臺灣博碩士論文加值系統

本論文主要利用偏光調變近場光學顯微鏡(PM-NSOM)與近場光學顯微鏡的光激螢光量測(NSOM-PL)研究氮化銦鎵磊晶層在結晶與光學性質上相互對應之關係，同時也探討不同高銦含量(In-rich)的氮化銦鎵磊晶層之結晶性質研究。
在PM-NSOM的結果中顯示出在高鎵含量(Ga-rich)的氮化銦鎵依結晶程度具有疇域(domain)的奈米結構，也在電子顯微鏡(SEM)的結果中觀察到相互對應的關係。這樣的結果中顯示出在高銦含量InGaN形成在V型缺陷的周圍區域，同時具有很好的結晶性與螢光發光復合效率。
在高銦含量的氮化銦鎵(鎵元素含量的變化由0%到31%)的研究中顯示氮化銦鎵的的表面粗糙度(Surface roughness)隨著鎵元素含量的增加而降低。另外平均(Average)結晶化程度隨著鎵元素含量的增加而降低，並與X光繞射(X-ray Diffraction)譜線半高寬隨著鎵元素含量的增加而增加相符，而在結晶程度均方根(RMS)的變動(fluctuation)中，首先會先隨著鎵元素含量的增加而降低，一直到鎵元素含量8%時為最低點，之後隨著鎵元素含量的增加而增加。我們觀察到均方根的結晶化程度跟光激螢光量測(Photoluminescence)的結果有著相同的趨勢，這樣的結果表示不同的鎵元素含量成長在相同溫度下，其氮化銦鎵磊晶層的結晶程度均方根(RMS)的變動(fluctuation)說明了與光激發光的螢光效率的對應關係。
本研究果顯示結合偏光調變近場光學顯微鏡(PM-NSOM)與近場光學顯微鏡的光激螢光(NSOM-PL)的量測方法，可以快速提供樣品表面形貌、結晶品質及光學性質等分析能力。

We have performed the polarization modulation near-field scanning optical microscopy (PM-NSOM) measurements to investigate the correlation between crystalline and optical properties of InGaN epilayers and crystalline quality of In-rich InGaN epilayers.
The PM-NSOM results show the nanoscale domain-like structures which exhibit good correspondence to the morphological images by SEM measurement. It is found the In-rich regions formed at the periphery of the hexagonal pits. These In-rich regions show good crystallinity and high recombination efficiency. We point out that the combination of PM-NSOM and NSOM-PL is a powerful tool for investigating the correspondence between the local morphology and the optical properties of the nanostructures.
The crystalline properties of In-rich InGaN films with Ga concentration varying from 0% to over 30% were investigated by PM-NSOM measurements. PM-NSOM measurements showed that the crystallinity of InGaN films were strongly dependence on the Ga concentration. The average crystallinity of InGaN film was found to decrease with the increase in Ga concentration of InGaN films. On the other hand, the RMS crystallinity exhibited a different dependence on the Ga concentration for the In-Rich InGaN films. The RMS crystallinity of InGaN films first decreased with the increasing Ga concentration, reached a minimum for the InGaN film with 8% Ga concentration, and then increased again with increasing Ga concentration. Surprisingly, the RMS crystallinity of InGaN films shows the same trend in the dependence of PL intensity on the Ga concentration in InGaN films. It was concluded that for the InGaN films with different Ga content grown at the same temperature, the RMS crystallinity of the epifilms accounts for PL emission efficiency of the epilayers.

Content
Abstract (Chinese version) …………………………………… I
Abstract (English version) …………………………………… II
致謝………..…………………………………………………… IV
Content..……...……………………………………………… V
List of Figure....…………………………………………… VI
List of Table ………………………………………………… XI
Chapter 1 Introduction……………………………………………… 1
Reference….………………………..…………………… 3
Chapter 2 Theoretical Background.…………….…… 7
2.1 Near-Field Optics……………………..…………….……… 7
2.1.1 History of Near-Field Optics…..……….…….……… 7
2.1.2 Physics of Near-Field Optics…..……….…….……… 9
2.2 Polarization-modulation near-field scanning optical microscopy…...………………………..……….……….... 11
2.2.1 Near-field scanning optical microscopy…….…….. 11
2.2.2 Polarization modulation theory…..………………….. 12
2.3 Photoluminescence……………….……………..…….. 16
Reference…...……………………………..………..………….. 18
Chapter 3 Review of some important material property of III-nitride based compound semiconductors……………..………..…….…….. 20
3.1 Crystal structure of Nitride…………..………...…….…….. 20
3.2 Defect in Nitrides……………………..………..………….. 21
3.3 Spontaneous and Piezoelectric polarization…..………..….. 23
3.4 Indium aggregation and phase separation……..…….…….. 26
Reference…...……………………………..………..………….. 30

Chapter 4 Experimental details………………..…..………….…….. 31
4.1 Sample Preparation…………………..…….…..………….. 31
4.2 Fiber fabrication…………………...…..………..……….. 32
4.3 Experiment Setup………………...…..………..…..…….. 35
Reference………………...…..…………………...………….. 37
Chapter 5 Correlation between crystallinity and optical properties of InGaN epilayers………………...…..………..……………….…….. 38
Reference………………...…..…………………...………….. 45
Chapter 6 Crystalline quality of In-rich InGaN epilayers studied by PM-NSOM ...……………...…..……………………...……………... 46
Reference………………...…..…………………………......... 57
Chapter 7 Conclusion…………...…….……..……………….………. 58

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