跳到主要內容

臺灣博碩士論文加值系統

(44.210.77.73) 您好!臺灣時間:2024/02/23 12:12
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:楊宗曄
研究生(外文):Tsung-Yeh Yang
論文名稱:利用鎳鉻合金催化劑合成自動對準單壁奈米碳管場效電晶體
論文名稱(外文):Ni-Cr Alloy to Enhance Single-walled Carbon Nanotube for Self-aligned Field-effect Transistor Application
指導教授:游萃蓉
指導教授(外文):Tri-Rung Yew
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:53
中文關鍵詞:奈米碳管場效電晶體合金催化劑
外文關鍵詞:carbon nanotubesfield-effect transistoralloycatalyst
相關次數:
  • 被引用被引用:0
  • 點閱點閱:156
  • 評分評分:
  • 下載下載:16
  • 收藏至我的研究室書目清單書目收藏:0
本研究乃利用鎳鉻合金作為成長單壁奈米碳管的催化劑,並合成自組裝單壁奈米碳管場效電晶體。實驗方法為先以電子槍真空蒸鍍系統依序沉積鈦、鉻、鎳、鈦薄膜於已有氧化物層之n+型矽基板(SiO2/n+-Si)上。接著以微影製程及濕式化學蝕刻產生圖形。之後將薄膜置於爐管中升溫至攝氏900度,使鎳擴散至鉻中形成鎳鉻合金並產生鎳奈米顆粒,再使用熱裂解化學氣相沉積法以乙炔作為碳源氣體,氬氣與氫氣的混合氣體為攜帶氣體,合成出均勻性極高的單壁奈米碳管。
以鎳鉻合金為催化劑合成單壁奈米碳管組成自組裝場效電晶體,合成出來的單壁奈米碳管在已定義的兩金屬線中間,兩金屬線分別做為場效電晶體之源極與汲極。n+型矽基板作為閘極,金屬線最小線寬為2微米。實驗結果顯示合成的單壁奈米碳管直徑為1.1至1.9奈米,平均直徑為1.4奈米,且擁有半導體性質,奈米碳管元件亦表現出場效電晶體特性。以鎳鉻合金為催化劑成長的單壁奈米碳管均勻性相較於只用鎳催化劑成長奈米碳管時較高,在本實驗中單壁碳管的均勻性愈高表示在合成出來的碳管中為單壁碳管的比例愈高。
In this work, self-assembled carbon nanotubes field effect transistors (CNT-FET) with semiconducting single-walled carbon nanotubes (SWNTs) as the channel were synthesized using Ni-Cr alloy as the catalysts. The Ti、Cr、Ni、Ti were deposited sequentially without breaking the vacuum to form Ti/Ni/Cr/Ti multi-layer stack on heavily doped n+ silicon wafer with 100 nm SiO2 layer on top by an E-gun system. After the deposition, thin films were patterned using lithography process and wet chemical etching. While the patterned multi-layer films were heated to the process temperature, of 900℃, Ni diffused into Cr and formed Ni-Cr alloy from Ti/Ni/Cr/Ti film at high temperature. Therefore Ni nano-particles were precipitated from Cr matrix. Single-walled carbon nanotubes were synthesized between two pre-defined Ti/Ni/Cr/Ti metal lines by means of thermal chemical vapor deposition (CVD) at 900℃ for 10 min. The C2H2 was used as reactant gas and the mixture of Ar and H2 was used as a carrier gas.
The SWNTs were synthesized between two pre-defined Ti/Ni/Cr/Ti metal lines, which were used as source and drain in CNT-FET and the heavily doped n+ silicon wafer was used as a back-gate electrode. The spacing between two metal lines in the CNT-FETs was 2-10 μm. The SWNTs synthesized between two Ti/Ni/Cr/Ti metal lines were verified by Raman spectrum and AFM height images. The distribution of CNT diameters was in a range from 1.1 to 1.9 nm, with an average of 1.4 nm. The SWNTs grown using Ni-Cr alloy catalysts exhibit more homogeneous CNTs than those synthesized using Ni catalysts. The semiconducting characteristics of the CNTs using the Ni-Cr alloy catalysts were demonstrated by the transistor characteristics of the CNT-FETs fabricated.
目錄 2
論文摘要 4
Abstract 5
誌謝 6
第一章 緒論 7
1-1 奈米科技 7
1-2 奈米碳管 9
1-3 奈米碳管場效電晶體 11
第二章 實驗原理及分析 13
2-1 奈米碳管的合成 13
2-2 合金催化劑 15
2-3 在矽基板上合成奈米碳管場效電晶體 16
2-4 分析及量測 20
2-4-1 掃描式電子顯微鏡 20
2-4-2 穿透式電子顯微鏡 21
2-4-3 原子力顯微鏡 22
2-4-4 拉曼光譜 23
2-4-5 電性測量 24
第三章 實驗步驟 25
3-1 試片製備 25
3-2 奈米碳管合成系統 28
3-3 實驗參數 29

