( 您好!臺灣時間:2024/06/17 21:49
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::


研究生(外文):Jen-Ta Lin
論文名稱(外文):The Fabrication of Tantalum Nitride Metal Gate and Aluminium Nitride Gate Insulator for Thin-film Transistors
指導教授(外文):Shui-Jinn Wang
  • 被引用被引用:2
  • 點閱點閱:274
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0

本論文以氮化鉭及氮化鋁分別做為金屬閘極與閘極介電層材料,進行電容及薄膜電晶體製作與電特性量測分析。於物性分析方面,係利用X光繞射分析(XRD)、化學分析電子儀(XPS)與歐傑電子分析儀(AES)等儀器分析氮化鉭與氮化鋁薄膜之組成、結構及成分分布等。實驗結果顯示,所得氮與鉭之原子比例為4:1,射頻功率180 W所獲得的金屬鍵結較強,結構則以(1,1,0)的相位為主,具有較佳的熱穩定性,配合TEM與實驗C-V特性分析,所得氮化鋁之κ值約為10。

我們利用氮化鉭/氮化鋁/p-Si MOS結構進行C-V特性和漏電流之量測,分析探討氮化鉭與氮化鋁之接面特性。同時,我門亦進行以氮化鉭/氮化鋁為閘極結構TFT之ID-VD和ID-VG等特性量測,所得TFT之Ion/Ioff約達六個數量級;另由ID-VG萃取出臨界電壓約為0.77 V、次臨界擺幅為1.6 V/decade。由實驗結果顯示,以氮化鉭為金屬閘極搭配氮化鋁閘極介電層的結構,適用於N型薄膜電晶體,深具TFT-LCD方面之應用潛力◦
Thin Film Transistors (TFTs) have been widely used as a switch of LCD pixels. To increase driving current and enhance gate control capability, there is a tendency towards using high-κ materials as gate insulator in the near future. Conventional TFTs usually use aluminium (Al) or poly-silicon (p-Si) as the gate material. However, the poor thermal stability of aluminium gate electrode limits thermal processing of the device, while defects at the interface between traditional poly-Si gate and dielectric degrade device performances.

In this thesis, tantalum nitride (TaN) and Aluminium Nitride (AlN) were employed to serve as gate metal and gate insulator for future TFT-LCD technology, respectively. Both these two films were sputtering deposited and thermally annealed. The physical properties and compositions of TaN film were analyzed using XRD, XPS, and AES. Experimental results shows that TaN films with relatively stronger binding energy could be obtained from a RF sputtering with a power of 180 W and the main phase of the film is (110).

MIS capacitances with TaN/AlN/p-Si structure and n-TFTs based on the same MOS structure were fabricated and characterized. C-V and leakage current for the MIS capacitances as well as IDS-VDS and IDS-VGS characteristics of TFTs were also measured and analyzed. According to C-V curves and TEM images, the high-κ AlN films prepared in this work were with a κ-value of 10 and a minimum EOT around 7 nm has been realized. Typical values of Ion/Ioff ratio, threshold voltage, and subthreshold swing (SS) obtained form the fabricated TFTs with TaN(300 nm)/AlN(18 nm)/poly-Si(100 nm) MIS structure were 106, 0.77 V, and 1.6 V/decade, respectively.

Though further studies are still required, our preliminary experimental results suggest that the sputtering deposited TaN and AlN films might work well for future TFTs.
中文摘要 i
英文摘要 iii
致謝 v
目錄 vi
表目錄 viii
圖目錄 ix
1.1 大尺寸TFT-LCD顯示器歷史發展 1
1.2 低溫複晶矽特性與大尺寸TFT-LCD所需克服問題 2
1.3 研究動機 6
2.1 TFT薄膜電晶體介紹 7
2.2 複晶矽成長方式 19
2.3 High-κ材料於薄膜電晶體的特性改善 21
2.4 AlN的材料特性 22
2.5氮化鉭(TaN)的材料特性 24
3.1 氮化鉭搭配氮化鋁電容的製作流程 26
3.2 Si再結晶製程 30
3.3 薄膜電晶體製作流程 31
3.4 量測使用儀器 35
4.1 Si薄膜分析 36
4.2 AlN材料特性 37
4.3 TaN材料特性 39
5.1 TaN/ AlN/Silicon金氧半電容特性 48
5.2 TaN/ AlN/Silicon薄膜電晶體的基本電性量測 53
第六章 結論與未來研究
6.1 結論 58
6.2 未來研究之建議 59
參考文獻 60
[1] G. H. Heilmeier, L. A. Zanoni, L. A. Barton, “Dynamic scattering—
A new electrooptic effect in nematic liquid crystals,” Process
IEEE, Vol.56, pp.1162, 1968.

[2] T.P. Brody, J.A Asars, G.D. Dixon, ” A 6 × 6 inch 20 lines-per-inch
liquid-crystal display panel,” IEEE Transactions on Electron Devices,
Vol.20, pp.995, 1973.

[3] H. Kimura et al., SID Digest, pp.268, 2001.

