臺灣博碩士論文加值系統

在本論文中，我們以有機金屬氣相磊晶系統成長III-V-N化合物半導體InGaAsN與InGaPN並分析其材料特性後製作光電元件。首先以高解析度X射線繞射儀、光調制光譜儀、光激發螢光光譜儀及霍爾量測等量測設備分析成長材料之特性。之後將InGaAsN應用在光檢測器以及高載子移動率電晶體等光電元件上藉以改進元件特性。
首先我們藉由霍爾量測以及持續性光導的探討來分析InGaAsN中氮對電特性的影響。與沒有摻雜氮的試片比較，摻雜N之後造成的晶格缺陷會使得電子移動率大幅降低。藉由不同溫度下量測不同氮含量的持續性光導特性，我們推斷N在InGaAsN中DX-type的深能階缺陷以及氮摻入之後伴隨著的缺陷主宰了持續性光導的特性。更進一步研究也顯示此種氮導致的局部化缺陷可藉由高溫下的回火有效抑制。
接下來我們針對InGaPN的局部化載子特性以及光特性做進行的研究。我們發現N摻入時造成PL光譜的紅移現象代表了能隙隨著氮含量的增加而縮減，而PL光譜的半高寬的增加是由於非輻射複合中心的增加。在變溫PL光譜中發現的S形特性表示被侷限在局部化能階中的載子藉由溫度上升的過程中獲得能量之後躍遷至更高的束縛激子能階。而光調製光譜也更進一步證明了此現象。經過進一步高溫快速回火的實驗之後，此局部化載子的現象將會被消除，此結果也證明了回火可以降低材料的缺陷濃度以及改進試片品質。
在元件應用方面，為了製作高效能光檢測器我們以InGaAsN為吸光層成功製作出調變型金半金光檢測器。並由電容電壓量測證明載子被良好的侷限在異質接面上。藉由熱載子理論以及暗電流量測我們推斷出，當N型AlGaAs的載子提供層電子濃度分別為5x1016, 9x1016, 2x1017 及 6x1017 cm-3 時等效的蕭基能障推算分別為0.61, 0.72, 0.50 及 0.23 eV。更進一步量測可得到當N型AlGaAs的載子提供層電子濃度分別為5x1016, 9x1016及 2x1017 cm-3時光響應度分別為0.02, 0.14 及 0.22 A/W。
在p-i-n光檢測器的應用上，我們製作了應變的InGaAsN/GaAs多重量子井p-i-n光檢測器並探討不同氮含量對元件的影響。我們發現暗電流的大小和多重量子井中的應變力有著強烈的相依性，也就是和主動層中銦及氮的含量有關。藉由量測表面披覆良好的元件的電流電壓曲線圖，我們發現多重量子井的差排的量強烈影響了暗電流的大小。進一步觀察改變偏壓與光響應度之間關係的結果也可觀察到光檢測器的內部增益現象。  
最後我們利用InGaAsN做為通道層成功製作出高載子移動率電晶體。藉由GaAs和InGaAsN中很大的導帶不連續的特點其高載子移動率電晶體之閘極可達到7.9伏特電壓擺幅。然而由於氮的摻入造成通道內載子移動率的降低，高載子移動率電晶的轉導值大小也被限制住了。藉由不同溫度下的回火來改進元件特性後可以發現，七百度回火可以得到較佳的元件特性。我們也藉由霍爾量測去探討通道中氮的含量對於元件特性的影響。儘管元件增益相對來說較低，但其極佳的線性度仍然極有潛力應用在以InGaAsN為基礎的光電積體電路中。
本論文的目標是用有機金屬氣相沈積系統去成長高品質的InGaAsN及InGaPN四元化合物半導體；更重要的是把InGaAsN這個四元化合物半導體應用在高效能光檢測器及高線性度的高載子移動率電晶體，來作為在光纖通訊裡收發器模組的主要元件，進而對光纖通訊的發展做出重要的貢獻。

