配的因素 14
2-1隨機不匹配 15
2-2系統上的不匹配 15
2-3在多晶矽蝕刻率上的變異 16
2-4多晶電阻的不匹配分析 16
2-5在數位類比轉換器上其不匹配的影響 17
第三章 18
P+ Poly 電阻的元件匹配物理模型與特性 18
3-1 P+ Poly 電阻大小特性 18
3-2測試架構與量測程序 18
3-3 P+ Poly 電阻模型與等效電路 19
3-4 P+ Poly 電阻的介紹 19
3-5 P+ Poly 電阻的平面圖(floor plane) 20
第四章 21
實驗的步驟和量測與結果分析 21
4-1 HP4156 儀器的直流量測 21
4-2 HP4156 儀器與Probe Station的量測步驟 22
4-3 結果與分析 23
4-3-1 卡方(Chi-square) 23
4-3-2 線性迴歸 25
4-3-3 分析 27
第五章 29
結論 29
5-1 未來與展望 29
參考文獻 30



表目錄

表 3.1 P+ Poly電阻的特性大小 32
表 3.2 P+ poly 沒有silicide的參數 32
表 4.1 HRSMU的電壓範圍、解析度與精確度 32
表 4.2 HRSMU的電流範圍、解析度與精確度 33
表 4.3 各個IC分別偏壓在0.5V、2.5V、5V時的圖形整理表格 34
表 4.4 額外的迴歸直線統計值 35
表 4.5 元件命名編號數值表 35
表 4.6 IC的各區塊之不批配百分比 (1) 36
表 4.6 IC的各區塊之不批配百分比 (2) 37























