臺灣博碩士論文加值系統

在本論文中，我們利用有機金屬氣相沉積的方式將新穎的氮砷化銦鎵多重量子井成長在砷化鎵基板上，做為光檢測器的光吸收層。由於在砷化鎵中摻雜適量的銦與氮可以使得氮砷化銦鎵晶格匹配於砷化鎵上，因此可以降低因為晶格不匹配所產生的缺陷，而磊晶品質佳的元件則可以得到比較低的暗電流和雜訊。
在本論文中的第一部份，我們討論的有無鋁砷化鎵覆蓋層之光檢測器的電特性，有覆蓋層的光檢器在能帶表現上，會有一個能帶的不連續性出現，如此一來將使得元件的暗電流與光電流皆有下降的趨勢，然而暗電流下降的趨勢比光電流更強烈，因此我們可以利用有覆蓋層的光檢測器來得到比較好的光暗電流比與光響應度比。
在本論文中的第二部份，我們比較氮砷化銦鎵與砷化銦鎵多重量子井的電特性，之後我們也比較三對與五對氮砷化銦鎵多重量子井電特性上的差異，最後我們可以發現具有覆蓋層的三對氮砷化銦鎵多重量子井元件電特性會在最佳，其光暗電流比為100000倍，同時其光響應比有200倍而理想因子為1.407。

In this thesis, we used the novel multiple quantum wells (MQWs) laser structure as our photodetector structure. The GaInNAs/GaAs MQWs was used as the absorption layer of photodetectors by metal organic vapor phase epitaxy (MOVPE). Lattice-mismatch between GaInNAs and GaAs can be reduced by incorporating proper amount of indium and nitrogen and thus the defects due to lattice mismatch can be reduced. Also, the photodetectors with excellent quality demonstrate lower dark current and noise.
In the first part, we discuss the electric characteristics of photodetectors with and without cladding layer”AlGaAs”. The cladding layer”AlGaAs” in our photodetector structure will form a double heterostructure, than the valence band discontinuity (∆Ev) and conduction band discontinuity (∆Ec) will occurs. Although the band discontinuities will suppress both the dark current and photocurrent, the decrease of photocurrent is less significantly compared to that of dark current. Consequently, the photodetectors with cladding layer will has the higher photo/dark current contrast ratio and responsivity rejection ratio.
In the next part, we compare the electric characteristics between the GaInNAs/GaAs and InGaAs/GaAs multiple quantum well laser structure. Also, we compare the difference between 3 and 5 periods of GaInNAs/GaAs multiple quantum well. The best choice is the 3 periods of GaInNAs/GaAs multiple quantum well laser structure with cladding layer”AlGaAs” which the photo/dark current contrast ratio and responsivity are 100000 and two orders at -2V and its ideal factor is 1.417.

Contents

Abstract I

Acknowledgement V

Contents VI

Figure Captions Ⅸ

Table Captions XI

Chapter 1 Introduction 1

1-1 Background 1

Chapter 2 Fabrication Systems and device process 10

2-1 Metal Organic Vapor Phase Epitaxy System 10

2-2 Photoluminescence (PL) Spectroscopy 12

2-3 HR-HRD characterization 14

2-4 Hall Measurement 15

2-5 Responsivity Measurement Systems and Other

Measurement Systems 17

2-6 Device Process 18

Chapter 3 Theoretic foundation of the photodetectors 30

3-1 Mechanism of the current transport for
junction photodiodes 30
3-2 Mechanisms of p-i-n photodiodes 32

3-3 Electrical Characteristics of MQW Mesa
p-i-n photodetectors 33

Chapter 4 GaInNAs/GaAs MQW P-I-N Photodetectors 45

4-1-1 Electric characteristics of GaInNAs/GaAs
multiple quantum well photodetectors 46
4-1-2 The Advantages of GaInNAs/GaAs MQW
p-i-n Photodetectors with Cladding Layer AlGaAs 48
4-1-3 Summary 53
4-2 The electric characteristics of photodetectors
with different MQW fabraiction 54
4-2-1 Dislocation issues 54
4-2-2 Characterization of HR-XRD and
photoluminescence (PL) Spectroscopy 57
4-2-3 Discussion of the electric characteristics 58
4-2-4 Junction breakdown voltage 61
4-2-5 Forward I- V Characteristics 62
4-2-6 The noise characteristics discussion 63
4-2-7 The detail discussion of sample 281 66
4-2-8 Summary 66

Chapter 5 Conclusions and Future Works

5-1 Conclusions 89
5-2 Future Works 91

References 92

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