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研究生:陳彥妤
研究生(外文):Yenyu Chen
論文名稱:新方法萃取65奈米P型金氧半電晶體的有效電性長度及源極汲極寄生電阻
論文名稱(外文):Extracting the Effective Channel Length and Series Resistance of 65nm pMOSFET
指導教授:龔正龔正引用關係
指導教授(外文):Jeng Gong
學位類別:碩士
校院名稱:國立清華大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:英文
論文頁數:68
中文關鍵詞:有效長度寄生電阻速度飽和擴散電流漏電流
外文關鍵詞:effective channel lengthseries resistancevelocity saturationdiffusion currentgate leakage current
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在奈米級MOSFET裡有效電性長度異於光罩長度或物理長度甚多,且是spice元件模型裡最重要的參數之一。本論文考慮奈米級MOSFET中,短通道效應、速度飽和效應、寄生電阻與有效長度效應、閘級漏電流效應、擴散電流效應、ballistic transport等影響,重新推倒IV方程式。
本論文改善Shift-and-Ratio Method,從實際量得的數據帶入新推導出更精確的IV方程式,萃取出有效長度與寄生電阻,並與Suciu-Jonston Method、De La Moneda Method、Shift-and-Ratio Method及Gate Leakage Method算出的結果做比較,發現傳統方法萃取出的數值不符合物理意義,唯有我們的新方法能得到合理的值。
本論文在最後簡單討論在P型MOSFET的源極汲極共參雜(co-implant)另一種參雜物的影響。運用新的方法算出有效電性長度及有效寄生電阻在不同製程的差異性,我們發現共參雜氟(fluorine)可以得到最陡峭的接面(abrupt shallow junction)。
A new, more accurate and more reasonable method of determining the MOSFETs effective channel length and source-drain series resistance is presented in this thesis. This method improves shit-and-ratio method and develops a more accurate calculation system. Comparing the extracted values from the Suciu-Johnston method, De La Moneda method, shift-and-ratio method, gate leakage method, and our new method, we prove that our method is the most accurate and reasonable one. Besides, we use this newly developed method to observe the co-implant source/drain effect in a 65nm pMOSFET.
1 Introduction 1
2 TheoryReview 3
2.1 General Review and Common Foundation . . . . . . . . . . . 3
2.2 Suciu-JohnstonMethod and De LaMonedaMethod . . . . . . 8
2.3 Shift-and-RatioMethod . . . . . . . . . . . . . . . . . . . . . 9
2.4 Gate CurrentMethod . . . . . . . . . . . . . . . . . . . . . . . 11
3 OurMethod 13
3.1 Velocity SaturationModel . . . . . . . . . . . . . . . . . . . . 13
3.2 Effective Saturated Velocity . . . . . . . . . . . . . . . . . . . 16
3.3 Effect of Diffusion Current . . . . . . . . . . . . . . . . . . . . 18
3.4 Derivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
4 Experiment 28
4.1 Simple Extraction Methodology of IDS . . . . . . . . . . . . . 28
4.2 Devices Characteristics . . . . . . . . . . . . . . . . . . . . . . 32
4.3 Determining ∆L and RSD with the DifferentMethods . . . . . 36
4.3.1 Suciu-Johnston Method and De La Moneda Method . . 36
4.3.2 Shift-and-RatioMethod . . . . . . . . . . . . . . . . . 40
4.3.3 Gate CurrentMethod . . . . . . . . . . . . . . . . . . 43
4.3.4 NewMethod . . . . . . . . . . . . . . . . . . . . . . . 46
4.4 Discussion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
5 Variations with the different Source/Drain Doping 54
5.1 Co-implant Effect . . . . . . . . . . . . . . . . . . . . . . . . . 54
5.2 Devices Characteristics . . . . . . . . . . . . . . . . . . . . . . 56
5.3 Experimental Results . . . . . . . . . . . . . . . . . . . . . . . 59
6 Conclusion 62
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