參考文獻
[1] C. Y. Chang, “ULSI Technology,” pp. 215~241,1996.
[2] 莊達人 編著,VLSI 製造技術,高立圖書出版社,台北,台灣,pp. 234-357,2000。
[3] J. P. Lu, “Solution precursor chemical vapor deposition of titanium oxide thin films,” Thin Solid Films, p. 204, 1991.
[4] S. Schiller, “Reactived d.c. sputtering with the magnetron-plasmatron for tantalum pentoxide and titanium dioxide films,” pp. 369-375, 1979.
[5] H. J. Frenck, “ Deposition of TiO2 thin films by plasma enhanced
decomposition of tetraiopropya titanate,” pp. 327-335, 1991.
[6] E. V. Astrova, and V. A. Tolmachev, “Effective refractive index and
composition of oxidized porous silicon films,” pp.142-148, 2000.
[7] Z. Knittl, “Optics of thin films,” pp.102-124, 1976.
[8] A. C. Adams, “Solid State Technology,” p.135, 1983.
[9] A. C. Adams and F. B. Alexander, C. D. Capio, and T. E. Smith, J. Electrochem, “Solid-state Science and Technology,” p. 1545, 1981.
[10] M. Konuma, “Film Deposition by Plasma Techniques,” pp. 166,1992.
[11] A. C. Adams, “Solid State Technology,” p. 135, 1983.
[12] W.D. Brown, “Thin Solid Films,” p. 73, 1990.
[13] T. F. Hiroyuki, “Electronic Properties of Interface between Si and TiO2 Deposited at Very Low Temperature,” pp. 1288-1291, 1986.
[14] T. Fuyuki and H. Matsunami, “Electronic Properties of Interface between Si and TiO2 Deposited at Very Low Temperature,” Janpanese Journal of Applied Physics, pp. 1288-1291, 1986.
[15] K. S. Yeung and Y. W. Lan, “A simple chemical vapor deposition
method for depoiting thin TiO2 films,” Thin Solid Films, pp.169-178, 1983.
[16] K. S. Yeung and Y. W. Lan, “A simple chemical vapor deposition
method for depoiting thin TiO2 films,” pp. 169-178, 1983.
[17] 楊天生,薄絕緣層-氧化層,材料會訊,第四卷第一期,pp. 2-5,1996。
[18] 盧以謙,二氧化矽(SiO2)在積體電路中的應用,材料會訊,第四卷第一期,pp.4-7,1996。
[19] A. F. Schuegraf, “Hole Injection SiO2 Breakdown Model for Very Low Voltage Lifetime Extrapolation,” IEEE. Vol. 41, p. 1124, May. 1994.
[20] F. Schuegraf, C. C. King, and C. Hu, “Ultra-thin Silicon Dioxide
Leakage Current and Scaling Limit,” p. 245, 1992.
[21] 王建義 編譯,薄膜工程學,全華科技出版,台北,台灣,pp. 234-357,2004。
[22] 施敏 原著,張俊彥 譯著,半導體元件物理與製作技術,第三版,高立圖書有限公司,台北,台灣,pp. 3-7~3-10,2001。
[23] 蔡國強,以高密度電漿化學氣相沉積系統製程非晶相氫化碳化
矽模之研究,豪微米通訊,第九卷第一期,pp. 6-11,2002。
[24] 薛漢鼎,沉積二氧化矽薄膜之化學氣相控制,奈米通訊,第十一卷第一期,pp. 21-30,2004。
[25] S. Liao, and S. C. Lee, “Water-induced room-temperature oxidation of Si–H and–Si–Si–bonds in silicon oxide,” Appl. Phys. Lett, Vol. 80, pp. 1171-1176, 1996.
[26] 陳威宏,n 型氮化鎵金氧半場效電晶體元件之製作與特性研究,
國立中央大學光電科學研究所碩士論文,2003。
[27] 羅時湧,低介電常數材料之製程整合研究,國立雲林科技大學電子資訊工程研究所碩士論文,2003[28] 劉柏村,低介電常數薄膜之檢驗與製程整合技術探討,電子與材料雜誌,第17期,p. 95,2003。
[29] L. peters, “Pursuing the Perfect Low-k Dielectric,” p. 64,1998.
[30] T. Tatsumi,Y. Matsubara,and T. Horiuchi, “Application of Fluorinated Amorphous Carbon Thin Film for Low Dielectric Constant Interlayer Dielectrics,” Appl. Phys. Lett,Vol. 37, p. 1809, 1998.
[31] 洪昭南,郭有斌,電漿反應器與原理,化工技術雜誌,第9卷,第10期,p. 8,2000。[32] C. R. Crowell and S. M. Sze,“Solid-State electron,” p. 673, 1965.
[33] M. Hoffmann, P. Kopka and E. Voges, “Low-loss fiber-matched
low-temperature PECVD waveguides with small-core dimensions for optical communication systems”, IEEE. vol. 9, pp. 1238-1240, 1997.
[34] T. Miya, “Silica-based planar lightwave circuits: passive and
thermally active devices”, IEEE. vol. 6, pp.38-45, 2000.
[35] J. L. Jakel, C. E. Rice and J. J. Veselka,“Proton exchange for
high-index waveguides in LiNbO3,” Appl. Phys. Lett, vol. 41, pp.
607-608, 1982.
[36] R. C. Alferness, L. L. Buhl, U. Koren, B. I. Miller, M. Young and T. L. Koch,“Vertically coupled InGaAsP/InP buried rib waveguide
filter,” Appl. Phys. Lett. vol. 59, pp. 2573-2578, 1991.
[37] S. M. Sze,“Physics of Semiconductor Devices,”p. 403, 1983.