臺灣博碩士論文加值系統

無線通訊產業是目前最熱門一項產業，產品類型也從早期的代工到現在的自創品牌，以致 於需要大量的人才，此產業同時也被列入我國科技重點發展的項目。 在最近這幾年無線通訊非常普遍，由於受到無線通訊市場的快速成長影響，促使頻率與頻寬的要求與日遽增，故要求振盪頻率的準確度與穩定度成為最重要的課題，因此對於設計一個具有低成本、低功率消耗應用於無線通訊收發前端的晶片，引發廣範的討論，其中最主要的挑戰是為設計一個具有低相位雜訊、寬廣的可調頻率範圍、低功率消耗的電壓控振盪器。
在本論文中，將採用TSMC 0.18μm 1P6M的互補式金屬氧化物半導體場效電晶體(MOSFET)模型，設計一個頻率操作在5GHz的全積體化低相位雜訊電壓控制振盪器。為了要符合 IEEE 802.11a 5 GHz WLAN規格要求，整個電壓控制振盪器的電路使用全PMOS之振盪器的結構，另外加入負電導有效降低電感器的電阻性損耗以達到低相位雜訊。

In recent years, the wireless communication which has been very popular doubtless becomes one of the hottest industries. This technique is also listed in the important technology development of our country. Due to the requirements of high frequency, wideband, and explosion for the wireless communication, the accuracy and tability of oscillation frequency have become the most important issue. Therefore, the foregoing issue introduces a number of discussions about designing a RF front-end chip with low cost and low power consumption. Its major challenge lies in the design of fully integrated Voltage-Controlled Oscillators (VCO) with having low phase noise, wide tuning range, and low power consumption.
In this thesis, a 5GHz fully integrated low-phase-noise Voltage-Controlled Oscillator is designed in standard 0.18um CMOS technology. In order to follow the IEEE 802.11a 5GHz WLAN standard, the low-phase-noise VCO is achieved by applying only PMOS transistors
and by using an additional negative conductance to efficiently reduce the inductor resistive loss.

第一章 緒論 1
1.1 研究背景與動機 1
1.2 IEEE 802.11a 與 IEEE 802.11b 2
1.3 論文組織 4
第二章 雜訊與相位雜訊 5
2.1 雜訊與相位雜訊之簡介 5
2.2 熱雜訊 (Thermal Noise) 6
2.3 閃爍雜訊 (Flicker Noise) 7
2.4 相位雜訊的定義 9
2.5 振盪器的相位雜訊模型分析[9][10] 11
2.5.1 線性非時變模型(Linear-Time Invariant Model) 11
2.5.2 線性時變模形(Linear-Time Variant Model) 14
第三章 電感器 20
3.1 簡介 20
3.2 螺旋式電感(Spiral Inductor) 20
3.3 電感器品質因數之定義(Q-Factor) 24
3.4 螺旋式電感之等效電路模型與寄生效應 25
3.5 0.18微米之TSMC電感 27
第四章 變容器 28
4.1 簡介 28
4.2 變容器基本原理與種類 28
4.3 變容器的品質因數 33
第五章 電壓控制振盪器設計 34
5.1 簡介 34
5.2 電壓控制振盪器之原理 35
5.2.1 迴授觀點型式 35
5.2.2 反射觀點型式 37
5.2.3 振盪電路模型 39
5.3 LC-Tank 電壓控制振盪器 40
5.3.1 LC-Tank簡介 40
5.3.2 LC-Tank振盪器基本原理 41
5.3.3 LC-Tank的品質因數(Q-Factor) 44
5.4 模擬結果與佈局圖 45
第六章 結論 50
參考文獻 51

[1]B. Razavi, RF Microelectronics, New Jersey: Prentice-Hall, 1998.
[2]T. H. Lee, The Design of Radio Frequency Integrated Circuits,
Cambridge University Press, 2004.
[3]IEEE Std 802.11a/D7.0-1999, Part11: Wireless LAN Medium Access
Control (MAC) and Physical Layer (PHY) Specifications: High-speed
Physical Layer in the 5GHz Band.
[4]IEEE Standard 802.11b: Higher-Speed Physical Layer Extension in
the 2.4GHz Band.
[5]Ali Zamanian, Orthogonal Frequency Division Multiplex Overview,
Fluor Corp.
[6]Ali Hajimiri, The Design Of Low Noise Oscillators, Kluwer
Academic Publishers, USA,1999.
[7]Ali Hajimiri, Thomas H. Lee,“A General Theory of Phase Noise in
Electrical Oscillators,” IEEE J. Solid—State Circuit, vol. 33,
pp. 179-194, February 1998.