第四章 實驗結果與討論 32
4-1 鎳鉻合金催化劑合成奈米碳管 32
4-1-1 合成環境溫度與製程時間效應 32
4-1-2 合成環境壓力效應 33
4-1-3 合成環境乙炔/氫氣流量比的影響 33
4-2鎳金屬催化劑合成奈米碳管 43
4-3 奈米碳管場效電晶體電性 48
第五章 結論 50
參考文獻 51
1 R. Kubo, J. Phys. Soc. 17, 975 (1962).
2 Ijima S., Nature 354, 56 (1991).
3 L. H. Chan, K. H. Hong, D. Q. Xiao, T. C. Lin, S. H. Lai, W. J. Hsieh, and H. C. Shih, Phys. Rev. B: Condensed Matter and Materials Physics 70, 125408/1 (2004)
4 L. H. Chan, K. H. Hong, D. Q. Xiao, W. J. Hsieh, S. H. Lai, H. C.Shih, T. C. Lin, F, S. Shieu, K. J. Chen, and H. C. Cheng, Appl. Phys. Lett. 82, 4334 (2003)
5 V. N. Popov, Materials Science and Engineering R 43, 61 (2004)
6 C. Journet, W. K. Master, P. Bernier, A. Loiseau, M. L. D. I. Chapelle, S. Lefrant, P. Deniard, R. Lee, J. E. Fischer, Nature 388, 756 (1997).
7 A. Thess, R. Lee, P. Nikdaev, H. Dai, P. Petit, J. Robert, C. Xu, Y. H. Lee, S. G. Kim, A. G. Rinzler, D. T. Colbert, G. E. Scuseria, D. Tomaken, J. E. Fisher, R. E. Smalley, Science 273, 483 (1996).
8 Z. F. Ren, Z. P. Huang, J. W. Xu, J. H. Wang, P. Bush, M. P. Siegal, P. N. Provencio, Science 282, 1105 (1998).
9 S. Fan, M. G. Chaplin, N. R. Franklin, T. W. Tombler, A. M. Cassell, H. Dia, Science 283, 512 (1991).
10 C. Bower, O. Zhou, W. Zhu, D. J. Werder, S. Jin, Appl. Phys. Lett. 77, 2767 (2000).
11 M. Su, B. Zheng, J. Liu, Chem. Phys. Lett. 322, 321 (2000).
12 C. J. Lee, D. W. Kim, T. J. Lee, Y. C. Choi, Y. S. Park, Y. H. Lee, W. B. Choi, N. S. Lee. K. S. Park, J. M. Kim, Chem. Phys. Lett. 312, 461 (1999).

13 K. Hernadi, A. Fonseca, J. B. Nagy, D. Bernaerts, J. Riga, A. Lucas, Synthetic Metals 77, 31 (1996).
14 L. C. Qin, D. Zhou, A. R. Krauss, D. M. Gruen, Appl. Phys. Lett. 72, 3437 (1998).
15 M. S. Dresselhaus, G. Dresshaus, P. C. Eklund, Science of fullerences & carbon nanotubes. San Diego: Academic Press (1996).
16 Z. Yao, C. L. Kane, C. Dekker, Phys. Rev. Lett. 84, 2491 (2000).
17 J. Hone, M. Whitney, A. Zettle, Synthetic Metals 103, 2489 (1999).
18 J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and Ph. Avouris, Phys. Rev. Lett. 89, 126801-1 (2002).
19 R. Saito, G. Dresselhaus, and M. S. Dresselhaus, PhysicalProperties of Carbon Nanotubes (Imperial College Press, London, 1998).
20 A. V. EletskiÏ, Usp. Fiz. Nauk 167, 945 (1997) [Phys.Usp.40, 899 (1997)].
21 E. Anglaret, J. L. Sauvajol, S. Rols, et al., in Electronic Properties of Novel Materials—Progress in Molecular Nanostructures, Ed. by H. Kuzmany, J. Fink, M. Mehring, and S. Roth (American Inst. of Physics, New York,1998), AIP Conf. Proc. 442, 116 (1998).
22 H. Katsuura, Y. Kumazawa, Y. Maniwa, et al., Synth. Metals 103 , 2555 (1999).
23 B. Liu, T. Wädberg, E. Olsson, et al., Chem. Phys. Lett. 30, 365 (2000).
24 Feng Ding, Arne Rosén, Kim Bolton, J. Chem. Phys. 121 (2004).
25 ASM Handbook Vol. 3, Alloy phase diagram, ASM International (1992).
26 B. Chen, and P. Wu, Carbon 43, 3172 (2005)
27 J. Kong, H. T. Soh, A. Cassell Calvin F. Quate, H. Dai, Nature 395, 878 (1998).
28 Young-Soo Han, Jin Koog Shin, and Sung Tae Kim, J. Appl. Phys. 90, 5731 (2001).
29 H. Hiura, T. W. Ebbesen, K. Tanigaki, H. Takahashi, Chem. Phys. Lett. 202, 509- (1993).
30 R. Saito, T. Takeya, T. Kimura, et al, Phys. Rev. B 57, 4145 (1998).
31 http://www.inxs-inc.com/cgi-bin/menu.cgi?a=view_prod&id=9686.
32 Michael Kohler, Etching in microsystem technology, Wiley-VCH (1999).
33 http://ustcnst.nthu.edu.tw/nodust_equip.php?act=E-GunSystem.
34 http://ustcnst.nthu.edu.tw/nodust_equip.php?act=DoubleSideAligner.
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top