本篇論文中，我們用硒化鉛量子點單層薄膜做了一系列針對溫度作變因的相關研究。將乾燥的硒化鉛量子點充分溶於甲苯中，控制此硒化鉛溶液在適當之濃度，接著取硒化鉛溶液取一滴的量於一片乾淨的基板表面上，我們可以在基板表面上得到二維的單層自組裝硒化鉛薄膜，藉由控制溫度之高低溫變化，我們發現硒化鉛單層自組裝薄膜會有不同的成長趨勢。在低溫時，我們可以見到由硒化鉛所形成的二維島狀薄膜呈現出碎形的形貌，而當硒化鉛量子點在高溫的成長環境下，所形成的二維島嶼則是邊界圓滑的島狀形貌，此高溫的定義則約在100℃左右。由原子力顯微鏡掃描所得到的圖形依照硒化鉛分佈的多寡分類，可以看出硒化鉛量子點從成核(Nucleation)漸漸聚集到薄膜成長(Film Growth)的現象，所形成的二維島嶼高度在10.5nm左右。而硒化鉛單層自組裝薄膜的表面在高溫成長條件下其均勻度更佳，進而使我們能夠在平坦的薄膜表面上利用原子力顯微鏡見到硒化鉛自組裝薄膜的結構是屬於六角最密堆積結構。

In this thesis, we research for the growth of one monolayer of PbSe quantum-dot thin film. The PbSe spherical quantum dots(SQD) were dispersed in toluene solution and kept the solution in proportionate concentration. Subsequently, deposited a drop of solution onto a fresh surface at different temperatures. We found the growths of one monolayer of PbSe quantum-dot thin film have different morphology. At room temperature, the PbSe SQD islands reveal dendritic fashion. As we raise the temperature of substrate above 100℃ for deposition, the PbSe SQD islands become rounded and the surface also become more flat. Consequently, we observed the the superlattice structure is hexagonal closed-packed(HCP). We have studie the growth behavior by using atomic force microscope. The PbSe SQD starts to nucleate, and finally grow films. The thickness of the PbSe SQD monolayer is 10~11nm.

空白頁……………………………………………………………………………………i
書名頁…………………………………………………………………………………...ii
審核頁…………………………………………………………………………………..iii
授權頁…………………………………………………………………………………..iv
誌謝辭…………………………………………………………………………………...v
中文摘要………………………………………………………………………………..vi
英文摘要…………………………………………………………………………….....vii
目次…………………………………………………………………………………....viii
圖表目次………………………………………………………………………………...x

第一章、 簡介
1-1 前言............................................................................................................................1
1-2 薄膜成長機制............................................................................................................3
1-3 薄膜成長的三大模式................................................................................................5
1-4 影響薄膜成長之因素................................................................................................7

第二章、 實驗部分
2-1 掃描探針顯微技術(Scanning Probe Microscopy)簡介............................................9
2-2 原子力顯微鏡(Atomic Force Microscope)之儀器原理 .......................................11
2-3 原子力顯微鏡(Atomic Force Microscope)之儀器裝置.........................................13
2-4 實驗步驟及方法......................................................................................................15

第三章、 實驗結果與討論
3-1 Capping Agent的影響..............................................................................................19
3-2 低溫成長情形..........................................................................................................21
3-3 高溫成長情形
3-3-1 95。C成長........................................................................................................24
3-3-2 100。C成長......................................................................................................27
3-3-3 110。C成長......................................................................................................30
3-3-4 120。C成長......................................................................................................33
3-3-5 140。C成長......................................................................................................35
3-3-6單層硒化鉛量子點薄膜之組成結構分析...........................................................37

第四章、 結論...............................................................................................................39

參考書目……………………………………………………………………………….40

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