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研究生:吳昭緯
研究生(外文):Zhao-Wei Wu
論文名稱:氧化鋅透明電極金半金光檢測器之研究
論文名稱(外文):A study of ZnO Metal-Semiconducotor -Metal Photodetectors with transparent electrodes
指導教授:張忠誠張忠誠引用關係
指導教授(外文):Chun-Chen Chan
學位類別:碩士
校院名稱:國立臺灣海洋大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:148
中文關鍵詞:氧化鋅透明電極紫外光感測器磁控濺鍍法金半金光偵測器
外文關鍵詞:ZnOtransparent electrodesultraviolet detectorRF Sputtering methodMetal-Semiconducotor-Metal Photodetectors
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本實驗以磁控濺鍍法於矽基板上沉積氧化鋅薄膜,並針對經過不同溫度退火處理後的薄膜,利用XRD繞射儀,掃描式顯微鏡,微區元素能量分析儀,光激發螢光進行量測及分析,所得磊晶膜亦進行光檢測器之製作。
在元件製作方面,採用氧化鋅薄膜製作金半金光檢測器,並採用銦錫氧化物、銦氧化物、銦鋅氧化物和二氧化錫作為電極互相比較。而銦氧化物、銦鋅氧化物和二氧化錫使用射頻磁控濺鍍法沉積薄膜,並經過不同退火處理以改善薄膜之透明度及導電度。之後進行氧化鋅金半金光檢測器的光電特性量測,經過電性量測證明此光電元件適用於短波長紫外線感測器。
在本實驗中使用磁控濺鍍沉積系統沉積氧化鋅薄膜於於矽基板之上。這可以得到低成本之短波長紫外線光檢測器,使得這項技術未來在光電積體電路元件之應用極具潛力。
In this thesis, I used RF sputtering method to deposit the ZnO thin films, and annealed in different temperature. The ZnO thin films were analyzed by XRD, SEM, EDS, PL measurements. I used the ZnO thin films to be the MSM photodetector.
The ZnO thin films were used to be the MSM photodetector, and deposited the ITO, In2O3, IZO, and SnO2 as the electrodes to compare. I used RF sputtering method to deposit the In2O3, IZO, and SnO2 thin films. And I annealed the thin films in different condition to improve the transmittance and resistivities. Then I measured the photoelectric characteristic of ZnO MSM photodetector. Base on these results of photoelectric measurements, it is proposed that the optical device is suitable for short-wavelength UV photodetector.
In this thesis, I used sputtering method to deposit the ZnO thin films on silicon substrate. It is useful to develop low cost short wavelength UV photodetectors and has a great potential for the application of the short wavelength OEIC.
Chapter 1 Introduction……………………………………………1
1-1 Overview………………………….………………………1
1-2 Outline………………………………………...……..2

Chapter 2 Quality Analyses of the ZnO thin film…………........4
2-1 Introduction………………………………………..……...4
2-2 Deposited ZnO thin film…………………………….……5
2-3 Results and Discussion……………….…………………..6
2-3-1 Crystal structure analyses………………….……….6
2-3-2 Surface micro structure & EDS analyse…….……...7
2-3-3 Photo-Luminescence analyses………………….…....8
2-4 Conclusion………………………………………..…..9

Chapter 3 Quality Analyses of the In2O3、IZO and SnO2 thin
film………………………………………………………11
3-1 Introduction……………………………………………...11
3-2 Experiment………………………………………………12
3-3 Results and Discussion………………………………….13
3-3-1 Crystal structure analyses…………………………14
3-3-2 Surface micro structure………..................…15
3-3-3 Optical transmittance measurement………………16
3-3-4 Electrical measurement…………………………...17
3-4 Conclusions………………………………………...……19

Chapter 4 Theory and Fabrication of ZnO/Si MSMPD…..….22
4-1 Introduction.………………………………………..22
4-2 Theoretical Analysis………………………………….22
4-2-1 Metal-Semiconductor-Metal Junction…………….22
4-2-2 PhotoCurrent Mechanisms………………………..23
4-2-3 PhotoCurrent Responsivity……………….…...….25
4-2-4 Quantum Efficiency………………………………25
4-2-5 Response Speed…………………………………...26
4-2-6 Dark Current…………………………………...…28
4-3 Experiment………………………………………………29
4-4 Results and Discussion……………………………….30
4-5 Conclusion…………………………………………...….31

Chapter 5 Conclusions……………………………………………...33
Reference..…………………………………………………........35
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