臺灣博碩士論文加值系統

本論文使用化學濕式蝕刻的技術，對磷化鋁銦鎵(AlGaInP)發光二極體進行其視窗層之表面粗化，提昇發光二極體外部出光效率，並有效增加發光二極體內部產生的光射出，而減少光的全反射，結果發現在注入電流20 mA電壓為2.15 V，其增加了30 %的出光效率。
研究AlGaInP發光二極體的光電特性，發現視窗層表面粗糙度從48 nm~151 nm時，與粗化前之外部出光效率相比，在注入電流20 mA電壓為2.15 V其增加外部出光效率從7%到31%，順向電壓可以控制在 2.4 V以下，而漏電流也可以控制在0.1 nA以下，可見粗化並不會影響電流、電壓特性。值得一提的是將元件經過200個小時50 mA老化壽命可靠性試驗，發現元件的亮度和順向電壓未超過基本值的20%範圍。

A surface-roughing technique, employed by chemical wet etching, was studied for the light extraction efficiency of the AlGaInP light emitting diodes (LEDs). The roughing technique used in this dissertation had been effectively reduced the total internal reflection in the LED structure. It results in ~ 30% increasing of external quantum efficiency at 20 mA.
The detailed electrical and optical properties of the AlGaInP LEDs were investigated. It was found that the LEDs with roughened surface 48 nm to 151 nm present the output efficiency 7% to 31% at 20 mA as compared with LED with flat surface. The forward voltage was controlled under 2.4 V and current leakage was controlled under 0.1 nA, indicating the absence of the degradation in the electrode contacts. Meanwhile, a reliability test was performed. The deviation of the decrease in light intensity and forward voltage was found within 20% after operating at 50 mA after 200 hours. The test shows that the surface-roughing technique has no significant effect on the device reliability.

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誌謝…………………………………………………………………Ⅰ
摘要…………………………………………………………………Ⅱ
Abstract……………………………………………………………Ⅲ
目錄…………………………………………………………………Ⅳ
圖目錄………………………………………………………………Ⅵ
第一章 緒論
1-1 發光二極體歷史演進簡介……………………………………1
1-2 改善發光二極體外部出光效率的方法簡介…………………2
1-2-1 使用厚的窗口層作電流分佈………………………………3
1-2-2 有表面織狀結構或粗糙面…………………………………4
1-2-3 幾何形狀改變之結構………………………………………5
1-2-4 半圓形球面及掩埋半圓柱鏡面……………………………6
1-3 研究動機………………………………………………………6
第二章 發光二極體理論簡介
2-1 發光二極體發光原理簡介……………………………………7
2-2 提高外部量子效率之理論模型………………………………8
2-3 發光二極體之光取出效率計算 ……………………………10

第三章 元件製程與特性量測
3-1 粗化元件製作 ………………………………………………14
3-1-1 磷化鋁銦鎵試片之磊晶結構 ……………………………14
3-1-2 試片之清洗 ………………………………………………14
3-1-3 P型金屬接觸電極之製作…………………………………15
3-1-4 表面粗化 …………………………………………………16
3-1-5 背面N型金屬接觸電極之製作……………………………17
3-2 元件切割 ……………………………………………………18
3-3 元件打線與封裝 ……………………………………………18
3-4 元件特性量測 ………………………………………………19
第四章 結果與討論
4-1 前言 …………………………………………………………20
4-2 改變時間參數分析表面粗糙度 ……………………………20
4-3 光強度分析 …………………………………………………22
4-4 粗化GaP之光場分佈分析……………………………………23
4-5 經粗化後發光二極體之壽命測試 …………………………24
第五章 結論………………………………………………………25
參考文獻 …………………………………………………………27

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