In this dissertation, the III-N-V alloys and their applications on optoelectronic devices have been grown by metal organic vapor phase epitaxy (MOVPE). Several material characterization techniques, such as high resolution X-ray diffraction (HRXRD), modulation photoreflectance (PR) spectrum, photoluminescence (PL) and Hall measurement have been performed to characterize the crystal quality of these epitaxial layers. The high electron mobility transistors (HEMTs) and photodetectors (PDs) were then fabricated and characterized by utilizing the novel optoelectronic material InGaAsN.
The effects of nitrogen incorporation on the electronic properties of InGaAsN epilayers have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. Compared with the N-free sample, the mobility of the InGaAsN samples quenched significantly due to the lattice defects induced by the small amount of nitrogen incorporation during growth. From the analysis of temperature-dependent PPC decay kinetics of samples with different nitrogen content, we speculate that the effect of PPC in n-type InGaAsN can be ascribed to DX-type deep centers and nitrogen-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that nitrogen-induced localization can be quenched through thermal annealing.
A detailed study of the localized carrier effect and optical characterization of the novel dilute-nitride InGaPN films has been reported. With nitrogen incorporation, the PL peak red shifts. The bandgap reduces and the line width broadening increases due to the increasing non-radiative centers. The S-shape in temperature dependence of the PL spectra shows a considerable number of carriers detrap from localized states to higher bound exciton states as the increasing temperature. The PR spectrum is used to confirm the nitrogen induced localization. Furthermore, this localization phenomenon observed in low temperature PL no longer exists after RTA process at 5000C. This result suggests that the crystal quality is improved significantly by thermal treatment.
For the device application, InGaAsN-based photodetectors were achieved. InGaAsN metal-semiconductor-metal photodetectors (MSM-PDs) with modulation-doped heterostructures have been successfully fabricated. It was found carriers were well confined from capacitance-voltage (C-V) measurements. Using thermionic emission theory and measured dark currents, it was found that the effective Schottky barrier heights were 0.61, 0.72, 0.50 and 0.23 eV for the MSM-PDs with Al0.2Ga0.8As cap layer doping Nd= 5x1016, 9x1016, 2x1017 and 6x1017 cm-3, respectively. Furthermore, it was found that the measured responsivities were 0.02, 0.14 and 0.22 A/W and for the MSM-PDs with Nd= 5x1016, 9x1016 and 2x1017 cm-3, respectively.
For the application of p-i-n photodetectors, the reverse leakage current in strained InGaAsN/GaAs multi quantum well (MQW) p-i-n structures has been measured for a range of different nitrogen incorporation. The magnitude of the leakage current is found to be dependent on the average strain of the MQW, the incorporation of In and N in the active layer. The current-voltage (I-V) curves of the surface-passivated devices shows that misfit dislocations from MQW structure determine the dark leakage current. To investigate the internal gain mechanism of the p-i-n structures, bias-dependent spectral responsivities have been also discussed.
Finally, InGaAsN-based high electron mobility transistors (HEMTs) using InGaAsN as the channel layer and base material have been fabricated. An extremely large gate-voltage swing (GVS) up to 7.9 V for HEMTs can be achieved by utilizing the large conduction band offset between the GaAs spacer layer and the InGaAsN channel layer. However, the poor mobility (2200 cm2/vs) in channel and current density as a result of nitrogen-induced electrically active defects limit the maximum gm (65 ms/mm) for HEMTs. Attempts using various annealing temperatures have demonstrated that better device characteristics can be obtained via rapid thermal annealing at 700℃. In this study, we investigate the effect of nitrogen-induced traps on the basis of mobility and carrier concentration and device characterizations of HEMTs. The improvement in GVS in the annealed samples is also discussed. Despite the relatively poor gain, InGaAsN HEMTs with excellent linearity performance after proper thermal annealing are expected to be compatible for novel InGaAsN-based optoelectronics integral circuits (OEICs).
The aim of this dissertation is to grow high quality InGaAsN and InGaPN quaternary alloys by MOVPE; the most important issue is the application on the photodetectors with low dark noise and high responsitivity and the HEMTs with high GVS for use as the principal devices in the transceiver module and thus contributes to the development of optical fiber communication.

Contents
Abstract (in Chinese) …………………………………………………………....… i
Abstract (in English) …………………………………………………………...….. ii
Contents ………………………………………………………………………….…. vii
Table Captions ……………………………………………………………………… xi
Figure Captions …………………………………………………………………...... x
Chapter 1. Introduction
1.1 Introduction …………………………………………………………….…….. 1
1.2 Outline of the dissertation ………………………………………………….... 5
Chapter 2. MOVPE System and Related Material
Characterization Techniques
2.1 Metal Organic Vapor Phase Epitaxy (MOVPE) system …………………… 14
2.2 High resolution X-ray diffraction (HRXRD) ………………………………. 18
2.3 Photoluminescence (PL) ……………………………………………………... 20
2.4 Modulation spectroscopy …………………………………………………….. 21
2.5 Summary………………………………………………………………………. 23
Chapter 3. Electronic Properties in InGaAsN Quaternary Alloys
3.1 Introduction…………………………………………………….. ……………. 31
3.2 Annealing effects in InGaAsN………………………………………………... 31
3.3 Experimental detail …………………….…………………………………….. 32
3.4 Results and discussion…………….. …………………………………………. 33
3.5 Summary………………………………………………………………. ……... 43
Chapter 4. Investigation of Structural and Optical Properties in InGaPN
4.1 Introduction ……………………………………….………………………….. 52
4.2 Localized carrier in InGaPN………………………...……………………...... 52
4.3Effect of nitrogen incorporation on spontaneous ordering in InGaPN……...53
4.4 Experimental detail………………………… ……………………….……….. 54
4.5 Results and discussion…………..….. …………………………………………54
4.6 Summary ………………………………………………………………...……. 62
Chapter 5. InGaAsN-Based Photodetectors
5.1.1 Introduction of Metal-Semiconductor-Metal Photodetectors………..…. 77
5.1.2 Transparent Electrode ……………………………………………………..78
5.1.3 Experimental detail …………………………………………………..…… 78
5.1.4 Current transport mechanisms of MSM contacts …………………….….79
5.1.5 InGaAsN MSM-PDs with NiO/Au Schottky contacts…………………….82
5.1.6 InGaAsN MSM photodetectors with ITO Schottky contacts…………….84
5.1.7 InGaAsN MIS photodetectors……………………………………………...84
5.1.8 Summary………………………………………………………………….. ..87
5.2 InGaAsN Modulation-doped MSM-PDs…………………………………….87
5.2.1 Introduction…………………………………………………………………87
5.2.2 Experimental detail........................................................................................89
5.2.3 Results and Discussions……………………………………………………..91
5.2.4 Summary……………………………………………………………….……97
5.3 InGaAsN-based p-i-n Photodetectors…………………………………….….97
5.3.1 Introduction…………………………………………………………….…...97
5.3.2 Results and Discussion……………………………………………………..100
5.3.3 Summary……………………………………………………………………101
Chapter 6. Improvement in Linearity of Novel InGaAsN-Based High Electron Mobility Transistors
6.1 Introduction …………………………………………………………………. 127
6.2 Experimental detail………………. ………………………………………… 128
6.3 Results and Discussions ……………………….………………………..…... 130
6.4 Summary …………………………………………………………………….. 134
Chapter 7. Conclusions and Future Work
7.1 Conclusions ………………………………………………………………….. 139
7.2 Future work …………………………...…………………………………….. 140

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