[4] http://www.toppoly.com/

[5] Zhibin Xiong; Haitao Liu; Chunxiang Zhu; Sin, J.K.O,
“Characteristics of High-k Spacer Offset-Gated Polysilicon TFTs,”
IEEE Transactions on Electron Devices, Vol. 51, No. 8, August 2004.

[6] K. M. Chang, W. C. Yang, and C. P. Tsai, “Electrical characteristics
of low temperature polysilicon TFT with a novel TEOS/oxynitride stack
gate dielectric” , IEEE Electron Device Letters, vol. 24, no. 8, pp.
512–514, Aug. 2003.

[7] L. L. Kazmerski, “Polycrystalline and Amorphous Thin Films and
Devices,” Academic Press, 1980.

[8] T. A. Fjeldly, “Introduction to Device Modeling and Circuit
Simulation”, John Wiley & Sons, 1998.

[9] J.-P. Colinge, Silicon-on-insulator Technology : Materials To VLSI,
2nd ed., Kluwer Academic Publishers, 1997.

[10] 陳志強, LTPS低溫複晶矽顯示技術, 全華, 台北市, 2004

[11] T. Serikawa, S. Shirai, K. Nakagawa., S. Takaoka., K. Oto, K. Murase,
and .i Ishida, “Transport Properties in Band-Tails of High Mobility
Poly-Si TFTs,” Japanese Journal of Applied Physics, Vol.35, No.2B,
pp.937, 1996.

[12] I.-W Wu, T.-Y. Huang, W.B. Jackson, A.G. Lewis, A. Chiang, “
Passivation kinetics of two types of defects in polysilicon TFT by
plasma hydrogenation,” IEEE Electron Devices Letters, Vol.12, pp.
181, 1991.

[13]M. Wakagi et al., Electrochemical Soc. Proc., Vol.98-22, pp.237,

[14] Hsin-Li Chen, Ching-Yuan Wu, “A new I-V model considering the impact-
ionization effect initiated by the DIGBL current for the intrinsic n-
channel poly-Si TFTs,” IEEE Transactions on Electron Devices, Vol.46,
No.4, pp.722 , 1999.

[15] M. Valdinoci, L. Colalongo, G. Baccarani, G. Fortunato, A. Pecora,
I. Policicchio, “Floating body effects in polysilicon thin-film
transistors,” IEEE Transactions on Electron Devices, Vol.44, No.12,
pp. 2234, 1997.

[16] G. A. Armstrong, S. D. Brotherton, J. R. Ayres, “A comparison of the
kink effect in polysilicon thin film transistors and silicon on
insulator transistors,” Solid-State Electronics, Vol.39, No.9, pp.
1337, 1996.

[17] K. Kanzaki, et al., SID Digests, pp.242, 2001.

[18] R.E.I. Schropp, material research Society (MRS) Symposium
Proceedings, Vol.609, pp.A31.1, 2000.

[19] M. Matsui, Y. Shiraki, and E. Maruyama, “Low-temperature formation
of polycrystalline silicon films by molecular beam deposition,”
Japanese Journal of Applied Physics, Vol.53, No.2, pp.995 , 1982.

[20] T. Serikawa, F. Omata, “High-quality polycrystalline Si TFTs
fabricated on stainless-steel foils by using sputtered Si films,”
IEEE Transactions on Electron Devices, Vol.49, No.5, pp.820, 2002.

[21] H. Tokioka et al., Int’l. Workshop on AMLCD, pp.113, 2000.

[22]patent US54424244, US5561081, US6027960, US6291320

[23] E. Ruiz, santigo alvarez, P. Alemany, “Electronic Structure and
Properties of AlN”, Physical Review B, 497115-7123, 1994.

[24] P. K. Kuo, G. W. Auner, and Z. L. Wu, “Microstructure and
ThermalConductivity of Epitaxial AlN Thin Films”, Thin Solid Films,
223-227, 1994.

[25] 丁勝懋, 雷射工程導論, 中央圖書出版社, p307-313, 187-197, 271-295,

[26] Robert Stephen Sposili, “Crystalline Silicon Thin Film For Thin-Film
Transistor Applications Via Excimer Laser Irradiation”, Columbia
University, 2001.

[27] http://srdata.nist.gov/xps/

[28] B. F. Hung, K. C. Chiang, C. C. Huang, Albert Chin, “High-
Performance Poly-Silicon TFTs Incorporating LaAlO3 as the Gate
Dielectric,” IEEE Electron Devices Letters, vol. 26, no.6, pp. 384–
386, June 2005.

[29] C.W. Lin, M. Z. Yang, C. C. Yeh, L. J. Cheng, T. Y. Huang, H. C.
Cheng, H. C. Lin, T. S. Chao, and C. Y. Chang, “Effects of plasma
treatments, substrate types, and crystallization methods on
performance and reliability of low temperature polysilicon TFTs,” in
IEDM Technical Digests, pp. 305–308 , 1999.
註: 此連結為研究生畢業學校所提供,不一定有電子全文可供下載,若連結有誤,請點選上方之〝勘誤回報〞功能,我們會盡快修正,謝謝!
第一頁 上一頁 下一頁 最後一頁 top