圖目錄

圖2.1 在元件陣列中的蝕刻率變異 38
圖2.2 未連接使用的空殼樣本電阻 39
圖2.3 RA 和RB的差 40
圖2.4 元件間的距離與匹配關係，偏壓在0.5伏 40
圖2.5 元件間的距離與匹配關係，偏壓在2.5伏 41
圖2.6 元件間的距離與匹配關係，偏壓在5伏 41
圖2.5 IC整體規劃 42
圖2.6三位元數位類比轉換器 42
圖3.1 P+ Poly 電阻的規劃 43
圖3.2 橫截面圖和電路模型 43
圖3.3 common centroid placement 44
圖3.4區塊內的元件架構與電阻的長寬比 44
圖3.5電阻内的結構與其DRC( Design Rule Check)的規則限制 45
圖4.1 IC腳位量測圖 45
圖4.2 IC內Block A的元件編號 46
圖4.3 IC內Block B的元件編號 46
圖4.4 IC內Block C的元件編號 47
圖4.5偏壓在0.5伏時，IC1的Block A電阻值 47
圖4.6偏壓在0.5伏時，IC1的Block B電阻值 48
圖4.7偏壓在0.5伏時，IC1的Block C電阻值 48
圖4.8偏壓在0.5伏時，IC2的Block A電阻值 49
圖4.9偏壓在0.5伏時，IC2的Block B電阻值 49
圖4.10偏壓在0.5伏時，IC2的Block C電阻值 50
圖4.11偏壓在0.5伏時，IC3的Block A電阻值 50
圖4.12偏壓在0.5伏時，IC3的Block B電阻值 51
圖4.13偏壓在0.5伏時，IC3的Block C電阻值 51
圖4.14偏壓在0.5伏時，IC4的Block A電阻值 52
圖4.15偏壓在0.5伏時，IC4的Block B電阻值 52
圖4.16偏壓在0.5伏時，IC4的Block C電阻值 53
圖4.17偏壓在0.5伏時，IC5的Block A電阻值 53
圖4.18偏壓在0.5伏時，IC5的Block B電阻值 54
圖4.19偏壓在0.5伏時，IC5的Block C電阻值 54
圖4.20偏壓在0.5伏時，IC6的Block A電阻值 55
圖4.21偏壓在0.5伏時，IC6的Block B電阻值 55
圖4.22偏壓在0.5伏時，IC6的Block C電阻值 56
圖4.23偏壓在0.5伏時，IC7的Block A電阻值 56
圖4.24偏壓在0.5伏時，IC7的Block B電阻值 57
圖4.25偏壓在0.5伏時，IC7的Block C電阻值 57
圖4.26偏壓在2.5伏時，IC1的Block A電阻值 58
圖4.27偏壓在2.5伏時，IC1的Block B電阻值 58
圖4.28偏壓在2.5伏時，IC1的Block C電阻值 59
圖4.29偏壓在2.5伏時，IC2的Block A電阻值 59
圖4.30偏壓在2.5伏時，IC2的Block B電阻值 60
圖4.31偏壓在2.5伏時，IC2的Block C電阻值 60
圖4.32偏壓在2.5伏時，IC3的Block A電阻值 61
圖4.33偏壓在2.5伏時，IC3的Block B電阻值 61
圖4.34偏壓在2.5伏時，IC3的Block C電阻值 62
圖4.35偏壓在2.5伏時，IC4的Block A電阻值 62
圖4.36偏壓在2.5伏時，IC4的Block B電阻值 63
圖4.37偏壓在2.5伏時，IC4的Block C電阻值 63
圖4.38偏壓在2.5伏時，IC5的Block A電阻值 64
圖4.39偏壓在2.5伏時，IC5的Block B電阻值 64
圖4.40偏壓在2.5伏時，IC5的Block C電阻值 65
圖4.41偏壓在2.5伏時，IC6的Block A電阻值 65
圖4.42偏壓在2.5伏時，IC6的Block B電阻值 66
圖4.43偏壓在2.5伏時，IC6的Block C電阻值 66
圖4.44偏壓在2.5伏時，IC7的Block A電阻值 67
圖4.45偏壓在2.5伏時，IC7的Block B電阻值 67
圖4.46偏壓在2.5伏時，IC7的Block C電阻值 68
圖4.47偏壓在5伏時，IC1的Block A電阻值 68
圖4.48偏壓在5伏時，IC1的Block B電阻值 69
圖4.49偏壓在5伏時，IC1的Block C電阻值 69
圖4.50偏壓在5伏時，IC2的Block A電阻值 70
圖4.51偏壓在5伏時，IC2的Block B電阻值 70
圖4.52偏壓在5伏時，IC2的Block C電阻值 71
圖4.53偏壓在5伏時，IC3的Block A電阻值 71
圖4.54偏壓在5伏時，IC3的Block B電阻值 72
圖4.55偏壓在5伏時，IC3的Block C電阻值 72
圖4.56偏壓在5伏時，IC4的Block A電阻值 73
圖4.57偏壓在5伏時，IC4的Block B電阻值 73
圖4.58偏壓在5伏時，IC4的Block C電阻值 74
圖4.59偏壓在5伏時，IC5的Block A電阻值 74
圖4.60偏壓在5伏時，IC5的Block B電阻值 75
圖4.61偏壓在5伏時，IC5的Block C電阻值 75
圖4.62偏壓在5伏時，IC6的Block A電阻值 76
圖4.63偏壓在5伏時，IC6的Block B電阻值 76
圖4.64偏壓在5伏時，IC6的Block C電阻值 77
圖4.65偏壓在5伏時，IC7的Block A電阻值 77
圖4.66偏壓在5伏時，IC7的Block B電阻值 78
圖4.67偏壓在5伏時，IC7的Block C電阻值 78
圖4.68 電壓在0~5伏時，電壓與電阻在Block A之VCR關係 79
圖4.69電壓在0~2.5伏時，電壓與電阻在Block A之VCR關係 79
圖4.70電壓在0~5伏時，電壓與電阻在Block B之VCR關係 80
圖4.71電壓在0~2.5伏時，電壓與電阻在Block B之VCR關係 80
圖4.73電壓在0~2.5伏時，電壓與電阻在Block C之VCR關係 81
圖4.74 區塊B與區塊D的電壓與電流變化量之VCR關係 82
圖4.75 區塊B與區塊D的電壓與電流之VCR關係 82
圖4.77元件9~元件16，在Block D內VCR關係 83
圖4.78元件17~元件24，在Block D內VCR關係 84
圖4.79元件25~元件32，在Block D內VCR關係 84
圖4.80元件1~元件32，在Block D內VCR關係 85
圖4.81 各電阻的標準差 85
圖4.82 各電阻的不匹配百分比 86
圖4.83各電阻的片電阻值 86

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