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研究生:周庭暐
研究生(外文):Ting-Wei Chou
論文名稱:以電漿表面處理之新穎ReFET製程
論文名稱(外文):A novel fabrication of ReFET with plasma surface treatments
指導教授:張國明桂正楣
指導教授(外文):Kow-Ming ChangCheng-May Kwei
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子工程系所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:英文
論文頁數:54
中文關鍵詞:離子感測電晶體電漿處理
外文關鍵詞:REFETplasma treatmentcomanufacturingISFET
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Ion-sensitive field-effect-transistor(ISFET)最早是由P.Bergveld在1970年所提出的,其結構是將傳統的金氧半場效電晶體中的金屬閘極以待測溶液與參考電極所取代之。一旦待測溶液中的離子被感測層(sensing layer)表面的斷鍵所束縛住時,將會對下面的通道做出調變的效應,進而改變通道的電阻。如此一來,元件的電性將會隨著溶液的不同而產生變化,同時我們也可藉由電性的變化來判定溶液的性質。
而在應用上的問題則是來自於過多干擾,其中不乏光照射所產生的內部現象以及熱現象,於是相對應的元件則由此而生,而此元件設計的目的則在於抵銷光照效應以及熱效應,於是設計的原則則是與原ISFET具有一樣的光特性以及熱特性,但卻對pH的變化具有相對應低的感測能力,而此元件則稱之為Reference field-effect-transistor(ReFET),而在傳統的REFET設計,則是使用高分子有機化合物作為降低電場對通道的影響,而此在製程上的困難則是在於無法在同時間製作ISFET/REFET,而必須有特殊製程針對REFET¬而設計,而在此研究中,我們則是以修補斷鍵作為製程設計的主要想法,進而採用電漿處理的方式進行斷鍵的修補,以使其具有低pH的感測能力並且可同時進行ISFET/REFET的製程。
The ion-sensitive field effect transistor (ISFET) was first introduced by P.Bergveld in 1970. The metal gate is replaced by a reference electrode and the electrolyte . Once the ions in electrolyte are trapped by the dangling bond at the surface of sensing layer , which will induce the modulation of channel resistance . Therefore, the electric characteristics are changed by different kinds of electrolyte , and we can distinguish the properties of electrolyte .
There are lots of interferences in application with ISFET. Such as lightening effect and thermal effect, to eliminate these effects and lower sensitivity of pH the Reference field-effect-transistor (REFET) were produced. The traditional REFET manufacturing is to gel macromolecular compounds reducing the modulation of channel by electric field. Then we need a special manufacturing process of REFET, and can not comanufacture ISFET/REFET. In this study, we use plasma to recover the dangling bonds from sensing layer. Then the comanufacturing process of ISFET/REFET pair is realized.
Content
Abstract (in Chinese)…………………………………………………………………..i
Abstract (in English)…………………………………………………………………..ii
Acknowledgements (in Chinese)……………………………………………………..iii
Contents……………………………………………………………………………….iv
Figure captions…………………………………………………………………….….vi
Table captions………………………………………………………………………....ix

Chapter 1 Introduction
1.1 Motivation of this work…………...…………………………….……………1
1.2 Introduction to ISFET……………………………..………………….……...1
1.3 Application of ISFET……...…..………………………..……………………3
1.4 Plasma treatment and REFET..……………………………..………..………3
1.5 Thesis organization…………………………………………………………..4
1.6 References……………………………………………………………………4

Chapter 2 Theory & Principle
2.1 Operation theory of ISFET……………………………..................................8
2.2 The site-binding model and the sensitivity of ISFET………………….…...11
2.3 The Principles of REFET…………………………..………...……………..12
2.4 References…………………………………………………………………..17

Chapter 3 Experiment
3.1 Introduction……………..……………………………………………...…..18
3.2 Procedures of ISFET …...…………………………………………………..18
3.3 Experiment detail ……...…………………..……………………………….20
3.3.1 Gate region formation...…………………..……………………………20
3.3.2 Sensing layer deposition………………………………………..……...21
3.3.3 Plasma treatment……………………………………..………………...21
3.3.4 S/D contact area deposition…………………………………………….22
3.3.5 Device structure………………………………………………………...22
3.4 Measurement system…………………………………………………….….23
3.4.1 Components affect the measurement…………………………………..23
3.4.2 Measurement setup…………………………………………………….25
3.5 References…………………………………………………………………..26