[8]于宗仁，應用在HDTV/ITV寬頻帶射頻調諧器及900-MHz/2.4-GHz無線通訊之頻率合成
器的設計，國立成功大學電機工程研究所碩士論文，民國八十六年。
[9]黃秋皇，應用於IEEE 802.11b/g無線區域網路之2.4GHz CMOS射頻接收機，國立成
功大學電機工程研究所碩士論文，民國九十二。
[10]Jacques Rutman, “Characterization of Phase and Frequency
Instabilities in Precision Frequency Source: Fifteen Years of
Progress,” Proceedings of the IEEE, vol. 66, No. 9, September
1978, pp. 1048-1075.
[11]D. B. Leeson,“A Simple Model of Feedback Oscillator Noise
Spectrum,” Proceedings of The IEEE, vol. 42, February 1966, pp.
329-330.
[12]Thomas H. Lee and Ali Hajimiri,“Oscillator Phase Noise: A
Tutorial,”IEEE Journal of Solid-State Circuits, vol.32, No. 3,
pp. 326 –336, March 2000.
[13]J. Craninckx and M. Steyaert, WIRELESS CMOS FREQUENCY
SYSTHESIZER DESIGN, Kluwer Academic Publishers, USA, 1998.
[14]Sunderarajan S. Mohan, Maria del Mar Hershenson, Stephen P.
Boyd, and Thomas H. Lee,“Simple Accurate Expressions for Planar
Spiral Inductances,”IEEE Journal of Solid-State Circuit, vol.
34, No. 10, pp. 1419-1424, October 1999.
[15]Jose M. Lopez-Villegas, Josep Samitier, Charles Cane, Pere
Losantos, and JoanBausells,“Improvement of the Quality Factor of
RF Integrated Inductors by Layout Optimization,”IEEE Transation
on Microwave Theory and Techniques, vol. 48, pp. 76-83, January
2000.
[16]Jan Craninckx, Michiel Steyaert,“Low Noise Voltage-Controlled
Oscillators Using Enhanced LC-Tanks,”IEEE Transactions on
Circuit and System-II: Analog and Digital Signal Processing,
vol. 42, No. 12, pp.794-804, December 1995.
[17]Roberto Aparicio, and Ali Hajemiri, “A Noise-Shifting
Differential Colpitts VCO,” IEEE J.Solid-State, vol 12, no. 12,
pp.1728-1736, December 2002.
[18]H. A. Wheeler,“Simple Inductance Formulas for Radio
Coils,”Proceedings of The Institute of Radio Engineers, vol. 16,
No. 10, October 1928, pp.1398–1400.
[19]Tser-Yu Lin, Ying-Zong Juabg, Hung-Yu Wang, and Chin-Fong
Chiu,“A Low Power 2.2-2.6GHz CMOS VCO with a Symmetrical Spiral
Inductor,”Proceedings of The 2003 International Symposium on
Circuits and Systems, 2003, ISCAS '03, vol. 1, May 2003, pp. I-
641 - I-644.
[20]袁傑，“高頻通信電路設計-被動網路”，全華書局，民國83年。
[21]徐建榆，“射頻積體電路之電感及相關被動元件之研製”，國立成功大學微電子工程
研究所碩士論文，民國九十一年六月。
[22]C. P. Yue and S. S. Wong,“On-Chip Spiral Inductors with
Patterned Ground Shields for Si-Based RF IC,”IEEE J.Solid-State
Circuits, vol. 33, pp.743–752, May1998.
[23]H. M. Greenhouse,“Design of Planar Rectangular Microelectronic
Inductors,”IEEE Transactions on Parts, Hybrids, and Packaging,
vol. PHP-10, No. 2, pp. 101-109, June 1974.
[24]Jan Craninckx and Michiel S. J. Steyaert,“A 1.8 GHz Low Phase
Noise CMOS VCO Using Optimized Hollow Spiral Indutors,”IEEE
Journal of Solid-State Circuits, vol. 32, Issue 5, pp. 736–744,
May 1997.
[25]J. N. Burghartz, M. Soyuer, and K. A. Jenkins,“Microwave
Inductors and Capacitors in Standard Multilevel Interconnect
Silicon Technology,”IEEE Transactions on Microwave Theory and
Techniques, vol. MTT-44, pp. 100-104, Jan. 1996.
[26]David Lovelace and Natalino Camilleri,“Silicon MMIC Inductor
Modeling for High Volume Low Cost Applications,”Microwave
Journal, pp. 60-69, August 1994.
[27]J. N. Burghartz and M. Soyuer, K. A. Jenkins,“Integrated RF and
Microwave Components in BiCMOS Technology,”IEEE Transactions on
Electron Devices, vol. 43, No. 9, pp. 1559-1570, September 1996.
[28]J. A. Tegopoulos and E. E. Kriezis, Eddy Currents in Linear
Conducting Media, New York, NY: Elsevier, 1985.
