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研究生:楊尚賢
研究生(外文):Shang-Shian Yang
論文名稱:矽單晶基板上之異質磊晶成長:氮化鈦、氮化鋯、氧化鋅
論文名稱(外文):Heteroepitaxial growth on Si:TiN、ZrN、ZnO
指導教授:吳信田
指導教授(外文):Shinn-Tyan Wu
學位類別:博士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:108
中文關鍵詞:磊晶氮化鈦氮化鋯濺鍍氧化鋅
外文關鍵詞:epitaxyTiNZrNsputterZnO
相關次數:
  • 被引用被引用:22
  • 點閱點閱:757
  • 評分評分:
  • 下載下載:150
  • 收藏至我的研究室書目清單書目收藏:1
摘要
氮化鈦和氮化鋯所具有的物理特性而被廣泛運用在VLSI的元件上,有關氮化鈦和氮化鋯的披覆製程已廣為人知,但有關於磊晶成長方面的研究則相對少很多,本研究前半部分為研究氮化鈦和氮化鋯於矽基板上的磊晶成長機制,經過高溫前置沉積層的步驟,可將後續氮化鈦和氮化鋯薄膜於Si(100)和Si(111)兩種指向基板上的磊晶溫度降低至100℃。而氮化鋯、氮化鈦和矽基板間磊晶相對關係為:
(200)TiN��(400)Si;[011]TiN�鱍011]Si
(200)ZrN��(400)Si;[011]ZrN�鱍011]Si
研究後半部分為利用成長於Si(100)和Si(111)上的磊晶氮化鈦膜為基板,成長氧化鋅奈米線,在氧化鋅和氮化鈦的界面處會產生具尖晶石結構的α-Zn2TiO4中間反應層。
於TiN/Si(100)的基板上,可長成直立式的氧化鋅奈米線,其磊晶方位關係為:[1-210]ZnO�鱍0-11]TiN�鱍0-11]Si
且 (0001)ZnO��(111)TiN��(111)Si
於TiN/Si(111)基板,可得四重對稱式氧化鋅奈米線,其磊晶方位關係為::[1-210]ZnO�鱍0-11]TiN�鱍0-11]Si
且 (0001)ZnO R+γ��(111)TiN��(111)Si
其中R+γ表示ZnO(0001)面順時針轉動一個γ角。
目錄
第一章 序論……………………………………………………………1
第二章 文獻回顧……………………………………………………3
2-1 氮化鈦、氮化鋯……………………………………………3
2-1-1薄膜成長理論……………………………………………3
2-1-2薄膜成長模式……………………………………………5
2-1-3磊晶成長理論……………………………………………7
2-2氧化鋅奈米線………………………………………………10
2-2-1機械性質……………………………………………………11
2-2-2壓電性質……………………………………………………12
2-2-3電性…………………………………………………………12
2-2-4光學性……………………………………………………13
2-2-5磁摻雜……………………………………………………13
2-2-6化學感測…………………………………………………14
第三章 實驗設備與方法
3-1實驗設備……………………………………………………16
3-1-1真空直流磁控濺鍍系統…………………………………16
3-1-2 可控溫式真空爐管……………………………………18
3-2薄膜濺鍍流程…………………………………………………18
3-2-1試片清洗…………………………………………………18
3-2-2 TiN、ZrN磊晶膜鍍膜步驟………………………………19
3-2-3 ZnO奈米線製作步驟……………………………………21
3-3 試片分析……………………………………………………21
3-3-1 X光繞射(XRD)分析………………………………………21
3-3-2 穿透式電子顯微鏡的分析………………………………22
3-3-2 掃描式電子顯微鏡的分析………………………………23
第四章 結果與討論
4-1氮化鈦…………………………………………………………24
4-1-1不同厚度前置沉積影響…………………………………25
4-1-2改變前置沉積時氣氛………………………………………29
4-1-3製程加入前置沉積層………………………………………30
4-1-4高溫經前置沉積再至該溫………………………………35
4-1-5於不同溫度前置沉積再至500℃鍍膜……………………38
4-1-6氮化鈦/矽 磊晶方位之確定………………………………41
4-1-7電子顯微鏡分析…………………………………………42
4-2氮化鋯………………………………………………………57
4-2-1不同厚度前置沉積影響………………………………57
4-2-2改變前置沉積時氣氛………………………………………60
4-2-3製程加入前置沉積層………………………………………61
4-2-4高溫經前置沉積再至該溫…………………………………65
4-2-5於不同溫度前置沉積再至500℃鍍膜……………………68
4-2-6氮化鋯/矽 磊晶方位之確定………………………………71
4-2-7電子顯微鏡分析……………………………………………72
4-3氧化鋅…………………………………………………………85
4-3-1直立式氧化鋅奈米線的製備………………………………85
4-3-2四重對稱氧化鋅奈米線的製備……………………………91
第五章 結論…………………………………………………………99
參考文獻………………………………………………………………101
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