Chapter 4 Results and Discussions
4.1 Introduction………………………………….……………………….….…27
4.2 Sensitivity characteristic of sensing materials………………..………...….27
4.2.1 Sensitivity characteristic of TiO2 membrane………………………….28
4.2.2 Sensitivity characteristic of ZrO2 membrane…………………………29
4.3 The coplanar ISFET/REFET sensor array system………………...………30
4.3 Conclusions…………………………………………………...……………30

Chapter 5 Future Work
5.1 Future work…………………………………………………………………32
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1.2 M. Zagnonia, A. Golfarelli, S. Callegari, A. Talamelli,V. Bonora, E. Sangiorgi, M. Tartagni, “A non-invasive capacitive sensor strip for aerodynamic pressure measurement” , Sensors and Actuators: A. Physical 123-124 complete(2005) p240-248

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1.5 J. Lyklema, “The electrical double layer on oxides” , Croatica Chem. Acta, 43 (1971) p.249
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1.7 R. E. G. van Hal, J. C. T. Eijkel, P. Bergveld, “A general model to describe the electrostatic potential at electrolyte oxide interfaces” , Colloid interface Sci. 68(1996) p.31-62

1.8 Alexey P. Soldatkin et al, “Analysis of the potato glycoalkaloids by using of
enzyme biosensor based on pH-ISFETs” , Talanta 66(2005) p.28-33

1.9 Henning Matthiesen, “In situ measurement of soil pH” , J. of Arch. Sci. 31(2004)p.1373-1381

1.10 Arshak Poghossian et al, “Chemical sensor as physical sensor: ISFET-based flow-velocity,flow-direction and diffusion-coefficient sensor” , Sensors and Actuators B 95(2003) p.384-390

1.11 P. Estrela et al, “Field effect detection of biomolecular interactions” , Electrochimica Acta 50 (2005) p.4995-5000

1.12 Z.M. Baccar, N. Jaffrezic-Renault , C. Martelet , H. Jaffrezic, G. Marest, A. Plantier
“Sodium microsensors based on ISFET/REFET prepared through an ionimplantationprocess fully compatible with a standard silicon technology”
Sensors and Actuators B 32 (1996) 101-105

1.13 Michal Chudy, Wojciech Wro´ blewski, Zbigniew Brzo´zka “Towards REFET”
Sensors and Actuators B 57 (1999) 47–50

1.14 Fukuzawa Y, “Machining characteristics of insulating ceramics by electrical discharge machine” INDUSTRIAL CERAMICS 21 (3): 187-189 SEP-DEC 2001

1.15 Jung-Chuan Chou, “Sensitivity and hysteresis effect in Al2O3 gate pH-ISFET”
Materials chemistry and physics 71(2001) 120-124
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2.3. D.E. Yates , S. Levine and T.W. Healy ,“ Site-binding model of the electrical double layer at the oxide/wafer interface ”, J. Chem. Soc. Faraday Trans. , 70 (1974) p.1807-1818

2.4. Fabien Gaboriaud , and Jean-Jacques Ehrhardt , “Effect of different crystal faces on the surface charge of colloidal goethite (α-FeOOH) particles: An experimental and modeling study” , Geochimica et Cosmochimica Acta, 67(2003) p. 967-983

2.5. J. Lyklema , “The electrical double layer on oxides” , Croatica Chem. Acta, 43 (1971) p249

2.6. R. E. G. van Hal, J. C. T. Eijkel, and P. Berveld , “A general model to describe the electrostatic potential at electrolyte oxide interfaces” , Adv. Colloid Interface Sci. 68 (1996) p.31-62

2.7. T. Hiemstra, J. C. M. de Wit, and W. H. van Riemsdijk, “Multisite proton adsorption modeling at the Solid/Solution interface of (Hydr) oxides: A New Approach II. Application to various important (Hydr)oxides”, J. Colloid and Interface Sci. , 133(1989) p. 105-116
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sensing membrane for ion-sensitive field-effect transistors” Sensors and Actautors B108(2005) 883-887
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3.7 P. Bergveld ,“ How electrical and chemical requirements for REFETs may coincide ", Sensors and Actuators 18 (1999) p.309-327
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