[29]H. A. Wheeler, Formulas For the Skin Effect , in Proc. I. R. E.
Vol. 30, pp. 412- 424, September 1942.
[30]Behzad Razavi,“A 1.8GHz CMOS Voltage-Controlled
Oscillator,”Proceedings of The Digest of Technical Papers of The
IEEE International Solid-State Circuits Conference, 44th ISSCC,
February 1997, pp.388–389.
[31]San-Mou Wu, Ron-Yi Liu, and Wei-Liang Chen,“A 5.8GHz High
Efficient, Low Power, Low Phase Noise CMOS VCO for IEEE
802.11a,”Proceedings of The 3rd IEEE International Workshop on
System on Chip for Real-Time Application, June 2003, pp. 94-97.
[32]Pietro Andreani, Sven Mattisson,“On the Use of MOS Varactors in
RF VCOs,”IEEE Journal of Solid-State Circuits, vol. 35, Issue:
6, pp.905-910, June 2000.
[33]Jishnu Bhattacharjee, Debanjan Mukherjee, Edward Gebara,
Sebastien Nuttinck, and Joy Laskar,“A 5.8GHz Fully Integrated
Low Power Low Phase Noise CMOS LC VCO for WLAN
Applications,”Proceedings of The IEEE Radio Frequency Integrated
Circuits (RFIC) Symposium 2002, June 2002, pp. 475-478.
[34]T. Soorapanth, C. P. Yue, D. R. Shaeffer, T. H. Lee, and S. S.
Wong, “Analysis and optimization of accumulation-mode varactor
for RF ICs,” in 1998 Symp. VLSI Circuit Dig. Tech. Papers, June
1998, pp. 32–33.
[35]R. Castello, P. Erratico, S. Manzini, and F. Svelto, “A 30%
tuning range varactor compatible with future scaled
technologies,” in 1998 Symp. VLSI Circuit Dig. Tech. Papers,
June 1998, pp. 34–35.
[36]Y. P. Tsividis, Operation and Modeling of the MOS Transistor,
New York, NY: McGraw-Hill, 1987.
[37]R. L. Bunch and S. Raman, “Large-Signal Analysis of MOS
Varactors in CMOS-Gm LC VCOs,” IEEE J. of Solid-State Circuits,
vol.38, No. 8, pp. 1325-1332, Aug. 2003.
[38]B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw-
Hill, 2002.
[39]Guillermo Gonozolez, Microwave transistor amplifiers analysis
and design, Prentice-Hall, 1994.
[40]S. Alechno, “Analysis Method Characterizes Microwave
Oscillators, Oscillator Analysis, Part 1,” Microwaves & RF,
pp.82-86, December 1997.
[41]R. Fujimoto,R. Tachibana, H. Yoshida, K. Kojima, and S.
Otaka,“4.6GHz CMOS voltage-controlled oscillator,”IEEE
Electronics Letters, vol. 38, pp. 632-633, June 2002.
[42]Yuan-Kai Chu and Huey-Ru Chuang,“A Fully Integrated 5.8GHz U-NII
Band 0.18-um CMOS VCO,”IEEE Microwave and Wireless Components
Letters, vol. 13, pp. 287-289, July 2003.
[43]Ali Hajimiri and Thomas H. Lee,“Design Issues in CMOS
Differential LC Oscillators,”IEEE J. Solid—State Circuit, vol.
34, pp. 717-724, May 1999.
[44]D. Ham and A. Hajimiri, “Concept and Methods in Optimization of
Integrated LC VCOs,” IEEE J. Solid-State Circuits, vol. 36, pp.
896-909, June 2001.
[45]A. Rofougaran, J. Rael, M. Rofougaran, and A. Abidi, “A 900MHz
CMOS LC-Oscillator with Quadrature Outputs,” Int. Solid-State
Circuits Conference Technical Digest, May 1996, pp. 392-393.
[46]C. M. Hung, B. A. Floyd, N. Park, and Kenneth K.O, “Fully
integrated 5.35-GHz CMOS VCOs and prescalers,” IEEE Trans.
Microwave Theory Tech, vol. 49, No.1, pp.17-22, Jan. 2000.
[47]J. Rogers and C. Plett, “A 5-GHz radio front-end with
automatically Q-tuned notch filter and VCO,” IEEE J. Solid-State
Circuits, vol. 9, no. 9, pp. 1547–1554, Sep. 2003.
[48]J.-O. Plouchart, H. Ainspan, M. Soyuer, and A. Ruehli, “A fully-
monolithic SiGe differential voltage-controlled oscillator for 5
GHz wireless applications”, in Procs.IEEE Radio Frequency
Integrated Circuits (RFIC) Symposium, June 2000, pp. 57-60.