臺灣博碩士論文加值系統

本論文焦點是低雜訊放大器和電感器。我們描述它們的基本特性參數而且最後在晶片上實現他們的設計。
第一部分是探討一個3.1 GHz到5 GHz的低雜訊放大器。本電路使用一個電阻式並並迴授來良好的寬頻匹配和相當平坦的增益。在這個電阻式並並迴授的放大器，輸入電阻被除以整個開迴路增益。模擬結果產生12 dB的放大而反射係數也都在-10 dB以下。得到的量測當果也和摸擬結果的趨勢相當接近。
第二部分是一個3.1 GHz到10.6 GHz低雜訊放大器設計，根據模擬結果顯示，此寬頻放大器有一個16 dB的增益且反射係皆小於-9 dB。
最後一個部份，一個遮蔽式的電感器被完成。

This thesis is focus on the LNA and inductor. We describe the fundamental performance parameter of them and realize their design on-chip finally.
The first part is “3.1 GHz to 5 GHz Ultra-wide band low-noise amplifier” using SiGe BiCMOS HBT technology. We use a resistive shunt-feedback-based amplifiers provide good wideband matching and flat gain. In the resistive shunt-feedback amplifier, input resistance is determined by the feedback resistance divided by the loop-gain of the feedback amplifier. The simulated results produced 12 dB gains in 3.1~5 frequency range and has good input and output matching below -10 dB. The trench of measured results is very approach with the simulated results.
The second part is about 0.18um CMOS 3.1 GHz to 10.6 GHz UWB LNA. The simulated results produced 16 dB gains in 3.1~10.6 frequency range and has good input and output matching below -9 dB.
At last, the inductors with pattern ground shield were fabricated with a TSMC 0.35 m RF SiGe Bi/CMOS technology on a p-type with thickness of 320 m.

Contents

Chapter 1 Introduction 1
1.1 Introduction 1
1.1.1 5GHz Frequency Bands 2
1.1.2 Motivations 3
1.2 Organization of the Thesis………………………………..…………………6
Chapter 2 Ultra Wide-Band (UWB) System………7
2.1 History of UWB 7
2.2 Circumstance of regulation and standardization 8
2.3 UWB Market 9
2.4 UWB Definition 11
2.5 Transmission Capacity 12
2.6 Technology Considerations 13
2.7 Conclusion 15
Chapter 3 LNA in the UWB System………………17
3.1 Induction…………………………………………………………………..17
3.2 Definition of Scattering Parameters in Amplifier…………………………20
3.3 Noise………………………………………………………………………25
3.3.1 Sources of Noise 25
3.3.2 Thermal Noise 26
3.3.3 Shot Noise 27
3.3.4 Flicker Noise 28
3.3.5 Noise in BJT and MOSFETs 29
3.3.6 Noise Factor 31
3.3.7 Two-Port Noise Figure for Source Admittance 34
3.3.8 Fris Noise Equation 36
3.4 Nonlinearity Analysis……………………………………………………. 38
3.4.1 Linearity and Nonlinearity (Harmonics) 38
3.4.2 Gain Compression 39
3.4.3 Intermodulation and Linearity 40
Chapter 4 UWB LNA Circuit Design……………..46
4.1 Introduction………………………………………………………………..46
4.2 Design of 3.1~5 GHz LNA 48
4.2.1 Narrow Band LNA Circuit 48
4.2.2 Circuit Description 50
4.2.3 The Simulated and Measured Results 53
4.2.4 Die Photograph of Circuit 57
4.2.5 Conclusion 58
4.3 Design of 3.1~10.6 GHz UWB LNA…………………………………….. 59
4.3.1 UWB Input Impedance Matching 59
4.3.2 Inductive Peaking technique for flat gain 61
4.3.3 The proposed UWB LNA 62
4.3.4 The Simulated and Measurement Results 63
4.3.5 Die Photograph of Circuit 66
4.3.6 Conclusion 66
Chapter 5 Study of Monolithic RF Inductors…….68
5.1 Induction 68
5.1.1 Monolithic RF Inductors 68
5.2 An Inductor with Similar Cantilever Beam 70
5.2.1 The Similar Cantilever Beam Inductor 71
5.2.2 The Measurement Results and Discussions 74
5.3 Study of Inductor with PGS Pattern 76
5.3.1 Inductor and Pattern Ground Shield Structures 77
5.3.2 Device Layout 80
5.3.3 Device Measurement 81
5.3.4 Measurement Results 82
5.4 Four Port Differential Transformers 83
5.5 Inductively-Coupled-Plasma (ICP) Technology 84
5.5 Conclusion 84
Chapter 6 Conclusion……………………………...87

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