臺灣博碩士論文加值系統

本論文運用低壓化學氣相沈積(LPCVD)系統於620℃下成長多晶矽鍺於4吋矽基板上。由實驗結果發現，退火過程提升了多晶矽鍺薄膜(Poly-Si0.82Ge0.18)的特性。首先藉由SEM、AFM、SIMS、EDS和XRD進行退火前後之薄膜分析，且得到最佳條件為800℃退火30分鐘。其次，將此最佳退火條件研製Poly-Si0.82Ge0.18薄膜之( p-i-n)光感測器和太陽光電池。
於元件製作方面，吾人首先製作Si 基板/ SiO2 / p+- Poly-Si0.82Ge0.18/p-Poly-Si0.82Ge0.18/i-Poly-Si0.82Ge0.18(300~900nm)/n- Poly-Si0.82Ge0.18/ n+-poly Si0.82Ge0.18 / ITO 結構之p-i-n光感測器。經由實驗發現，本質層厚度提升了p-i-n光感測器特性，且吾人得到此p-i-n光感測器之最佳本質層厚度是600nm;其中所得之最佳特性為:於固定光照度3.0mW、逆向偏壓10V時，光電流為86μA、響應係數為0.0286A/W、量子效率為50.9%。
其次，吾人依此最佳p-i-n製程條件，製作不同結構的p-i-n太陽光電池。經由實驗發現，添加緩衝層(Buffer Si、P-型)的太陽光電池結構可提升了p-i-n太陽光電池的特性。經由短路電流(JSC)、開路電壓(VOC)、填充因子(FF)、轉換效率(η)的分析，吾人得到最佳結構是Si 基板 / n+-poly-Si / n-a-Si / i-poly-Si0.82Ge0.18 / p--a-Si / p+-a-Si / ITO，其轉換效率提升從1.349%至1.926%。

In this thesis, poly-Si1-xGex layers with x≦0.2 were epitaxially grown on a 4 inch (100) substrate by means of low pressure chemical vapor deposition (LPCVD) at 620℃ temperature. From our experiment results, we found that the annealed processes improved the characteristics of poly-Si1-xGex thin films. At first, the optimum annealing condition was obtained at 800℃ for 30 minutes from the analysis of SEM, AFM, SIMS, EDS, and XRD among different annealing conditions (0~900℃). Then, we use this optimal annealing condition of the poly-Si1-xGex thin films to fabricate p-i-n photodetectors and p-i-n solar cells.
In the preparation of devices, we firstly prepared p-i-n photodectectors of Si structure/ SiO2 / p+- Poly-Si0.82Ge0.18 / p-Poly-Si0.82Ge0.18/ i-Poly-Si0.82Ge0.18 (300~900nm) / n- Poly-Si0.82Ge0.18 / n+-poly Si0.82Ge0.18 / ITO. The experimental results showed that the intrinsic layer thicknesses improved the characteristics of p-i-n photodectectors, and we found that the optimum intrinsic layer thickness was 600nm. For the developed p-i-n photodetector under a 3.0mW-illuminated and 10V-reverse bias, the optimal values of photocurrent, responsivity, and quantum efficiency were 86(μA), 0.0286 (A/W), and 50.9(%), respectively.
Next, we fabricated p-i-n solar cells with different structures by the optimum p-i-n fabricating conditions. The experimental results showed that the structures of solar cells with buffer layer, i.e., (i-Si, p--Si) improved the characteristics of p-i-n solar cells. We found that the optimum p-i-n solar cell structure, i.e., Si substrate / n+-type poly-Si / n-type a-Si / i-poly-Si0.82Ge0.18 / p--type a-Si / p+-type a-Si / ITO from the analysis of JSC (mA/cm2), VOC (V), Fill factor(%), conversion efficiency(%). The conversion efficiency of the developed solar cell improves from 1.349% to 1.926%.

Chapter 1 Introduction...................................1
1-1. Overview............................................1
1-2. Outline.............................................4
Chapter 2 Deposition System and Experiment Equipments....6
2-1. Low Pressure Chemical Vapor Deposition (LPCVD)......6
2-2. Ion Implanter.......................................8
2-3. Magnetron Sputter..................................10
2-4. Thermal Evaporator.................................11
2-5. Anneal System......................................13
2-6. Exposure and Photolithography Equipment............14
Chapter 3 Characteristic Analysis of the Poly
Si0.82Ge0.18 films............................16
3-1. Introduction.......................................16
3-2. The Fabrication Process of Poly-Si0.82Ge0.18
Films............................................17
3-2-1 Cleaning..........................................17
3-2-2 Growth Process....................................18
3-3. Scanning Electron Microscope (SEM) Analysis........19
3-4. X-ray Diffraction (XRD) Analysis...................24
3-5. Energy Dispersive X-ray Spectrometer (EDS)
Analysis...........................................29
3-6. Atomic Force Microscopic (AFM) Analysis............30
3-7. Secondary-Ion Mass Spectrometry(SIMS) Analysis.....34
3-8. Conclusion.........................................35
Chapter 4 p-i-n Photodetector...........................36
4-1. Introduction.......................................36
4-2. Theoretical Analysis of p-i-n Photodetector........37
4-2-1 Theoretical Analysis..............................37
4-2-2 Dark current mechanisms...........................39
4-2-3 Quantum Efficiency................................39
4-2-4 Responsivity......................................40
4-3. The fabrication of p-i-n Photodiode................41
4-4. Results and Discussion.............................48
Chapter 5 Solar cell....................................73
5-1. Introduction.......................................73
5-2. Theoretical Analysis of solar sell device..........74
5-2-1 Principles of solar cell..........................74
5-2-2 The Types of Solar Cell...........................75
5-2-3 Fill Factor (FF)..................................76
5-2-4 Conversion Efficiency (η.........................77
5-3. The fabrication of solar cell......................80
5-4. Results and Discussion.............................88
Chapter 6 Conclusion and prospect.......................93
6-1. Conclusion.........................................93
6-2. Prospect...........................................94
Reference.................................................97

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