臺灣博碩士論文加值系統

本篇論文主要研究在射頻積體電路中被動元件與主動混頻器整合，被動元件包含電感，電壓器，耦合線，Marchand Balun的應用。除此之外，並且針對TSMC 0.35 um SiGe BiCMOS所提供的電感做一個特性的整理。
在雙頻升頻器中，利用了TSMC 0.35 um SiGe BiCOMS製程製作電感，並使用其製作雙頻電流合成器，同樣的概念也運用到TSMC 0.18 um COMS製程上，以及單邊頻譜升頻器。另外在正交相位降頻器方面，利用TSMC SiGe 0.35 um BICMOS，TSMC 0.18 um CMOS，以及TSMC 0.13 um CMOS製程製作，由於各製特性不同，在被動元件設計方面，根據製程不同的特性設計相異的被動元件架構。

In this thesis, we focus on the combine of the passive components and active mixer in radio frequency integrated circuit. The passive components includes inductors, transformers , couplers, and , Marchand balun . Besides , we arranged the inductors characteristic graphs provides by TSMC 0.35um SiGeBiCMOS technology process.
In dual-band up converter, we implement the self-designed inductors by using the TSMC 0.35 um CMOS technology process , and use it to design dual band current combiner. The same concept is also used to implement circuits by using TSMC 0.18um CMOS technology process, and integrated into single side band up converter. On the other hand, in quadrature phase down converter, we implement circuits by TSMC 0.35um SiGeBiCMOS technology process, TSMC 0.18um CMOS technology process, and TSMC 0.13um CMOS technology process. Because of the differences between each process, the architectures of passive components are different by which process is being used.

摘要（中文）………………………………………………………………………i
摘要（英文）………………………………………………………………………ii
致謝……………………………………………………………… iii
目錄 ………………………………………………………………iv
圖目錄 ……………………………………………………………vii
表目錄……………………………………………………………xv
第一章 導論……………………………………………………… 1
1.1 研究動機………………………………………………………2
1.2 論文組織…………………………………………………3
第三章 雙頻LC combiner之升頻器………………………………24
3.1 前言………………………………………………………25
3.2使用新型電流合成器的2.4G/5.7G雙頻混頻器…………25
3.2.1 LC 電流合成器(LC current combiner)………26
3.2.2雙頻電流合成器(dual-band current combiner )28
3.2.3 2.4G/5.7G雙頻升頻Gilbert混頻器………………30
3.3 2.4G/5.7G雙頻升頻微混頻器……………………………41
3.4使用trifilar 升頻器………………………………………49
3.5 2.4G/5.7G雙頻單邊頻譜升頻器…………………………56
3.5.1 正交相位產生器……………………………………57
3.5.2 I/Q通道升頻器設計………………………………62

第四章 被動元件的分析與設計……………………………………68
4.1 前言………………………………………………………69
4.2 耦合線……………………………………………………69
4.3 變壓器……………………………………………………72
4.3.1 變壓器阻抗轉換功能……………………………72
4.3.2 變壓器做Balun……………………………………73
4.3.3 Model……………………………………………77
4.3.4 變壓器測試鍵……………………………………79
4.4 Marchand Balun………………………………………83
4.5 使用被動元件之正交相位降頻器實作……………………84
4.5.1 SiGe BiCMOS 正交相位降頻器實作簡介……84
4.5.2 SiGe BiCMOS 正交相位降頻器電路圖………85
4.5.3 T18CMOS 正交相位降頻器實作簡介…………92
4.5.4 T18CMOS 正交相位降頻器電路圖……………92
4.5.5 T13CMOS 正交相位降頻器實作簡介…………99
4.5.6 T18CMOS 正交相位降頻器電路圖……………100
第五章 結論………………………………………………………108

參考文獻

第二章
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第四章
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