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研究生:林士航
論文名稱:氮化鎵薄膜之光致螢光現象研究
論文名稱(外文):Study of photoluminescence in GaN thin film
指導教授:齊正中
學位類別:碩士
校院名稱:國立清華大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2005
畢業學年度:94
語文別:中文
論文頁數:58
中文關鍵詞:氮化鎵光致螢光光譜時間解析光譜三光子吸收致螢光熱活化能束縛激子
外文關鍵詞:GaNPLTRPL3-photon absorption induced PLactivation enernybound exciton
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我們用鈦:藍寶石鎖模雷射,波長為800nm,單一脈衝功率81.25KW經過啾頻脈衝放大(chirped-pulse amplification)後,波長為800nm,單一脈衝功率為4.62GW的雷射作為激發光,在氮化鎵半導體材料上激發出螢光來,藉此來觀察氮化鎵半導體材料其多光子吸收的現象,並由螢光的頻譜特性來了解其氮化鎵半導體的能帶結構及其非線性的效率。

我們所使用的n型GaN薄膜樣品於He-Cd雷射光(325nm)激發下,所對應出的復合發光在帶隙附近,進一步也進行10K到315K的變溫實驗;理論上對於TE和TM模的激發,氮化鎵材料內部電偶極躍遷有光場極化方向之相依性,所以應會有不同的電偶極躍遷,但是我們未觀察到此一現象,可能的原因為矽摻雜所導致能帶結構不明顯;為了比較,我們也對非刻意摻雜的GaN薄膜做同樣的量測,經相互比較後,討論GaN薄膜樣品可能的發光機制。最後以800nm的脈衝雷射來激發n-GaN薄膜樣品,所看到的光譜圖與線性激發所得到的略同,但其頻譜寬度顯然較窄;在脈衝光激發下,激發光強度對應發出螢光的強度,顯示其有著約三次方的相依關係,證明這螢光是來自於三光子吸收的非線性過程。
We excite GaN compound semiconductor by using the Ti: sapphire pulse laser as the pumping source so that we could observe the nonlinear absorption phenomenon, and hence the band structure of GaN. The wavelength of the Ti: sapphire pulse laser is 800 nm, unit peak power could be 81.25 KW. After chirped-pulse amplification, its wavelength is still 800nm, but unit peak power could reach 4.62 GW.

First we use He-Cd laser (325nm) to excite n-GaN sample with variable pump power and temperature. The photoluminescence we got correspond to the band-edge structure of GaN. The PL spectrum of GaN should has the dependence of polarization of E-filed in theory, but we couldn’t observe that phenomenon. It maybe due to Si-doped induced merge of band structure. For comparing, we also do experiment of unintentially-doped GaN, and with these data we could try to understand the mechanism of the carrier recombination in these two sample, both are dominated by donor-bound excitons. Alternatively, we use the pulse laser to excite GaN sample and thus have a PL spectrum looks like the linear excited one, but with a thinner spectrum width. Besides, using pulse-laser excitation, we could extract the power dependence (cubic) between the intensity of pumping laser and PL signal, and it shows that the photoluminescence is due to the 3-photon absorption of GaN.
中文摘要 Ⅰ
英文摘要 Ⅱ
致謝辭 Ⅲ
目錄

第一章 緒論 1

第二章 實驗原理 5

2.1光致發光原理 (Photoluminescence)
2.1-1能態躍遷機會的原理 (Theory of Transition Between Energy States) 5
2.1-2半導體之發光復合過程 (Radiative Recombination Processes) 7
2.2 非線性吸收:多光子吸收(Multi-photon Absorption)
2.2-1多光子吸收原理(Theory of Multiphoton Absorption) 8
2.3 氮化鎵材料常見的輻射躍遷(Popular Radiative Transitions of GaN) 15
2.4 半導體材料的能隙變化與活化能(Gap Variation and Activation Energy) 17

第三章 實驗樣品與實驗儀器架設 19

3.1 氮化鎵樣品的製備(The Preparing of GaN Samples) 19
3.2 線性激發光致螢光系統 (Linear-Excitation Photoluminescence) 20
3.3 非線性激發光致螢光系統 ( Nonlinear-Excitation Photoluminescence) 22
3.4 短脈衝雷射系統 (Pulse Laser System ) 24
3.5 短脈衝雷射檢測系統 (Single-Shot Autocorrelator System) 26

第四章 實驗數據做圖與分析 29

4.1 線性激發光致螢光 (Linear-Excitation Photoluminescence) 29
4.1-1 非刻意摻雜氮化鎵薄膜實驗結果與分析 29
4.1-2 矽摻雜氮化鎵薄膜實驗結果與分析 37
4.2非線性激發光致螢光 (Nonlinear-Excitation Photoluminescence) 46
4.2-1 矽摻雜氮化鎵薄膜實驗結果與分析 46

第五章 結論 54

各章參考文獻 55

第一章參考文獻
第二章參考文獻
第三章參考文獻
第四章參考文獻
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[1-11] Alexander M. Strelsov, K. D. Moll, Alexander L. Gaeta, P. Kung, D. Walker, M. Razeghi, “Pulse Autocorrelation Measurements Based on Two- and Three-Photon Conductivity in a GaN Photodiode,” Appl. Phys. Lett. 75 (1999), 3778.
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第二章之參考文獻

[2-1] 傅如彬,”藍光材料光激載子動態特性之研究”,清華大學物理系碩士論文
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[2-8]W. Gotz and N. M. Johnson, C. Chen, H. Liu, C. Kuo, and W. Imler, “Activation energies of Si donors in GaN,” Appl. Phys. Lett. 68 (2003), 3144.
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[2-10]Varshni. Y. P., Physica 34 (1967), 149.
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第三章參考文獻:

[3-1]S. Nakamura, Jpn. J. Appl. Phys. 30, L1705 (1991).

第四章參考文獻:

[4-1]P. Kung, A. Saxler, X. Zhang, D. Walker, T. C. Wang, I. Ferguson, and M. Razeghi, “High quality AIN and GaN epilayers grown on (00.1) sapphire, (100),
and (111) silicon substrates,” Appl. Phys. Lett. 66 (1995), 2958.
[4-2]M. Godlewski, J. P. Bergman, B. Monemar, U. Rossner and A. Barski, “Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si,” Appl. Phys. Lett. 69 (1996), 2089.
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[4-10]E. F. Schubert, I. D. Goepfert, and W. Grieshaber, J. M. Redwing, “Optical properties of Si-doped GaN,” Appl. Phys. Lett. 71 (1997), 921.
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[4-13] E. F. Schubert, I. D. Goepfert, and W. Grieshaber, J. M. Redwing, “Optical properties of Si-doped GaN,” Appl. Phys. Lett. 71 (1997), 921.
[4-14]W. Gotz, N. M. Johnson, C. Chen, H. Liu, C. Kuo, W.imler, “Activation
energies of Si donors in GaN,” Appl. Phys. Lett. 68 (1997), 3144.
[4-15]Chao-Kuei Lee, Fu-Jen Kao, Shing Chung Wang, Ci-Ling Pan, “ Simultaneous
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[4-16]Dosek Kim, I. H. Libon, C.Voelkmann, Y. R. Shen, V. Petrova-Koch, “Multi-photon Photoluminescence from GaN with tunable picosecond pulses,”
Physical Review B, 15(1997), R4907.
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